Publications

Kagome metals AV3Sb5 (A=K, Rb, or Cs) exhibit intriguing charge density wave (CDW) instabilities, which interplay with superconductivity and band topology. However, despite firm observations, the atomistic origins of the CDW phases, as well as hidden instabilities, remain elusive. Here, we adopt our newly developed symmetry-adapted cluster expansion method to construct a first-principles-based effective Hamiltonian of CsV3Sb5, which not only reproduces the established inverse star of David (ISD) phase, but also predict a series of D3h-n states under mild tensile strains. With such atomistic Hamiltonians, the microscopic origins of different CDW states are revealed as the competition of the second-nearest neighbor V-V pairs versus the first-nearest neighbor V-V and V-Sb couplings. Interestingly, the effective Hamiltonians also reveal the existence of ionic Dzyaloshinskii-Moriya interaction in the high-symmetry phase of CsV3Sb5 and drives the formation of noncollinear CDW patterns. Our work thus not only deepens the understanding of the CDW formation in AV3Sb5, but also demonstrates that the effective Hamiltonian is a suitable approach for investigating CDW mechanisms, which can be extended to various CDW systems.

Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin–orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin–orbit polarons become tunable and eventually become itinerantly negative due to spin–orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic “1H”- and a Mott insulating “1T”-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

Bi₂SeO₅ has garnered considerable attention as a van der Waals (vdW) layered dielectric material featuring excellent electrical insulation properties. However, the related theoretical understanding of the dielectric properties of atomically thin films is still lacking. Here, we conducted the first-principles calculations to determine the dielectric performance of Bi₂SeO₅, showing a high average dielectric constant (ε) of >20 ranging from bulk to bilayer and monolayer. Besides, the conduction and valance band offsets between the monolayer Bi₂SeO₅ and bilayer Bi₂O₂Se were calculated to be greater than 1 eV, suggesting that monolayer Bi₂SeO₅ works well as the dielectric for atomically thin Bi₂O₂Se. Unlike h-BN or other two-dimensional (2D) vdW insulators, ε of Bi₂SeO₅ is dominated by its ionic component and remains nearly constant as the thickness decreases, demonstrating an ultralow equivalent oxide thickness (EOT) of 0.3 nm for its monolayer form. Moreover, the high ε of monolayer Bi₂SeO₅ survives under tensile or compressive strains up to 6%, which greatly facilitates its integration with various 2D semiconductors. Our work suggests that Bi₂SeO₅ ultrathin films can serve as excellent atomically flat encapsulation and dielectric layers for high-performance 2D electronic devices.[Figure not available: see fulltext.]

Quantum oscillations originating from the quantization of electron cyclotron orbits provide sensitive diagnostics of electron bands and interactions. We report on nanoscale imaging of the thermodynamic magnetization oscillations caused by the de Haas-van Alphen effect in moiré graphene. Scanning by means of superconducting quantum interference device (SQUID)-on-tip in Bernal bilayer graphene crystal axis-aligned to hexagonal boron nitride reveals large magnetization oscillations with amplitudes reaching 500 Bohr magneton per electron in weak magnetic fields, unexpectedly low frequencies, and high sensitivity to superlattice filling fraction. The oscillations allow us to reconstruct the complex band structure, revealing narrow moiré bands with multiple overlapping Fermi surfaces separated by unusually small momentum gaps. We identified sets of oscillations that violate the textbook Onsager Fermi surface sum rule, signaling formation of broad-band particle-hole superposition states induced by coherent magnetic breakdown.

The ability to selectively excite light with fixed handedness is crucial for circularly polarized light emission. It is commonly believed that the luminescent material chirality determines the emitted light handedness, regardless of the light emitting direction. In this paper, we propose an anomalous circular polarized light emission (ACPLE) whose handedness actually relies on the emission direction and current direction in electroluminescence. In a solid semiconductor, the ACPLE originates in the band structure topology characterized by the optical Berry curvature dipole. ACPLE exists in inversion-symmetry breaking materials including chiral materials. We exemplify the ACPLE by estimating the high circular polarization ratio in monolayer WS2. In addition, the ACPLE can be further generalized to magnetic semiconductors in which the optical Berry curvature plays a leading role instead. Our finding reveals intriguing consequences of band topology in light emission and promises optoelectric applications.

Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin polarized responses in these nonmagnetic compounds. Here, we perform ab initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV3Sb5 (A=Cs, Rb, K), CsTi3Bi5, and ScV6Sn6. We report large spin Hall conductivities, comparable with the Weyl semimetal TaAs. Additionally, in CsV3Sb5 the SHE is strongly renormalized by the charge density wave order. We can understand these results based on the topological properties of band structures, demonstrating that the SHE is dominated by the position and shape of the Dirac nodal lines in the kagome sublattice. Our results suggest kagome materials as a promising, tunable platform for future spintronics applications.

The interplay between chirality and topology nurtures many exotic electronic properties. For instance, topological chiral semimetals display multifold chiral fermions that manifest nontrivial topological charge and spin texture. They are an ideal playground for exploring chirality-driven exotic physical phenomena. In this work, we reveal a monopole-like orbital-momentum locking texture on the three-dimensional Fermi surfaces of topological chiral semimetals with B20 structures (e.g., RhSi and PdGa). This orbital texture enables a large orbital Hall effect (OHE) and a giant orbital magnetoelectric (OME) effect in the presence of current flow. Different enantiomers exhibit the same OHE which can be converted to the spin Hall effect by spin-orbit coupling in materials. In contrast, the OME effect is chirality-dependent and much larger than its spin counterpart. Our work reveals the crucial role of orbital texture for understanding OHE and OME effects in topological chiral semimetals and paves the path for applications in orbitronics, spintronics, and enantiomer recognition.

Strong singularities in the electronic density of states amplify correlation effects and play a key role in determining the ordering instabilities in various materials. Recently high order van Hove singularities (VHSs) with diverging power-law scaling have been classified in single-band electron models. We show that the 110 surface of Bismuth exhibits high order VHS with an usually high density of states divergence ∼ (E)^−0.7. Detailed mapping of the surface band structure using scanning tunneling microscopy and spectroscopy combined with first-principles calculations show that this singularity occurs in close proximity to Dirac bands located at the center of the surface Brillouin zone. The enhanced power-law divergence is shown to originate from the anisotropic flattening of the Dirac band just above the Dirac node. Such near-coexistence of massless Dirac electrons and ultra-massive saddle points enables to study the interplay of high order VHS and Dirac fermions.

Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS₂ crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.

Quantum oscillations can reveal Fermi surfaces and their topology in solids and provide a powerful tool for understanding transport and electronic properties. It is well established that the oscillation frequency maps the Fermi surface area by Onsager's relation. However, the topological phase accumulated along the quantum orbit remains difficult to estimate in calculations, because it includes multiple contributions from the Berry phase, orbital and spin moments, and also becomes gauge-sensitive for degenerate states. In this work, we develop a gauge-independent Wilson loop scheme to evaluate all topological phase contributions and apply it to CsTi3Bi5, an emerging kagome metal. We find that the spin-orbit coupling dramatically alters the topological phase compared to the spinless case. Especially, oscillation phases of representative quantum orbits demonstrate a strong 3D signature despite their cylinder-like Fermi surface geometry. Our work reveals the Fermi surface topology of CsTi3Bi5 and paves the way for the theoretical investigation of quantum oscillations in realistic materials.

The recently discovered kagome materials AV(3)Sb(5) (A = K, Rb, Cs) attract intense research interest in intertwined topology, superconductivity, and charge density waves (CDW). Although the in-plane 2 x 2 CDW is well studied, its out-of-plane structural correlation with the Fermi surface properties is less understood. In this work, we advance the theoretical description of quantum oscillations and investigate the Fermi surface properties in the three-dimensional CDW phase of CsV3Sb5. We derived Fermi-energy-resolved and layer-resolved quantum orbits that agree quantitatively with recent experiments in the fundamental frequency, cyclotron mass, and topology. We reveal a complex Dirac nodal network that would lead to a & pi; Berry phase of a quantum orbit in the spinless case. However, the phase shift of topological quantum orbits is contributed by the orbital moment and Zeeman effect besides the Berry phase in the presence of spin-orbital coupling (SOC). Therefore, we can observe topological quantum orbits with a & pi; phase shift in otherwise trivial orbits without SOC, contrary to common perception. Our work reveals the rich topological nature of kagome materials and paves a path to resolve different topological origins of quantum orbits.

Kagome materials are emerging platforms for studying charge and spin orders. In this Letter, we have revealed a rich lattice instability in a Z₂ kagome metal ScV₆Sn₆ by first-principles calculations. Beyond verifying the √3×√3×3 charge density wave (CDW) order observed by the recent experiment, we further identified three more possible CDW structures, i.e., √3×√3×2 CDW with P6/mmm symmetry, 2×2×2 CDW with Immm symmetry, and 2×2×2 CDW with P6/mmm symmetry. The former two are more energetically favored than the √3×√3×3 phase, while the third one is comparable in energy. These CDW distortions involve mainly out-of-plane motions of Sc and Sn atoms, while V atoms constituting the kagome net are almost unchanged. We attribute the lattice instability to the smallness of Sc atomic radius. In contrast, such instability disappears in its sister compounds RV₆Sn₆ (R is Y, or a rare-earth element), which exhibit quite similar electronic band structures to the Sc compound, because R has a larger atomic radius. Our work indicates that ScV₆Sn₆ might exhibit varied CDW phases in different experimental conditions and provides insights to explore rich charge orders in kagome materials.

