BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//hacksw/handcal//NONSGML v1.0//EN
CALSCALE:GREGORIAN
BEGIN:VEVENT
DTSTART:20190228T080000Z
DTEND:20190228T090000Z
UID:e21028
DTSTAMP:20260419T185620Z
LOCATION:Perlman Chemical Sciences Building
DESCRIPTION:"DLTS defects characterization of process and irradiation induced defects in 4H-SiC”
SUMMARY:"DLTS defects characterization of process and irradiation induced defects in 4H-SiC”
END:VEVENT
END:VCALENDAR