Program | nanowires-2013

Monday, November 11
Time	Session/Lecture info
18:00-21:00	Welcome reception
18:00-20:00	Registration and reception
20:00-20:45	Moty Heiblum Superconductor-Semiconductor Nanowire Junctions

Tuesday, November 12
Time	Session/Lecture info
09:00-09:10	Opening Remarks Prof. Daniel Zajfman, President, The Weizmann Institute of Science
09:00-09:10	Opening Remarks
09:10-11:30	Session I: Nanowires Overview Reshef Tenne
09:10-09:50	Lars Samuelson Nanowires are great fun and may contribute to our energy needs
09:50-10:30	Takashi Fukui, Hokkaido University, Japan Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications
10:30-11:00	Heike Riel, IBM Research, Switzerland Semiconducting nanowire heterostructures on silicon - from growth to devices
11:00-11:30	Coffee Break
11:30-13:20	Session II: Growth #1 Lucia Sorba
11:30-12:00	Tom Picraux, Los Alamos National Laboratory, USA Si/Ge Nanowires: Nanoscale Growth, Heterostructuring, and Energy Conversion
12:00-12:20	Uri Givan, Helmholtz-Zentrum Berlin, Germany Wafer Scale Growth of Isotopically Purified Polytype Silicon Nanowires and Polymorphs
12:20-12:50	Peter Kratzer, University of Duisburg-Essen, Germany Modeling GaAs nanowire growth: insights from ab-initio calculations
12:50-13:20	Jerry Tersoff, IBM, USA Kinetic regimes in III-V nanowire growth
13:20-14:30	Lunch Break
13:20-14:30
14:30-17:00	Session III:Quantum Phenomena, Excitations and Photonics Riccardo Rurali
14:30-15:00	Silvano De Franceschi, CEA, France Semiconductor nanowires as a versatile platform for quantum electronic devices
15:00-15:20	Andrey V. Kretinin, University of Manchester, UK An InAs nanowire-based Josephson junction operated as a self-actuated nanoelectromechanical resonator
15:20-15:40	Miquel Royo Valls, Universitat Jaume I, Spain Collective excitations of high-mobility electron gases in doped GaAs/AlxGa1-xAs multi-shell nanowires
15:40-16:00	Dan Rich, Ben-Gurion University, Israel Exciton-surface plasmon polariton coupling in GaAs/AlAs/GaAs core-shell nanowires covered with Au and Al films
16:00-16:30	Anna Fontcuberta i Morral, EPFL, Switzerland GaAs nanowire heterostructures: single photon emission and energy harvesting
16:30-17:00	Coffee Break
17:00-18:40	Session IV: Growth session #2 Michael Filler
17:00-17:30	Erik Bakkers, TU Eindhoven, The Netherlands Formation and electronic properties of InSb nanocrosses
17:30-17:50	Ezekiel A. Anyebe, lancaster University, UK Van der waals heteroepitaxy of high quality InAs nanowires on graphite for high-performance flexible devices
17:50-18:10	Faebian Bastiman, PDI, Germany The role of Ga-Ga and Ga-SiOx interactions in Ga-assisted GaAs nanowire growth on Si(111)
18:10-18:40	Vladimir Dubrovskii, St. Petersburg Academic University Russia III-V nanowires and nanoneedles on silicon
18:40-22:00	Poster Session + Dinner (beer and snacks)
18:40-22:00

