BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//hacksw/handcal//NONSGML v1.0//EN
CALSCALE:GREGORIAN
BEGIN:VEVENT
DTSTART:20190228T080000Z
DTEND:20190228T090000Z
UID:e20986
DTSTAMP:20260517T060533Z
LOCATION:Perlman Chemical Sciences Building
DESCRIPTION:DLTS defects characterization of process and irradiation induced defects in 4H-SiC
SUMMARY:DLTS defects characterization of process and irradiation induced defects in 4H-SiC
END:VEVENT
END:VCALENDAR