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A new and fascinating project recently launched in the Braun Center for Submicron Research concentrates on the growth of high-purity nano wires by the gold assisted vapor liquid solid (VLS) process. Since MBE is inherently the cleanest system for growth of epitaxial layers, as compared to other possible methods, it is the most promising prospect for producing high-purity materials such as nanowires. The goal is to establish an activity in growth of high-quality and high-purity nano wires of various III-V materials, such as InAs and GaAs, to support a whole range of studies in mesoscopic physics. We have already demonstrated the feasibility of GaAs and InAs nano wires growth by MBE as the first step toward the growth of purer and more complex structures. |