Wednesday, November 13
Time	Session/Lecture info
09:00-11:10	Session V: Properties and applications Ray LaPierre
09:00-09:30	Lucia Sorba, Instituto Nanoscienze, Italy Growth of III-V nanowires: from fundamental physics to device applications
09:30-09:50	Eliezer Halpern, Tel-Aviv University, Israel Measuring the Density of States of Conduction Sub-band in InAs Nanowires at Room Temperature
09:50-10:10	Alf Mews , University of Hamburg, Germany Electro-optical properties of individual CdS nanowires
10:10-10:40	George Wang, Sandia National Laboratories, USA III-Nitride nanowires: New materials for light emission
10:40-11:10	Coffee Break Coffee Break
11:10-12:50	Session VI: Doping and Defects Naoki Fukata
11:10-11:40	Lincoln J. Lauhon, Northwestern University, USA Visualizing novel nanowire behaviors: doping and dissipation
11:40-12:00	Iddo. Amit, Tel Aviv University, Israel Spatially resolved doping profiles of p-i-n junctions in VLS-grown nanowires
12:00-12:20	Michael Filler , Georgia Institute of Technology, USA Enhanced LSPR absorption from dielectric anisotropy in Si nanowires
12:20-12:50	Anna Cavallini, University of Bologna, Italy Electronic levels of differently engineered arrays of Si nanowires
12:50-14:00	Lunch Break
12:50-14:00
14:00-16:00	Session VII: TEM Anna Fontcuberta i Morral
14:00-14:30	Dmitri Golberg, National Institute for Materials Science, Japan Nanowire mechanical properties as revealed by in-situ transmission electron microscopy
14:30-14:50	Daniel Jacobsson, Solid State Physics, Sweden Comparing Au-seeded and self-seeded nucleation of GaAs nanowires using in situ TEM
14:50-15:10	Lorenzo Rigutti, University of Rouen, France Correlated micro-photoluminescence spectroscopy, transmission electron microscopy and atom probe tomography on a single nano-object containing core-shell InGaN/GaN multi-quantum wells
15:10-15:30	Peter W. Voorhees, Northwestern University, USA Vapor-Liquid-Solid Growth: Twins and Droplet Stability
15:30-16:00	Coffee Break
16:00-17:40	Session VIII: Optical properties Lutz Geelhaar
16:00-16:30	Hannah J. Joyce, University of Oxford, UK Using terahertz conductivity spectroscopy to assess III-V nanowires for future optoelectronic devices
16:30-16:50	A. Dick van Dam, Eindhoven University of Technology, The Netherlands Directional light emission from arrays of semiconductor nanowires mapped by Fourier microscopy
16:50-17:10	Paulina Plochocka, LNCMI, CNRS, France Phonon coupling in a GaAs/AlAs core/multi-shell nanowire
17:10-17:40	Val Zwiller, TU Delft, The Netherlands Quantum optics with nanowires
19:00-22:00	Conference Dinner
19:00-22:00

Thursday, November 14
Time	Session/Lecture info
09:00-11:10	Session IX: Growth #3 Peter Voorhees
09:00-09:30	Jean-Christophe Harmand, CNRS, France III-V nanowire growth mechanisms investigated with markers
09:30-09:50	Torsten Rieger, Forschungszentrum Juelich GmbH, Germany Broken gap core-shell heterostructure nanowires
09:50-10:20	Ilaria Zardo, Eindhoven University of Technology, The Netherlands Crystal phase induced bandstructure modifications
10:20-10:40	Yu Kyoung Ryu , Instituto de Ciencia de Materiales de Madrid, CSIC, Spain Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies
10:40-11:10	Coffee Break Coffee Break
11:10-12:50	Session X: LED & PL Henning Riechert
11:10-11:40	Kristine Bertness , NIST, USA Single-nanowire GaN LEDs grown by molecular beam epitaxy
11:40-12:00	Grzegorz Grzela, FOM Institute AMOLF, The Netherlands Nanowire antenna emission
12:00-12:20	Marta De Luca, Sapienza Universita di Roma, Italy Determination by magneto-photoluminescence of exciton reduced mass and gyromagnetic factor of wurtzite InGaAs nanowires
12:20-12:50	Emmanouil Dimakis, Helmholtz-Zentrum Dresden-Rossendorf, Germany Light emitting diode based on (In,Ga)As/GaAs coaxial multi-shell nanowires monolithically integrated on Silicon
12:50-14:00	Lunch
12:50-14:00
14:00-16:10	Session XI: Optoelectronics devices Kris Bertness
14:00-14:30	Ray LaPierre, McMaster University, Canada Progress in III-V nanowire photovoltaics
14:30-14:50	Yannik Fontana, EPFL, Switzerland Occurrence and color of single-photon emitters nested in the shell of GaAs/AlGaAs nanowires
14:50-15:10	Jonas Laehnemann, Paul Drude Institute for Solid State Electronics, Germany Spatially resolving the emission along the axis of (In,Ga)N/GaN nanowire heterostructures using cathodoluminescence spectroscopy
15:10-15:40	Erik Garnett, FOM-AMOLF, The Netherlands Solar highways: core-shell nanowires for high-efficiency, low-cost solar cells
15:40-16:10	Coffee Break
16:10-17:50	Session XII: Surprise Session Ricardo Garcia
16:10-16:40	Fernando Patolski , Tel Aviv University, Israel 1D NanoMaterials: From Synthesis to Applications
16:40-17:00	Bertrand Raquet, CNRS, France Magneto-transport subbands spectroscopy in InAs nanowires
17:00-17:20	Enrique Montes, King Abdullah University of Science and Technology, Saudi Arabia Structural and tunneling properties in Si nanowires
17:20-17:50	Ernesto Joselevich, Weizmann Institute of Science, Israel Guided growth of horizontal nanowires: A new path to self-integrated nanosystems
18:00-20:00	Beers, snacks and jazz
18:00-20:00

Friday, November 15
Time	Session/Lecture info
08:00-16:00	Trip to Jerusalem
08:00-16:00

nanowires-2013 Program

Monday, November 11

Tuesday, November 12

Wednesday, November 13

Thursday, November 14

Friday, November 15

Registration

Abstract Submission

Organizers