Click on picture for enlarged view Dr. Vladimir Umansky Dr. Hadas Shtrikman

The Molecular Beam Epitaxy (MBE) Laboratory is the heart of the submicron center. Its purpose is to prepare high purity semiconductor epitaxial layers (such as Gallium Arsenide and Aluminum Gallium Arsenide). Such grown layers form the basis of most semiconductor devices. The MBE system at the submicron center includes two growth chambers in addition to six other for introduction and pre-treatment of the substrates. One growth chamber is designed to produce high purity materials, while the other growth chamber is more versatile and is designed to produce a wider variety of materials and structures.