Electron correlations often lead to emergent orders in quantum materials, and one example is the kagome lattice materials where topological states exist in the presence of strong correlations between electrons. This arises from the features of the electronic band structure that are associated with the kagome lattice geometry: flat bands induced by destructive interference of the electronic wavefunctions, topological Dirac crossings and a pair of van Hove singularities. Various correlated electronic phases have been discovered in kagome lattice materials, including magnetism, charge density waves, nematicity and superconductivity. Recently, a charge density wave was discovered in the magnetic kagome FeGe, providing a platform for understanding the interplay between charge order and magnetism in kagome materials. Here we observe all three electronic signatures of the kagome lattice in FeGe using angle-resolved photoemission spectroscopy. The presence of van Hove singularities near the Fermi level is driven by the underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the charge density wave as gaps near the Fermi level. Our observations point to the magnetic interaction-driven band modification resulting in the formation of the charge density wave and indicate an intertwined connection between the emergent magnetism and charge order in this moderately correlated kagome metal.

Electron hydrodynamics typically emerges in electron fluids with a high electron–electron collision rate. However, new experiments with thin flakes of WTe₂ have revealed that other momentum-conserving scattering processes can replace the role of the electron–electron interaction, thereby leading to a novel, so-called para-hydrodynamic regime. Here, we develop the kinetic theory for para-hydrodynamic transport. To this end, we consider a ballistic electron gas in a thin three-dimensional sheet where the momentum-relaxing (lmr) and momentum-conserving (lmc) mean free paths are decreased due to boundary scattering from a rough surface. The resulting effective mean free path of the in-plane components of the electronic flow is then expressed in terms of microscopic parameters of the sheet boundaries, predicting that a para-hydrodynamic regime with lmr ≫ lmc emerges generically in ultraclean three-dimensional materials. Using our approach, we recover the transport properties of WTe₂ in the para-hydrodynamic regime in good agreement with existing experiments.

During the past two decades, it has been established that a non-trivial electron wave-function topology generates an anomalous Hall effect (AHE), which shows itself as a Hall conductivity non-linear in magnetic field. Here, we report on an unprecedented case of field-linear AHE. In Mn₃Sn, a kagome magnet, the out-of-plane Hall response, which shows an abrupt jump, was discovered to be a case of AHE. We find now that the in-plane Hall response, which is perfectly linear in magnetic field, is set by the Berry curvature of the wavefunction. The amplitude of the Hall response and its concomitant Nernst signal exceed by far what is expected in the semiclassical picture. We argue that magnetic field induces out-of-plane spin canting and thereafter gives rise to nontrivial spin chirality on the kagome lattice. In band structure, we find that the spin chirality modifies the topology by gapping out Weyl nodal lines unknown before, accounting for the AHE observed. Our work reveals intriguing unification of real-space Berry phase from spin chirality and momentum-space Berry curvature in a kagome material.

Many experiments observed a metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in MnBi₂Te₄ thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission spectroscopy, while it can become a Chern insulator at field larger than 6 T (ferromagnetic phase, FM). Thus, the zero-field surface magnetism was once speculated to be different from the bulk AFM phase. However, recent magnetic force microscopy refutes this assumption by detecting persistent AFM order on the surface. In this Letter, we propose a mechanism related to surface defects that can rationalize these contradicting observations in different experiments. We find that co-antisites (exchanging Mn and Bi atoms in the surface van der Waals layer) can strongly suppress the magnetic gap down to several meV in the AFM phase without violating the magnetic order but preserve the magnetic gap in the FM phase. The different gap sizes between AFM and FM phases are caused by the exchange interaction cancellation or collaboration of the top two van der Waals layers manifested by defect-induced surface charge redistribution among the top two van der Waals layers. This theory can be validated by the position- and field-dependent gap in future surface spectroscopy measurements. Our work suggests suppressing related defects in samples to realize the quantum anomalous Hall insulator or axion insulator at zero fields.

Chiral circularly polarized (CP) light is central to many photonic technologies, from the optical communication of spin information to novel display and imaging technologies. As such, there has been significant effort in the development of chiral emissive materials that enable the emission of strongly dissymmetric CP light from organic light-emitting diodes (OLEDs). It has been widely accepted that the molecular chirality of the active layer determines the favoured light handedness of the CP emission in such devices, regardless of the light-emitting direction. Here we discover that, unconventionally, oppositely propagating CP light exhibits opposite handedness, and reversing the current flow in OLEDs also switches the handedness of the emitted CP light. This direction-dependent CP emission boosts the net polarization rate by orders of magnitude by resolving an established issue in CP-OLEDs, where the CP light reflected by the back electrode typically erodes the measured dissymmetry. Through detailed theoretical analysis, we assign this anomalous CP emission to a ubiquitous topological electronic property in chiral materials, namely orbital–momentum locking. Our work paves the way to design new chiroptoelectronic devices and probes the close connections between chiral materials, topological electrons and CP light in the quantum regime.

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic 1H- and a Mott-insulating 1T-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

The kagome lattice provides a fascinating playground to study geometrical frustration, topology and strong correlations. The newly discovered kagome metals AV3Sb5 (where A can refer to K, Rb or Cs) exhibit phenomena including topological band structure, symmetry-breaking charge-density waves and superconductivity. Nevertheless, the nature of the symmetry breaking in the charge-density wave phase is not yet clear, despite the fact that it is crucial in order to understand whether the superconductivity is unconventional. In this work, we perform scanning birefringence microscopy on all three members of this family and find that six-fold rotation symmetry is broken at the onset of the charge-density wave transition in all these compounds. We show that the three nematic domains are oriented at 120° to each other and propose that staggered charge-density wave orders with a relative π phase shift between layers is a possibility that can explain these observations. We also perform magneto-optical Kerr effect and circular dichroism measurements. The onset of both signals is at the transition temperature, indicating broken time-reversal symmetry and the existence of the long-sought loop currents in that phase.

Chirality-induced spin selectivity (CISS) refers to the fact that electrons get spin polarized after passing through chiral molecules in a nanoscale transport device or in photoemission experiments. In CISS, chiral molecules are commonly believed to be a spin filter through which one favored spin transmits and the opposite spin gets reflected; that is, transmitted and reflected electrons exhibit opposite spin polarization. In this work, we point out that such a spin filter scenario contradicts the principle that equilibrium spin current must vanish. Instead, we find that both transmitted and reflected electrons present the same type of spin polarization, which is actually ubiquitous for a two-terminal device. More accurately, chiral molecules play the role of a spin polarizer rather than a spin filter. The direction of spin polarization is determined by the molecule chirality and the electron incident direction. And the magnitude of spin polarization relies on local spin-orbit coupling in the device. Our work brings a deeper understanding on CISS and interprets recent experiments, for example, the CISS-driven anomalous Hall effect.

Diverse nonlinear optical responses of metallic band states have been characterized in terms of the Berry curvature dipole (BCD) or other multipole structures of Berry curvature. Here, we find that the second harmonic optical responses of insulators to sub-bandgap light are also delicately associated with the interband BCD. We performed real-time time-dependent density functional theory calculations and theoretically analyzed the second harmonic generation susceptibility tensors. The two-band term of the second-order susceptibility is precisely proportional to the interband BCD, which is particularly significant for low-symmetric systems with a small bandgap. We show that higher-order responses to nonperturbative strong fields can be associated with higher poles of Berry curvature. We suggest that the consequences of symmetry lowering can be detected by nonlinear optical responses through adjustments of the dipole or other multipole structures of the Berry curvature texture.

The electronic instabilities in CsV₃Sb₅ are believed to originate from the V 3d-electrons on the kagome plane, however the role of Sb 5p-electrons for 3-dimensional orders is largely unexplored. Here, using resonant tender X-ray scattering and high-pressure X-ray scattering, we report a rare realization of conjoined charge density waves (CDWs) in CsV₃Sb₅, where a 2 × 2 × 1 CDW in the kagome sublattice and a Sb 5p-electron assisted 2 × 2 × 2 CDW coexist. At ambient pressure, we discover a resonant enhancement on Sb L₁-edge (2s→5p) at the 2 × 2 × 2 CDW wavevectors. The resonance, however, is absent at the 2 × 2 × 1 CDW wavevectors. Applying hydrostatic pressure, CDW transition temperatures are separated, where the 2 × 2 × 2 CDW emerges 4 K above the 2 × 2 × 1 CDW at 1 GPa. These observations demonstrate that symmetry-breaking phases in CsV₃Sb₅ go beyond the minimal framework of kagome electronic bands near van Hove filling.

Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking, and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS₂ has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example, in electronic structures and the optical properties, are yet to be explored. Here, we report the spectroscopic visualization of an emergent chiral electronic band structure in the CDW phase, characterized by windmill-shaped Fermi surfaces. We uncover a remarkable chirality-dependent circularly polarized Raman response due to the salient in-plane chiral symmetry of CDW, although the ordinary circular dichroism vanishes. Chiral Fermi surfaces and anomalous Raman responses coincide with the CDW transition, proving their lattice origin. Our Letter paves a path to manipulate the chiral electronic and optical properties in two-dimensional materials and explore applications in polarization optics and spintronics.

