Materials engineer
Category:
IT and Engineering
Capacity:
Full Time
Job Number:
64106
Your role will include:
MBE Engineer (GaAs-based Heterostructures) at the Sub-Micron Center.
Material Growth and Development:
Performing epitaxial growth of GaAs-based heterostructures and nanostructures using MBE systems available at the Sub-Micron Center.
Developing and optimizing advanced growth recipes for novel heterostructures.
Establishing and refining calibration, monitoring, and characterization protocols – to ensure reproducibility and high growth quality.
Collaborations and Support:
- Providing MBE growth services and technical support to researchers, graduate students, and postdoctoral fellows at the Sub-Micron Center.
Collaborating with external partners and institutions to develop innovative material platforms for advanced device research. - System Operation and Maintenance:
- Maintaining MBE systems, vacuum infrastructure, and source materials to ensure reliable and continuous system operation.
Adhering to laboratory safety procedures and compliance with cleanroom and facility regulations.
Skills and abilities:
- PhD degree in Physics, Materials Science, Electrical Engineering, or another relevant field - an advantage.
- Hands-on experience in Molecular Beam Epitaxy (MBE) growth, especially of III-V semiconductors (such as GaAs, InAs, AlGaAs) - an advantage.
- Strong background in thin film characterization methods, such as RHEED, XRD, AFM, and Hall measurements.
- Proven ability to work collaboratively in a multidisciplinary research environment.
- Excellent communication and interpersonal skills."