We present a ferromagnetic resonance (FMR) method that we term the "Ferris" FMR. It is wideband, has at least an order of magnitude higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It is based on large-amplitude modulation of the externally applied magnetic field that effectively magnifies signatures of the spin-transfer torque making its measurement possible even at the wafer level. Using the Ferris FMR, we report the generation of spin currents from the orbital Hall effect taking place in pure Cu and Al. To this end, we use the spin-orbit coupling of a thin Pt layer introduced at the interface that converts the orbital current to a measurable spin current. While Cu reveals a large effective spin Hall angle exceeding that of Pt, Al possesses an orbital Hall effect of opposite polarity in agreement with the theoretical predictions. Our results demonstrate additional spin-and orbit functionality for two important metals in the semiconductor industry beyond their primary use as interconnects with all the advantages in power, scaling, and cost.

Boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites are proposed, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital shift-induced boundary obstructed topological insulators, eight material candidates are predicted, all of which are overlooked in the present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (e.g., more than 1 eV in TlGaTe2) at related boundary, which are ready for experimental detection. Additionally, these materials are also fragile topological insulators with hourglass-like surface states.

Charge carriers in magic-angle graphene come in eight flavours described by a combination of their spin, valley and sublattice polarizations. When inversion and time-reversal symmetries are broken, this ‘flavour’ degeneracy can be lifted, and their corresponding bands can be sequentially filled. Due to their non-trivial band topology and Berry curvature, each band is classified by a topological Chern number C, leading to quantum anomalous Hall and Chern insulator states. Using a scanning superconducting quantum interference device on a tip, we image the nanoscale equilibrium orbital magnetism induced by the Berry curvature, the polarity of which is governed by C, and detect its two constituent components associated with the drift and self-rotation of the electronic wavepackets. At integer filling v = 1, we observe a zero-field Chern insulator, which—rather than being described by a global topologically invariant C—forms a mosaic of microscopic patches of C = −1, 0 or 1. On further filling, we find a first-order phase transition due to the recondensation of electrons from valley K to K′, leading to irreversible flips of the local Chern number and magnetization, as well as to the formation of valley domain walls, giving rise to hysteretic anomalous Hall resistance.

Vortices are the hallmarks of hydrodynamic flow. Strongly interacting electrons in ultrapure conductors can display signatures of hydrodynamic behaviour, including negative non-local resistance1,2,3,4, higher-than-ballistic conduction5,6,7, Poiseuille flow in narrow channels8,9,10 and violation of the Wiedemann–Franz law11. Here we provide a visualization of whirlpools in an electron fluid. By using a nanoscale scanning superconducting quantum interference device on a tip12, we image the current distribution in a circular chamber connected through a small aperture to a current-carrying strip in the high-purity type II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that vortices are present for only small apertures, whereas the flow is laminar (non-vortical) for larger apertures. Near the vortical-to-laminar transition, we observe the single vortex in the chamber splitting into two vortices; this behaviour is expected only in the hydrodynamic regime and is not anticipated for ballistic transport. These findings suggest a new mechanism of hydrodynamic flow in thin pure crystals such that the spatial diffusion of electron momenta is enabled by small-angle scattering at the surfaces instead of the routinely invoked electron–electron scattering, which becomes extremely weak at low temperatures. This surface-induced para-hydrodynamics, which mimics many aspects of conventional hydrodynamics including vortices, opens new possibilities for exploring and using electron fluidics in high-mobility electron systems.

Intense light–matter interactions have revolutionized our ability to probe and manipulate quantum systems at sub-femtosecond timescales 1 , opening routes to the all-optical control of electronic currents in solids at petahertz rates 2–7 . Such control typically requires electric-field amplitudes in the range of almost volts per angstrom, when the voltage drop across a lattice site becomes comparable to the characteristic bandgap energies. In this regime, intense light–matter interaction induces notable modifications to the electronic and optical properties 8–10 , dramatically modifying the crystal band structure. Yet, identifying and characterizing such modifications remain an outstanding problem. As the oscillating electric field changes within the driving field’s cycle, does the band structure follow and how can it be defined? Here we address this fundamental question, proposing all-optical spectroscopy to probe the laser-induced closing of the bandgap between adjacent conduction bands. Our work reveals the link between nonlinear light–matter interactions in strongly driven crystals and the sub-cycle modifications in their effective band structure.

Magnetic topological insulators (MnBi₂Te₄)(Bi₂Te₃)_n (n=0,1,2,3) are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the Bi₂Te₃ layer introduces versatility to engineer electronic and magnetic properties. However, whether surface states on the Bi₂Te₃ terminated facet are gapless or gapped is debated, and its consequences in thin-film properties are rarely discussed. In this work, we find that the Bi₂Te₃ terminated facets are gapless for n≥1 compounds by calculations. Although the surface Bi₂Te₃ (one layer or more) and underlying MnBi₂Te₄ layers hybridize and give rise to a gap, such a hybridization gap may overlap with bulk valence bands, leading to a gapless surface after all. Such a metallic surface poses a fundamental challenge to realize QAHE or AI, which requires an insulating gap in thin films with at least one Bi₂Te₃ surface. In theory, the insulating phase can still be realized in a film if both surfaces are MnBi₂Te₄ layers. Otherwise, it requires that the film thickness be less than 10-20nm to push down bulk valence bands via the size effect. Our work paves the way to understand surface states and design bulk-insulating quantum devices in magnetic topological materials.

Kagome metal TbMn6Sn6 was recently discovered to be a ferrimagnetic topological Dirac material by scanning tunneling microscopy/spectroscopy measurements. Here, we report the observation of large anomalous Nernst effect and anomalous thermal Hall effect in this compound. The anomalous transverse transport is consistent with the Berry curvature contribution from the massive Dirac gaps in the 3D momentum space as demonstrated by our first-principles calculations. Furthermore, the transverse thermoelectric transport exhibits asymmetry with respect to the applied magnetic field, i.e., an exchange-bias behavior. Together, these features place TbMn6Sn6 as a promising system for the outstanding thermoelectric performance based on anomalous Nernst effect.

We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). Angle-resolved photoemission directly reveals the Dirac-semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd3As2/permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface. We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin-transport and spin-charge conversion experiments in Cd3As2 devices that seek to invoke the role of topological Dirac and Fermi arc states.

The classic magnetic induction effect is usually considered in electric circuits or conductor coils. In this paper, we propose quantum induction effects induced by the Berry curvature in homogenous solids. Two different types of quantum inductions are identified in the higher order of a magnetic field. They are closely related to the magnetic-field-induced anomalous velocity proportional to the Berry curvature so that both quantum inductions become significantly enhanced near the Weyl points. Further, we propose an ac-magnetic-field measurement to detect quantum induction effects and distinguish them from classical induction.

The classic magnetic induction effect is usually considered in electric circuits or conductor coils. In this work, we propose quantum induction effects induced by the Berry curvature in homogenous solids. Two different types of quantum inductions are identified in the higher order of a magnetic field. They are closely related to the magnetic-field-induced anomalous velocityproportional to the Berry curvature so that both quantum inductions become significantly enhanced near Weyl points. Further, we propose an ac-magnetic-field measurement to detect quantum induction effects and distinguish them from classical induction.

Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi 2 Te 4, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi 2 Te 4 via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi 2 Te 4, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi 2 n Te 3 n + 1.

The noncentrosymmetric transition-metal monopnictides NbP, TaP, NbAs, and TaAs are a family of Weyl semimetals in which pairs of protected linear crossings of spin-resolved bands occur. These so-called Weyl nodes are characterized by integer topological charges of opposite sign associated with singular points of Berry curvature in momentum space. In such a system, anomalous magnetoelectric responses are predicted, which should only occur if the crossing points are close to the Fermi level and enclosed by Fermi surface pockets penetrated by an integer flux of Berry curvature, dubbed Weyl pockets. TaAs is shown to possess Weyl pockets, whereas TaP and NbP have trivial pockets enclosing zero net flux of Berry curvature. Herein, via measurements of the magnetic torque, resistivity, and magnetization, a comprehensive quantum-oscillation study of NbAs is presented, the last member of this family where the precise shape and nature of the Fermi surface pockets is still unknown. Seven distinct frequency branches, three of which have not been observed before, are detected. A comparison with density functional theory calculations suggests that the two largest pockets are topologically trivial, whereas the low frequencies might stem from tiny Weyl pockets. The enclosed Weyl nodes are within a few meV of the Fermi energy.

We report the discovery of a new three-dimensional (3D) topological Dirac semimetal (TDS) material KZnBi, coexisting with a naturally formed superconducting state on the surface under ambient pressure. Using photoemission spectroscopy together with first-principles calculations, a 3D Dirac state with linear band dispersion is identified. The characteristic features of massless Dirac fermions are also confirmed by magnetotransport measurements, exhibiting an extremely small cyclotron mass of m∗=0.012 m0 and a high Fermi velocity of vF=1.04×106  m/s. Iterestingly, superconductivity occurs below 0.85 K on the (001) surface, while the bulk remains nonsuperconducting. The captured linear temperature dependence of the upper critical field suggests the possible non-s-wave character of this surface superconductivity. Our discovery serves a distinctive platform to study the interplay between 3D TDS and the superconductivity.

Research on the anomalous Hall effect (AHE) has been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in which the extrinsic process related to scattering effects and intrinsic contribution connected with Berry curvature are crucial. Recently, AHE has been counterintuitively observed in nonmagnetic topological materials and attributed to the existence of Weyl points. However, the Weyl point scenario would lead to unsaturated AHE even in large magnetic fields and contradicts the saturation of AHE in several tesla (T) in experiments. In this work, we investigate the Hall effect of ZrTe5 and HfTe5 thin flakes in static ultrahigh magnetic fields up to 33 T. We find the AHE saturates to 55(70)Ω1cm1 for ZrTe5 (HfTe5) thin flakes above ~10T. Combining detailed magnetotransport experiments and Berry curvature calculations, we clarify that the splitting of massive Dirac bands without Weyl points can be responsible for AHE in nonmagnetic topological materials ZrTe5 and HfTe5 thin flakes. This model can identify our thin flake samples to be weak topological insulators and serve as a tool to probe the band structure topology in topological materials.

While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without an inversion center allow for a nonlinear type of anomalous Hall effect whilst retaining time reversal symmetry. The effect may arise from either Berry curvature or through various asymmetric scattering mechanisms. Here, we report the observation of an extremely large c-axis nonlinear anomalous Hall effect in the non-centrosymmetric Td phase of MoTe2 and WTe2 without intrinsic magnetic order. We find that the effect is dominated by skew-scattering at higher temperatures combined with another scattering process active at low temperatures. Application of higher bias yields an extremely large Hall ratio of E⊥/E|| = 2.47 and corresponding anomalous Hall conductivity of order 8 × 107 S/m.

Using high-harmonic generation spectroscopy, we reveal the underlying attosecond dynamics in multi-band solid-state systems. We identify the mapping of spectral caustics into the high-harmonic spectrum, and probe the structure of multiple unpopulated high conduction bands.

In layered magnetic materials, the magnetic coupling between neighboring van der Waals layers is challenging to understand and anticipate, although the exchange interaction inside a layer can be well rationalized for example by the superexchange mechanism. In this work, we elucidate the interlayer exchange mechanism and propose an electron-counting rule to determine the interlayer magnetic order between van der Waals layers, based on counting the d-orbital occupation (dⁿ, where n is the number of d-electrons at the magnetic cation). With this rule, we classify magnetic monolayers into two groups, type-I (n

Surface arcs (SAs) or Fermi arcs connecting pairs of bulk Weyl points with opposite chiralities are the signatures of Weyl semimetals in angle-resolved photoemission spectroscopy (ARPES) studies. The nontrivial topology of the bulk band structure guarantees the existence of these exotic Fermi arcs with connectivity that is strongly dependent on the surface. It has been theoretically proposed and experimentally confirmed that Fermi arcs at opposite surfaces can complete an unusual closed cyclotron orbit called a Weyl orbit, which leads to various intriguing transport properties. In this paper, a systematic ARPES study on opposite terminations (001) of type-II Weyl semimetal NbIrTe4 reveals different Fermi arc connections which result in a unique closed intersurface Fermi arc loop configurations (combining both projections of SAs) containing two pairs of Weyl points. In particular, the top surface ARPES data and corresponding ab initio calculation suggests that a topological Lifshitz transition occurs by tuning the chemical potential. SA rewiring on the top surface opens the intersurface arc loop at the Weyl node energy level into an open line, challenging the close-orbit description and leading to an unexplored scenario. Our results demonstrate the intrinsic alteration of Fermi arc connections and propose NbIrTe4 as a potential platform to examine Fermi-arc related phenomenon.

We study a two-dimensional heterostructure comprised of a monolayer of the magnetic insulator chromium triiodide (CrI3) on a superconducting lead (Pb) substrate. Through first-principles computation and a tightbinding model, we demonstrate that charge transfer from the Pb substrate dopes the CrI3 into an effective half-metal, allowing for the onset of a gapless topological superconductivity phase via the proximity effect. This phase, in which there exists a superconducting gap only in part of the Fermi surface, is shown to occur generically in two-dimensional (2D) half-metal-superconductor heterostructures which lack twofold in-plane rotational symmetry. However, a sufficiently large proximity-induced pairing amplitude can bring such a system into a fully gapped topological superconducting (TSC) phase. As such, these results are expected to better define the optimal 2D component materials for future proposed TSC heterostructures.

Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond twofold and fourfold degenerate Weyl and Dirac fermions, threefold, sixfold, and eightfold symmetry protected degeneracies have been predicted. However they remain challenging to realize in solid state materials. Here the charge density wave compound TaTe4 is proposed to hold eightfold fermionic excitation and Dirac point in energy bands. High quality TaTe4 single crystals are prepared, where the charge density wave is revealed by directly imaging the atomic structure and a pseudogap of about 45 meV on the surface. Shubnikov-de Haas oscillations of TaTe4 are consistent with band structure calculation. Scanning tunneling microscopy/spectroscopy reveals atomic step edge states on the surface of TaTe4. This work uncovers that the charge density wave is able to induce new topological phases and sheds new light on the novel excitations in condensed matter materials.

FeSe0.45Te0.55 (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion. We present here a comprehensive angle resolved photoemission (ARPES) study of FeSeTe as a function of photon energies ranging from 15-100 eV. We find that although the top of the bulk valence band shows essentially no k(z), dispersion, its normalized intensity exhibits a periodic variation with k(z). We show, using ARPES selection rules, that the intensity oscillation is a signature of band inversion indicating a change in the parity going from Gamma to Z. We also present a simple realistic tight-binding model which gives insight into ARPES observations. Thus we provide direct evidence for a topologically nontrivial bulk band structure that supports protected surface states.

The Wiedemann-Franz (WF) law has been tested in numerous solids, but the extent of its relevance to the anomalous transverse transport and the topological nature of the wave function, remains an open question. Here, we present a study of anomalous transverse response in the noncollinear antiferromagnet Mn3Ge extended from room temperature down to sub-kelvin temperature and find that the anomalous Lorenz ratio remains close to the Sommerfeld value up to 100 K but not above. The finite-temperature violation of the WF correlation is caused by a mismatch between the thermal and electrical summations of the Berry curvature and not by inelastic scattering. This interpretation is backed by our theoretical calculations, which reveals a competition between the temperature and the Berry curvature distribution. The data accuracy is supported by verifying the anomalous Bridgman relation. The anomalous Lorenz ratio is thus an extremely sensitive probe of the Berry spectrum of a solid.

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. A strong exchange bias of similar to 40 meV originates from the long Cr-e(g) orbital tails that hybridize strongly with Te p orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Moreover, the high-Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically non-trivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with the minimum number of Weyl points. Here, we report the discovery of surface superconductivity in Weyl semimetal TaIrTe4. Our scanning tunneling microscopy/spectroscopy (STM/STS) visualizes Fermi arc surface states of TaIrTe4 that are consistent with the previous angle-resolved photoemission spectroscopy results. By a systematic study based on STS at ultralow temperature, we observe uniform superconducting gaps on the sample surface. The superconductivity is further confirmed by electrical transport measurements at ultralow temperature, with an onset transition temperature (T-c) up to 1.54 K being observed. The normalized upper critical field h*(T/T-c) behavior and the stability of the superconductivity against the ferromagnet indicate that the discovered superconductivity is unconventional with the p-wave pairing. The systematic STS, and thickness- and angular-dependent transport measurements reveal that the detected superconductivity is quasi-1D and occurs in the surface states. The discovery of the surface superconductivity in TaIrTe4 provides a new novel platform to explore topological superconductivity and Majorana modes.

In recent years, transition metal dichalcogenides (TMDs) have garnered great interest as topological materials. In particular, monolayers of centrosymmetric beta-phase TMDs have been identified as 2D topological insulators (TIs), and bulk crystals of noncentrosymmetric gamma-phase MoTe2 and WTe2 have been identified as type-II Weyl semimetals. However, angle-resolved photoemission spectroscopy and STM probes of these semimetals have revealed huge, arclike surface states that overwhelm, and are sometimes mistaken for, the much smaller topological surface Fermi arcs of bulk type-II Weyl points. In this Letter, we calculate the bulk and surface electronic structure of both beta- and gamma-MoTe2. We find that beta-MoTe2 is, in fact, a Z(4)-nontrivial higher-order TI (HOTI) driven by double band inversion and exhibits the same surface features as gamma-MoTe2 and gamma-WTe2. We discover that these surface states are not topologically trivial, as previously characterized by the research that differentiated them from the Weyl Fermi arcs but, rather, are the characteristic split and gapped fourfold Dirac surface states of a HOTI. In beta-MoTe2, this indicates that it would exhibit helical pairs of hinge states if it were bulk insulating, and in gamma-MoTe2 and gamma-WTe2, these surface states represent vestiges of HOTI phases without inversion symmetry that are nearby in parameter space. Using nested Wilson loops and first-principles calculations, we explicitly demonstrate that, when the Weyl points in gamma-MoTe2 are annihilated, which may be accomplished by symmetry-preserving strain or lattice distortion, gamma-MoTe2 becomes a nonsymmetry-indicated, noncentrosymmetric HOTI. We also show that, when the effects of spin-orbit coupling are neglected, beta-MoTe2 is a nodal-line semimetal with Z(2)-nontrivial monopole nodal lines (MNLSM). This finding confirms that MNLSMs driven by double band inversion are the weak-spin-orbit coupling limit of HOTIs, implying that MNLSMs are higher-order topological semimetals with flat-band-like hinge states, which we find to originate from the corner modes of 2D "fragile" TIs.

Surface Fermi arcs (SFAs), the unique open Fermi-surfaces (FSs) discovered recently in topological Weyl semimetals (TWSs), are unlike closed FSs in conventional materials and can give rise to many exotic phenomena, such as anomalous SFA-mediated quantum oscillations, chiral magnetic effects, three-dimensional quantum Hall effect, non-local voltage generation and anomalous electromagnetic wave transmission. Here, by using in-situ surface decoration, we demonstrate successful manipulation of the shape, size and even the connections of SFAs in a model TWS, NbAs, and observe their evolution that leads to an unusual topological Lifshitz transition not caused by the change of the carrier concentration. The phase transition teleports the SFAs between different parts of the surface Brillouin zone. Despite the dramatic surface evolution, the existence of SFAs is robust and each SFA remains tied to a pair of Weyl points of opposite chirality, as dictated by the bulk topology.

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point fermion material. We show that the electrical resistivity is 6 n Omega cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures.

In principle the stacking of different two-dimensional (2D) materials allows the construction of 3D systems with entirely new electronic properties. Here we propose to realize topological crystalline insulators (TCI) protected by mirror symmetry in heterostructures consisting of graphene monolayers separated by two-dimensional polar spacers. The polar spacers are arranged such that they can induce an alternating doping and/or spin-orbit coupling in the adjacent graphene sheets. When spin-orbit coupling dominates, the nontrivial phase arises due to the fact that each graphene sheet enters a quantum spin-Hall phase. Instead, when the graphene layers are electron and hole doped in an alternating fashion, a uniform magnetic field leads to the formation of quantum Hall phases with opposite Chern numbers. It thus has the remarkable property that unlike previously proposed and observed TCIs, the nontrivial topology is generated by an external time-reversal breaking perturbation.

We studied the nonlinear electric response in WTe₂ and MoTe₂ monolayers. When the inversion symmetry is breaking but the the time-reversal symmetry is preserved, a second-order Hall effect called the nonlinear anomalous Hall effect (NLAHE) emerges owing to the nonzero Berry curvature on the nonequilibrium Fermi surface. We reveal a strong NLAHE with a Hall-voltage that is quadratic with respect to the longitudinal current. The optimal current direction is normal to the mirror plane in these two-dimensional (2D) materials. The NLAHE can be sensitively tuned by an out-of-plane electric field, which induces a transition from a topological insulator to a normal insulator. Crossing the critical transition point, the magnitude of the NLAHE increases, and its sign is reversed. Our work paves the way to discover exotic nonlinear phenomena in inversion-symmetry-breaking 2D materials.

Spin-resolved band structures of L-gap surface states on Ag(111) and Cu(111) are investigated by spin- and angle-resolved photoelectron spectroscopy (SARPES) with a vacuum-ultraviolet laser. The observed spin textures of the Ag(111) and Cu(111) surface states agree with that expected by the conventional Rashba effect. The Rashba parameter of the Ag(111) surface state is estimated quantitatively and is 80% of that of Cu(111). The surface-state wave function is found to be predominantly of even mirror symmetry with negligible odd contribution by SARPES using a linearly polarized light. The results are consistent with our theoretical calculations for the orbital-resolved surface state.

Exotic electronic states are realized in novel quantum materials. This field is revolutionized by the topological classification of materials. Such compounds necessarily host unique states on their boundaries. Scanning tunneling microscopy studies of these surface states have provided a wealth of spectroscopic characterization, with the successful cooperation of ab initio calculations. The method of quasiparticle interference imaging proves to be particularly useful for probing the dispersion relation of the surface bands. Herein, how a variety of additional fundamental electronic properties can be probed via this method is reviewed. It is demonstrated how quasiparticle interference measurements entail mesoscopic size quantization and the electronic phase coherence in semiconducting nanowires; helical spin protection and energy-momentum fluctuations in a topological insulator; and the structure of the Bloch wave function and the relative insusceptibility of topological electronic states to surface potential in a topological Weyl semimetal.

Recent years have seen the rising importance of interface stacking in determining the electronic properties of multilayer materials stemming from the interlayer coupling; however, the stacking effects on exotic topological quantum orders largely remain to be explored. Here, we show by first-principles studies that bilayer Bi2Te3 host stacking is dependent on quantum spin Hall effects, with a topological phase transition induced by a change in the interlayer stacking pattern. The spin-filtered helical edge states are concomitantly switched on/off along with the changing interlayer stacking pattern. Since few-layer Bi2Te3 has already been experimentally synthesized, the present finding opens an avenue for exploring the fundamental mechanisms and the practical implications of the quantum phenomena associated with band topology in this versatile and intriguing 2D material. Published by AIP Publishing.

Three-dimensional topological semi-metals carry quasiparticle states that mimic massless relativistic Dirac fermions, elusive particles that have never been observed in nature. As they appear in the solid body, they are not bound to the usual symmetries of space-time and thus new types of fermionic excitations that explicitly violate Lorentz-invariance have been proposed, the so-called type-II Dirac fermions. We investigate the electronic spectrum of the transition-metal dichalcogenide PtSe2 by means of quantum oscillation measurements in fields up to 65 T. The observed Fermi surfaces agree well with the expectations from band structure calculations, that recently predicted a type-II Dirac node to occur in this material. A hole- and an electron-like Fermi surface dominate the semi-metal at the Fermi level. The quasiparticle mass is significantly enhanced over the bare band mass value, likely by phonon renormalization. Our work is consistent with the existence of type-II Dirac nodes in PtSe2, yet the Dirac node is too far below the Fermi level to support free Dirac-fermion excitations.

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by CH2OH, which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

Noncentrosymmetric metals are anticipated to exhibit a dc photocurrent in the nonlinear optical response caused by the Berry curvature dipole in momentum space. Weyl semimetals (WSMs) are expected to be excellent candidates for observing these nonlinear effects because they carry a large Berry curvature concentrated in small regions, i.e., near the Weyl points. We have implemented the semiclassical Berry curvature dipole formalism into an ab initio scheme and investigated the second-order nonlinear response for two representative groups of materials: the TaAs-family type-I WSMs and the MoTe2-family type-II WSMs. Both types of WSMs exhibited a Berry curvature dipole in which type-II Weyl points are usually superior to the type-I WSM because of the strong tilt. Corresponding nonlinear susceptibilities in several materials promise a nonlinear Hall effect in the dc field limit, which is within the experimentally detectable range.

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighboring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP2 and MoP2, which are type-II Weyl semimetals with robust Weyl points by transport, angle resolved photoemission spectroscopy and first principles calculations. Our single crystals of WP2 display an extremely low residual low-temperature resistivity of 3 n Omega cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. We observe a large suppression of charge carrier backscattering in WP2 from transport measurements. These properties are likely a consequence of the novel Weyl fermions expressed in this compound.

Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHgX (X=As, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHgX guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the "hourglass Fermion" recently proposed. Our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.

The conservation laws, such as those of charge, energy and momentum, have a central role in physics. In some special cases, classical conservation laws are broken at the quantum level by quantum fluctuations, in which case the theory is said to have quantum anomalies. One of the most prominent examples is the chiral anomaly, which involves massless chiral fermions. These particles have their spin, or internal angular momentum, aligned either parallel or antiparallel with their linear momentum, labelled as left and right chirality, respectively. In three spatial dimensions, the chiral anomaly is the breakdown (as a result of externally applied parallel electric and magnetic fields) of the classical conservation law that dictates that the number of massless fermions of each chirality are separately conserved. The current that measures the difference between left- and right-handed particles is called the axial current and is not conserved at the quantum level. In addition, an underlying curved space-time provides a distinct contribution to a chiral imbalance, an effect known as the mixed axial-gravitational anomaly, but this anomaly has yet to be confirmed experimentally. However, the presence of a mixed gauge-gravitational anomaly has recently been tied to thermoelectrical transport in a magnetic field, even in flat space-time, suggesting that such types of mixed anomaly could be experimentally probed in condensed matter systems known as Weyl semimetals. Here, using a temperature gradient, we observe experimentally a positive magneto-thermoelectric conductance in the Weyl semimetal niobium phosphide (NbP) for collinear temperature gradients and magnetic fields that vanishes in the ultra-quantum limit, when only a single Landau level is occupied. This observation is consistent with the presence of a mixed axial-gravitational anomaly, providing clear evidence for a theoretical concept that has so far eluded experimental detection.

In this work, we construct a generalized Kane model with a coupling term between itinerant electron spins and local magnetic moments of antiferromagnetic ordering in order to describe the low-energy effective physics in a large family of antiferromagnetic half-Heusler materials. The topological properties of this generalized Kane model are studied and a large variety of topological phases, including the Dirac semimetal phase, Weyl semimetal phase, nodal line semimetal phase, type-B triple point semimetal phase, topological mirror (or glide) insulating phase, and antiferromagnetic topological insulating phase, are identified in different parameter regions of our effective models. In particular, we find that the system is always driven into the antiferromagnetic topological insulator phase once a bulk band gap is open, irrespective of the magnetic moment direction, thus providing a robust realization of antiferromagentic topological insulators. Furthermore, we discuss the possible realization of these topological phases in realistic antiferromagnetic half-Heusler materials. Our effective model provides a basis for the future study of physical phenomena in this class of materials.

The Ta181 quadrupole resonance [nuclear quadrupole resonance (NQR)] technique is utilized to investigate the microscopic magnetic properties of the Weyl semimetal TaP. We find three zero-field NQR signals associated with the transition between the quadrupole split levels for Ta with I=7/2 nuclear spin. A quadrupole coupling constant, νQ=19.250 MHz, and an asymmetric parameter of the electric field gradient, η=0.423, are extracted, in good agreement with band structure calculations. In order to examine the magnetic excitations, the temperature dependence of the spin-lattice relaxation rate (1/T1T) is measured for the f2 line (±5/2↔±3/2 transition). We find that there exist two regimes with quite different relaxation processes. Above T∗≈30 K, a pronounced (1/T1T) T2 behavior is found, which is attributed to the magnetic excitations at the Weyl nodes with temperature-dependent orbital hyperfine coupling. Below T∗, the relaxation is mainly governed by a Korringa process with 1/T1T=const, accompanied by an additional T-1/2-type dependence to fit our experimental data. We show that Ta NQR is a novel probe for the bulk Weyl fermions and their excitations.

A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor bismuth tellurohalide BiTeI with giant Rashba spin splitting. In this work, evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted topological quantum phase transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr, while resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that superconductivity may develop from the multivalley semiconductor phase. The superconducting transition temperature, T_c, increases with applied pressure and reaches a maximum value of 5.2 K at 23.5 GPa for BiTeI (4.8 K at 31.7 GPa for BiTeBr), followed by a slow decrease. The results demonstrate that BiTeX (X = I, Br) compounds with nontrivial topology of electronic states display new ground states upon compression.

The higher the energy of a particle is above equilibrium, the faster it relaxes because of the growing phase space of available electronic states it can interact with. In the relaxation process, phase coherence is lost, thus limiting high-energy quantum control and manipulation. In one-dimensional systems, high relaxation rates are expected to destabilize electronic quasiparticles. Here, we show that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves nonmonotonically with energy such that above a certain threshold hot electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing, for the first time, the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Pèrot resonators. A remarkable agreement with a theoretical model reveals that the nonmonotonic behavior is driven by the unique manner in which one-dimensional hot electrons interact with the cold electrons occupying the Fermi sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points through which conduction and valence bands cross linearly in the bulk and exotic Fermi arcs appear. The most intriguing transport phenomenon of a WSM is the chiral anomaly-induced negative magnetoresistance (NMR) in parallel electric and magnetic fields. In intrinsic NbP the Weyl points lie far from the Fermi energy, making chiral magneto-transport elusive. Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently close to the W2 Weyl points, for which the different Fermi surfaces are verified by resultant quantum oscillations. Consequently, we observe a NMR for parallel electric and magnetic fields, which is considered as a signature of the chiral anomaly in condensed-matter physics. The NMR survives up to room temperature, making NbP a versatile material platform for the development of Weyltronic applications.

We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh and Pt) by ab initio band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn3X materials exhibit a noncollinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that Mn3Ga shows a large SHC of about 600 (/e)(Ωcm)-1. Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagnetic materials.

Topological insulators and topological semimetals are both new classes of quantum materials, which are characterized by surface states induced by the topology of the bulk band structure. Topological Dirac or Weyl semimetals show linear dispersion around nodes, termed the Dirac or Weyl points, as the three-dimensional analog of graphene. We review the basic concepts and compare these topological states of matter from the materials perspective with a special focus on Weyl semimetals. The TaAs family is the ideal materials class to introduce the signatures of Weyl points in a pedagogical way, from Fermi arcs to the chiral magnetotransport properties, followed by hunting for the type-II Weyl semimetals in WTe2, MoTe2, and related compounds. Many materials are members of big families, and topological properties can be tuned. As one example, we introduce the multifunctional topological materials, Heusler compounds, in which both topological insulators and magnetic Weyl semimetals can be found. Instead of a comprehensive review, this article is expected to serve as a helpful introduction and summary by taking a snapshot of the quickly expanding field.

Recent experiments revealed that Mn₃Sn and Mn₃Ge exhibit a strong anomalous Hall effect at room temperature, provoking us to explore their electronic structures for topological properties. By ab initio band structure calculations, we have observed the existence of multiple Weyl points in the bulk and corresponding Fermi arcs on the surface, predicting antiferromagnetic Weyl semimetals in Mn₃Ge and Mn₃Sn. Here the chiral antiferromagnetism in the Kagome-type lattice structure is essential to determine the positions and numbers of Weyl points. Our work further reveals a new guiding principle to search for magnetic Weyl semimetals among materials that exhibit a strong anomalous Hall effect.

We investigated the electronic structure of the layered transition-metal dichalcogenides VS₂ and VSe₂ by first-principles calculations. Both compounds exhibit metal-insulator transitions when crossing over from the bulk to the two-dimensional monolayer. In the monolayer limit, the Coulomb interaction is enhanced due to the dimension reduction, leading to the insulating state. Moreover, these monolayers are found to be ferromagnetic, supplying excellent candidates for ferromagnetic insulators. When increasing the thickness, the few-layer structure turns metallic and presents large anomalous Hall conductivity (∼100 S/cm), which oscillates with respect to the thickness due to the size effect. Our findings presents profound materials, such as ferromagnetic insulators and anomalous Hall ferromagnets, for the spintronic application.

Since their discovery, topological insulators are expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin-momentum locking. However, the bulk doping problem remains an obstacle that hinders such an application. In this work, we predict that a newly discovered family of topological materials, the Weyl semimetals, exhibits a large intrinsic spin Hall effect that can be utilized to generate and detect spin currents. Our ab initio calculations reveal a large spin Hall conductivity in the TaAs family of Weyl materials. Considering the low charge conductivity of semimetals, Weyl semimetals are believed to present a larger spin Hall angle (the ratio of the spin Hall conductivity over the charge conductivity) than that of conventional spin Hall systems such as the 4d and 5d transition metals. The spin Hall effect originates intrinsically from the bulk band structure of Weyl semimetals, which exhibit a large Berry curvature and spin-orbit coupling, so the bulk carrier problem in the topological insulators is naturally avoided. Our work not only paves the way for employing Weyl semimetals in spintronics, but also proposes a new guideline for searching for the spin Hall effect in various topological materials.

Topological quantum materials represent a new class of matter with both exotic physical phenomena and novel application potentials. Many Heusler compounds, which exhibit rich emergent properties such as unusual magnetism, superconductivity and heavy fermion behaviour, have been predicted to host non-trivial topological electronic structures. The coexistence of topological order and other unusual properties makes Heusler materials ideal platform to search for new topological quantum phases (such as quantum anomalous Hall insulator and topological superconductor). By carrying out angle-resolved photoemission spectroscopy and ab initio calculations on rare-earth half-Heusler compounds LnPtBi (Ln=Lu, Y), we directly observe the unusual topological surface states on these materials, establishing them as first members with non-trivial topological electronic structure in this class of materials. Moreover, as LnPtBi compounds are non-centrosymmetric superconductors, our discovery further highlights them as promising candidates of topological superconductors.

Weyl semimetals are often considered the 3D-analogon of graphene or topological insulators. The evaluation of quantum oscillations in these systems remains challenging because there are often multiple conduction bands. We observe de Haas-van Alphen oscillations with several frequencies in a single crystal of the Weyl semimetal niobium phosphide. For each fundamental crystal axis, we can fit the raw data to a superposition of sinusoidal functions, which enables us to calculate the characteristic parameters of all individual bulk conduction bands using Fourier transform with an analysis of the temperature and magnetic field-dependent oscillation amplitude decay. Our experimental results indicate that the band structure consists of Dirac bands with low cyclotron mass, a non-trivial Berry phase and parabolic bands with a higher effective mass and trivial Berry phase.

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic elements for spintronic technologies. Spin-orbit torques are derived from spin currents created from charge currents in materials with significant spin-orbit coupling that propagate into an adjacent ferromagnetic material. A key challenge is to identify materials that exhibit large spin Hall angles, that is, efficient charge-to-spin current conversion. Using spin torque ferromagnetic resonance, we report the observation of a giant spin Hall angle θ^eff_SH of up to ~0.35 in (001)-oriented single-crystalline antiferromagnetic IrMn₃ thin films, coupled to ferromagnetic permalloy layers, and a θ^eff_SH that is about three times smaller in (111)-oriented films. For (001)-oriented samples, we show that the magnitude of θ^eff_SH can be significantly changed by manipulating the populations of various antiferromagnetic domains through perpendicular field annealing. We identify two distinct mechanisms that contribute to θ^eff_SH: the first mechanism, which is facet-independent, arises from conventional bulk spin-dependent scattering within the IrMn₃ layer, and the second intrinsic mechanism is derived from the unconventional antiferromagnetic structure of IrMn₃. Using ab initio calculations, we show that the triangular magnetic structure of IrMn₃ gives rise to a substantial intrinsic spin Hall conductivity that is much larger for the (001) than for the (111) orientation, consistent with our experimental findings.

Fermi arcs are the surface manifestation of the topological nature of Weyl semimetals, enforced by the bulk-boundary correspondence with the bulk Weyl nodes. The surface of tantalum arsenide, similar to that of other members of the Weyl semimetal class, hosts nontopological bands that obscure the exploration of this correspondence. We use the spatial structure of the Fermi arc wave function, probed by scanning tunneling microscopy, as a spectroscopic tool to distinguish and characterize the surface Fermi arc bands. We find that, as opposed to nontopological states, the Fermi arc wave function is weakly affected by the surface potential: it spreads rather uniformly within the unit cell and penetrates deeper into the bulk. Fermi arcs reside predominantly on tantalum sites, from which the topological bulk bands are derived. Furthermore, we identify a correspondence between the Fermi arc dispersion and the energy and momentum of the bulk Weyl nodes that classify this material as topological. We obtain these results by introducing an analysis based on the role the Bloch wave function has in shaping quantum electronic interference patterns. It thus carries broader applicability to the study of other electronic systems and other physical processes.

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface-state-like behavior in the magnetoresistance. The electrons responsible for this pseudo-two-dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle-dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (∼105%).

Starting from the three-dimensional Dirac semimetal in Na3Bi, we found a topological insulator (TI) in the known compound of NaBaBi by extra pressure. The TI of NaBaBi can be viewed as the distorted version of Na3Bi with breaking inversion symmetry. When the exchange-correlation energy is considered in generalized gradient approximation (GGA), the TI phase has a band inversion between the Bi-p and Na-s orbitals. Since GGA often overestimates the band inversion, we also performed more accurate calculations by using hybrid functional theory (HSE). From HSE calculations we found that NaBaBi exhibits as a trivial insulator at zero pressure, and the other TI phase with p-d inversion can be achieved by pressure. Though both of two TI phases have Dirac-cone-type surface states, they have opposite spin textures. In the upper cone, a lefthanded spin texture exists for the s-p inverted phase (similar to a common TI, e.g., Bi2Se3), whereas a righthanded spin texture appears for the p-d inverted phase. This work presents a prototype model of a TI exhibits righthanded spin texture.

Using first-principles density-functional theory, we have investigated the electronic and magnetic properties of recently synthesized and characterized 5d double-perovskites Sr2BOsO6(B=Y,In,Sc). The electronic structure calculations show that in all compounds the Os5+ (5d3) site is the only magnetically active one, whereas Y3+, In3+, and Sc3+ remain in nonmagnetic states with Sc/Y and In featuring d0 and d10 electronic configurations, respectively. Our studies reveal the important role of closed-shell (d10) versus open-shell (d0) electronic configurations of the nonmagnetic sites in determining the overall magnetic exchange interactions. Although the magnetic Os5+ (5d3) site is the same in all compounds, the magnetic superexchange interactions mediated by nonmagnetic Y/In/Sc species are strongest for Sr2ScOsO6, weakest for Sr2InOsO6, and intermediate in the case of the Y (d0) due to different energy overlaps between Os-5d and Y/In/Sc-d states. This explains the experimentally observed substantial differences in the magnetic transition temperatures of these materials, despite an identical magnetic site and underlying magnetic ground state. Furthermore, short-range Os-Os exchange interactions are more prominent than long-range Os-Os interactions in these compounds, which contrasts with the behavior of other 3d-5d double perovskites.

Transition metal dichalcogenides have attracted research interest over the last few decades due to their interesting structural chemistry, unusual electronic properties, rich intercalation chemistry and wide spectrum of potential applications. Despite the fact that the majority of related research focuses on semiconducting transition-metal dichalcogenides (for example, MoS₂), recently discovered unexpected properties of WTe₂ are provoking strong interest in semimetallic transition metal dichalcogenides featuring large magnetoresistance, pressure-driven superconductivity and Weyl semimetal states. We investigate the sister compound of WTe₂, MoTe₂, predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that bulk MoTe₂ exhibits superconductivity with a transition temperature of 0.10 K. Application of external pressure dramatically enhances the transition temperature up to maximum value of 8.2 K at 11.7 GPa. The observed dome-shaped superconductivity phase diagram provides insights into the interplay between superconductivity and topological physics.

We study the interaction effect in a three-dimensional Dirac semimetal and find that two competing orders, charge-density-wave orders and nematic orders, can be induced to gap the Dirac points. Applying a magnetic field can further induce an instability towards forming these ordered phases. The charge-density-wave phase is similar to that of a Weyl semimetal, while the nematic phase is unique for Dirac semimetals. Gapless zero modes are found in the vortex core formed by nematic order parameters, indicating the topological nature of nematic phases. The nematic phase can be observed experimentally using scanning tunneling microscopy.

Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still not fully known how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), which are supported on a TI Bi₂Se₃ substrate. It was found the adsorption energy of oxygen on the supported catalysts can be always enhanced due to the TSSs. However, it does not necessarily mean an increase of the activity in catalytic oxidation reaction. Rather, the enhanced adsorption behavior in the presence of TSSs exhibits dual effects, determined by the intrinsic reactivity of these catalysts with oxygen. For the Au case, the activity of catalytic oxidation can be improved because the TSSs can enhance the dissociation rate of dioxygen. In contrast, a negative effect is found for the Pt and Pd clusters since the TSSs will suppress the desorption process of reaction products. We also found that the effect of TSSs on the activity of hydrogen evolution reaction (HER) is quite similar (i.e., the metals with original weak reactivity can gain a positive effect from TSSs). The present work can pave a way for more rational design and selection of catalysts when using TIs as substrates.

We investigate the orthorhombic phase (Td) of the layered transition-metal dichalcogenide MoTe2 as a Weyl semimetal candidate. MoTe2 exhibits four pairs of Weyl points lying slightly above (∼6meV) the Fermi energy in the bulk band structure. Different from its cousin WTe2, which was recently predicted to be a type-II Weyl semimetal, the spacing between each pair of Weyl points is found to be as large as 4% of the reciprocal lattice in MoTe2 (six times larger than that of WTe2). When projected onto the surface, the Weyl points are connected by Fermi arcs, which can be easily accessed by angle-resolved photoemission spectroscopy due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive MoTe2 from a type-II to a type-I Weyl semimetal.

Very recently the topological Weyl semimetal (WSM) state was predicted in the noncentrosymmetric compounds NbP, NbAs, TaP, and TaAs and soon led to photoemission and transport experiments to verify the presumed topological properties such as Fermi arcs (unclosed Fermi surfaces) and the chiral anomaly. In this work we have performed fully ab initio calculations of the surface band structures of these four WSM materials and revealed the Fermi arcs with spin-momentum-locked spin texture. On the (001) polar surface, the shape of the Fermi surface depends sensitively on the surface terminations (cations or anions), although they exhibit the same topology with arcs. The anion (P or As) terminated surfaces are found to fit recent photoemission measurements well. Such surface potential dependence indicates that the shape of the Fermi surface can be sensitively manipulated by depositing guest species (such as K atoms), as we demonstrate. On the polar surface of a WSM without inversion symmetry, Rashba-type spin polarization naturally exists in the surface states and leads to strong spin texture. By tracing the spin polarization of the Fermi surface, one can distinguish Fermi arcs from trivial Fermi circles. The four compounds NbP, NbAs, TaP, and TaAs present an increasing amplitude of spin-orbit coupling (SOC) in band structures. By comparing their surface states, we reveal the evolution of topological Fermi arcs from the spin-degenerate Fermi circle to spin-split arcs when the SOC increases from zero to a finite value. Our work presents a comprehensive understanding of the topological surface states of WSMs, which will especially be helpful for future spin-revolved photoemission and transport experiments.

Recent experiments have revealed spectacular transport properties in semimetals, such as the large, non-saturating magnetoresistance exhibited by WTe 2 (ref.). Topological semimetals with massless relativistic electrons have also been predicted as three-dimensional analogues of graphene. These systems are known as Weyl semimetals, and are predicted to have a range of exotic transport properties and surface states, distinct from those of topological insulators. Here we examine the magneto-transport properties of NbP, a material the band structure of which has been predicted to combine the hallmarks of a Weyl semimetal with those of a normal semimetal. We observe an extremely large magnetoresistance of 850,000% at 1.85 K (250% at room temperature) in a magnetic field of up to 9 T, without any signs of saturation, and an ultrahigh carrier mobility of 5 × 10 6 cm 2 V â '1 s â '1 that accompanied by strong Shubnikov-de Haas (SdH) oscillations. NbP therefore presents a unique example of a material combining topological and conventional electronic phases, with intriguing physical properties resulting from their interplay.

Recent theoretical studies employing density-functional theory have predicted BaBiO₃ (when doped with electrons) and YBiO₃ to become a topological insulator (TI) with a large topological gap (∼0.7 eV). This, together with the natural stability against surface oxidation, makes the Bismuth-Oxide family of special interest for possible applications in quantum information and spintronics. The central question, we study here, is whether the hole-doped Bismuth Oxides, i.e. Ba_1-xK_xBiO₃ and BaPb_1-xBi_xO₃, which are "high-Tc" bulk superconducting near 30 K, additionally display in the further vicinity of their Fermi energy E_F a topological gap with a Dirac-type of topological surface state. Our electronic structure calculations predict the K-doped family to emerge as a TI, with a topological gap above E_F. Thus, these compounds can become superconductors with hole-doping and potential TIs with additional electron doping. Furthermore, we predict the Bismuth-Oxide family to contain an additional Dirac cone below E_F for further hole doping, which manifests these systems to be candidates for both electron- and hole-doped topological insulators.

One important feature of surface states in topological insulators is the so-called "spin-momentum locking," which means that electron spin is oriented along a fixed direction for a given momentum and forms a texture in the momentum space. In this work, we study spin textures of two typical topological insulators in Hg-based chalcogenides, namely, HgTe and HgS, based on both the first-principles calculation and the eight-band Kane model. We find opposite helicities of spin textures between these two materials, originating from the opposite signs of spin-orbit couplings. Based on the effective Kane model, we present a physical picture to understand opposite spin textures in these two materials with the help of the relationship between spin textures and mirror Chern numbers. We also reveal the existence of gapless states at the interface between HgTe and HgS due to the opposite spin textures and opposite mirror Chern numbers.

Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g∼16).

Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb₂Te₃ (or MoTe₂). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekulé deformation and symmetry breaking. The present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene.

We predict a family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X = Cl, Br, and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity-induced topological states. First-principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z₂ index and an explicit demonstration of metallic edge states. Such heterostructures offer a unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers ideas for innovative device designs.

Topological insulators are known for their metallic surface states, a result of strong spin-orbit coupling, that exhibit unique surface transport phenomenon. However, these surface transport phenomena are buried in the presence of metallic bulk conduction. We synthesized very high quality Bi2Te2Se single crystals by using a modified Bridgman method that possess high bulk resistivity of >20 Ωcm below 20 K, whereas the bulk is mostly inactive and surface transport dominates. The temperature dependence of resistivity follows an activation law like a gap semiconductor in temperature range 20-300 K. To extract the surface transport from that of the bulk, we designed a special measurement geometry to measure the resistance and found that single-crystal Bi2Te2Se exhibits a crossover from bulk to surface conduction at 20 K. Simultaneously, the material also shows strong evidence of weak antilocalization in magnetotransport owing to the protection against scattering by conducting surface states. This simple geometry facilitates finding evidence of surface transport in topological insulators, which are promising materials for future spintronic applications.

The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations assuming different strains and surface terminations. For the Te-terminated surface, a single Dirac cone exists at the Γ-point. The Dirac point shifts up from the bulk valence bands into the energy gap when the substrate-induced strain increases. At the experimental strain value (0.3%), the Dirac point lies slightly below the bulk valence band maximum. A left-handed spin texture was observed in the upper Dirac cone, similar to that of the Bi₂Se₃-type topological insulator. For the Hg-terminated surface, three Dirac cones appear at three time-reversal-invariant momenta, excluding the Γ-point, with non-trivial spin textures.

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi₂Te ₃). Our ab initio and tight-binding calculations show that a proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by an interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi₂Te₃, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

The insulating and antiferromagnetic double perovskite Sr₂FeOsO₆ has been studied by ⁵⁷Fe Mössbauer spectroscopy between 5 and 295 K. The iron atoms are essentially in the Fe³⁺ high spin (t_2g³) and thus the osmium atoms in the Os⁵⁺(t_2g³) state. Two magnetic phase transitions, which according to neutron diffraction studies occur below T _N = 140 K and T ₂ = 67 K, give rise to magnetic hyperfine patterns, which differ considerably in the hyperfine fields and thus, in the corresponding ordered magnetic moments. The evolution of hyperfine field distributions, average values of the hyperfine fields, and magnetic moments with temperature suggests that the magnetic state formed below T _N is strongly frustrated. The frustration is released by a magneto-structural transition which below T ₂ leads to a different spin sequence along the c-direction of the tetragonal crystal structure.

The binary compounds FeSi, RuSi, and OsSi are chiral insulators crystallizing in the space group P2₁₃ which is cubic. By means of ab initio calculations we find for these compounds a non-vanishing electronic Berry phase, the sign of which depends on the handedness of the crystal. There is thus the possibility that the Berry phase signals the existence of a macroscopic electric polarization due to the electrons. We show that this is indeed so if a small external magnetic field is applied in the [111] direction. The electric polarization is oscillatory in the magnetic field and possesses a signature that distinguishes the handedness of the crystal. Our findings add to the discussion of topological classifications of insulators and are significant for spintronics applications, and in particular, for a deeper understanding of skyrmions in insulators.

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi₂Se₃ by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23-0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.

The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Gamma point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

We investigate the structural stability and magnetic properties of the cubic, tetragonal and hexagonal phases of Mn₃Z (Z=Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn₃Ga and Mn₃Ge behave differently from Mn₃Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations for these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

In Dirac materials, like graphene or topological insulators, massless pseudorelativistic electrons promise new, very fast electronic devices by utilizing the partial suppression of backscattering. However, the semimetal nature of graphene makes the realization of practical field effect transistors difficult, due to small on-off current ratios. Here, we propose a new concept, based on Dirac states inside the conduction (or valence) band of a lightly doped wide band gap semiconductor. With the application of a gate voltage, the Dirac states become populated; that is, the Fermi level is switched between the "classical" high-resistivity semiconducting and the relativistic high-mobility metallic range. We demonstrate by theoretical calculations that such a transition can be realized, for example, in thin anatase nanowires, which have been synthesized before. Ta-doped anatase nanowires offer an excellent possibility to build field effect transistors with high speed and good on-off ratio. Guidelines for finding similar "Dirac semiconductors" are provided.

Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap [1-4]. Starting with the discovery of two-dimensional TIs, the HgTe-based quantum wells [5, 6], many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families [7], the HgTe family and the Bi₂Se₃ family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials [8-10]. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes where both good thermoelectric properties and topological insulators can be found.

A phosphorus (P) donor has been extensively studied in bulk Si to realize the concept of Kane quantum computers. In most cases the quantum bit was realized as an entanglement between the donor electron spin and the nonzero nuclei spin of the donor impurity mediated by the hyperfine coupling between them. The donor ionization energies and the spin-lattice relaxation time limited the temperatures to a few kelvin in these experiments. Here, we demonstrate by means of ab initio density functional theory calculations that quantum confinement in thin Si nanowires (SiNWs) results in (i) larger excitation energies of donor impurity and (ii) a sensitive manipulation of the hyperfine coupling by external electric field. We propose that these features may allow to realize the quantum bit (qubit) experiments at elevated temperatures with a strength of electric fields applicable in current field-effect transistor technology. We also show that the strength of quantum confinement and the presence of strain induced by the surface termination may significantly affect the ground and excited states of the donors in thin SiNWs, possibly allowing an optical read-out of the electron spin.

Recently, topological insulator materials have been theoretically predicted and experimentally observed in both 2D and 3D systems. We first review the basic models and physical properties of topological insulators, using HgTe and Bi ₂Se ₃ as prime examples. We then give a comprehensive survey of topological insulators which have been predicted so far, and discuss the current experimental status.

Due to the proximity to an embedding medium with low dielectric constant (e.g., oxides), semiconductor nanowires have higher impurity ionization energy than their bulk counterparts, resulting lower free carrier density. Using ab initio calculations within density functional theory, we propose a way to reduce the ionization energy in nanowires by fabricating a special cross section with appropriate engineering of doping and an applied gate voltage. We demonstrate on a phosphorus-doped silicon nanowire that the ionization energy can be effectively tuned and the impurity backscattering can also be reduced. For instance, even without special engineering of doping, the free carrier density may increase by 40% in a silicon nanowire with 15 nm diameter and special cross section. Our proposal has profound implications to fabricate nanowire devices with high carrier density.

Surface motion of a topological defect between p (2 × 2) and c (4 × 2) structures, a "kink", across buckled Sn-Ge and Si-Ge dimers on Ge(0 0 1) surfaces was investigated using scanning tunneling microscopy. Energy thresholds of π^* electrons for flipping these dimers in the kink are obtained by analyzing the kink surface motion. Electronic states of these systems and energy barriers for flipping the dimers are examined by first-principles calculations for considering elementary processes of the electronically-excited flip motion of the dimers. We propose that the flip motion is caused by a resonant scattering of the π^* electrons with localized electronic states at the kink.

Scattering potentials for π electrons at Si-Ge and Sn-Ge dimers on a Ge(001) surface are studied by scanning tunneling microscopy and ab initio calculations. Phase-shift analysis of standing waves in dI/dV images reveals that Si and Sn atoms located in the conduction path of π electrons form potentials with the sign opposite to each other. Density-functional calculations and simple calculations based on the nearly-free-electron model explain the observed potential structures. These results are qualitatively understood by relative p -orbital energy of the Si, Sn, and Ge atoms.