Publications

The recently discovered kagome materials AV(3)Sb(5) (A = K, Rb, Cs) attract intense research interest in intertwined topology, superconductivity, and charge density waves (CDW). Although the in-plane 2 x 2 CDW is well studied, its out-of-plane structural correlation with the Fermi surface properties is less understood. In this work, we advance the theoretical description of quantum oscillations and investigate the Fermi surface properties in the three-dimensional CDW phase of CsV3Sb5. We derived Fermi-energy-resolved and layer-resolved quantum orbits that agree quantitatively with recent experiments in the fundamental frequency, cyclotron mass, and topology. We reveal a complex Dirac nodal network that would lead to a & pi; Berry phase of a quantum orbit in the spinless case. However, the phase shift of topological quantum orbits is contributed by the orbital moment and Zeeman effect besides the Berry phase in the presence of spin-orbital coupling (SOC). Therefore, we can observe topological quantum orbits with a & pi; phase shift in otherwise trivial orbits without SOC, contrary to common perception. Our work reveals the rich topological nature of kagome materials and paves a path to resolve different topological origins of quantum orbits.

Layer-by-layer material engineering has produced interesting quantum phenomena such as interfacial superconductivity and the quantum anomalous Hall effect. However, probing electronic states layer by layer remains challenging. This is exemplified by the difficulty in understanding the layer origins of topological electronic states in magnetic topological insulators. Here we report a layer-encoded frequency-domain photoemission experiment on the magnetic topological insulator (MnBi2Te4)(Bi2Te3) that characterizes the origins of its electronic states. Infrared laser excitations launch coherent lattice vibrations with the layer index encoded by the vibration frequency. Photoemission spectroscopy then tracks the electron dynamics, where the layer information is carried in the frequency domain. This layer-frequency correspondence shows wavefunction relocation of the topological surface state from the top magnetic layer into the buried second layer, reconciling the controversy over the vanishing broken-symmetry energy gap in (MnBi2Te4)(Bi2Te3) and its related compounds. The layer-frequency correspondence can be harnessed to disentangle electronic states layer by layer in a broad class of van der Waals superlattices.
Layering quantum materials can produce interesting phenomena by combining the different behaviour of electronic states in each layer. A layer-sensitive measurement technique provides insights into the physics of a magnetic topological insulator.

Electron correlations often lead to emergent orders in quantum materials, and one example is the kagome lattice materials where topological states exist in the presence of strong correlations between electrons. This arises from the features of the electronic band structure that are associated with the kagome lattice geometry: flat bands induced by destructive interference of the electronic wavefunctions, topological Dirac crossings and a pair of van Hove singularities. Various correlated electronic phases have been discovered in kagome lattice materials, including magnetism, charge density waves, nematicity and superconductivity. Recently, a charge density wave was discovered in the magnetic kagome FeGe, providing a platform for understanding the interplay between charge order and magnetism in kagome materials. Here we observe all three electronic signatures of the kagome lattice in FeGe using angle-resolved photoemission spectroscopy. The presence of van Hove singularities near the Fermi level is driven by the underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the charge density wave as gaps near the Fermi level. Our observations point to the magnetic interaction-driven band modification resulting in the formation of the charge density wave and indicate an intertwined connection between the emergent magnetism and charge order in this moderately correlated kagome metal.

Kagome materials are emerging platforms for studying charge and spin orders. In this Letter, we have revealed a rich lattice instability in a Z2 kagome metal ScV6Sn6 by first-principles calculations. Beyond verifying the √3×√3×3 charge density wave (CDW) order observed by the recent experiment, we further identified three more possible CDW structures, i.e., √3×√3×2 CDW with P6/mmm symmetry, 2×2×2 CDW with Immm symmetry, and 2×2×2 CDW with P6/mmm symmetry. The former two are more energetically favored than the √3×√3×3 phase, while the third one is comparable in energy. These CDW distortions involve mainly out-of-plane motions of Sc and Sn atoms, while V atoms constituting the kagome net are almost unchanged. We attribute the lattice instability to the smallness of Sc atomic radius. In contrast, such instability disappears in its sister compounds RV6Sn6 (R is Y, or a rare-earth element), which exhibit quite similar electronic band structures to the Sc compound, because R has a larger atomic radius. Our work indicates that ScV6Sn6 might exhibit varied CDW phases in different experimental conditions and provides insights to explore rich charge orders in kagome materials.

Can a generic magnetic insulator exhibit a Hall current? The quantum anomalous Hall effect (QAHE) is one example of an insulating bulk carrying a quantized Hall conductivity while insulators with zero Chern number present zero Hall conductance in the linear response regime. Here, we find that a general magnetic insulator possesses a nonlinear Hall conductivity quadratic to the electric field if the system breaks inversion symmetry, which can be identified as a new type of multiferroic coupling. This conductivity originates from an induced orbital magnetization due to virtual interband transitions. We identify three contributions to the wavepacket motion, a velocity shift, a positional shift, and a Berry curvature renormalization. In contrast to the crystalline solid, we find that this nonlinear Hall conductivity vanishes for Landau levels of a 2D electron gas, indicating a fundamental difference between the QAHE and the integer quantum Hall effect.

Electron hydrodynamics typically emerges in electron fluids with a high electron–electron collision rate. However, new experiments with thin flakes of WTe2 have revealed that other momentum-conserving scattering processes can replace the role of the electron–electron interaction, thereby leading to a novel, so-called para-hydrodynamic regime. Here, we develop the kinetic theory for para-hydrodynamic transport. To this end, we consider a ballistic electron gas in a thin three-dimensional sheet where the momentum-relaxing (lmr) and momentum-conserving (lmc) mean free paths are decreased due to boundary scattering from a rough surface. The resulting effective mean free path of the in-plane components of the electronic flow is then expressed in terms of microscopic parameters of the sheet boundaries, predicting that a para-hydrodynamic regime with lmr ≫ lmc emerges generically in ultraclean three-dimensional materials. Using our approach, we recover the transport properties of WTe2 in the para-hydrodynamic regime in good agreement with existing experiments.

During the past two decades, it has been established that a non-trivial electron wave-function topology generates an anomalous Hall effect (AHE), which shows itself as a Hall conductivity non-linear in magnetic field. Here, we report on an unprecedented case of field-linear AHE. In Mn3Sn, a kagome magnet, the out-of-plane Hall response, which shows an abrupt jump, was discovered to be a case of AHE. We find now that the in-plane Hall response, which is perfectly linear in magnetic field, is set by the Berry curvature of the wavefunction. The amplitude of the Hall response and its concomitant Nernst signal exceed by far what is expected in the semiclassical picture. We argue that magnetic field induces out-of-plane spin canting and thereafter gives rise to nontrivial spin chirality on the kagome lattice. In band structure, we find that the spin chirality modifies the topology by gapping out Weyl nodal lines unknown before, accounting for the AHE observed. Our work reveals intriguing unification of real-space Berry phase from spin chirality and momentum-space Berry curvature in a kagome material.

Many experiments observed a metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in MnBi2Te4 thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission spectroscopy, while it can become a Chern insulator at field larger than 6 T (ferromagnetic phase, FM). Thus, the zero-field surface magnetism was once speculated to be different from the bulk AFM phase. However, recent magnetic force microscopy refutes this assumption by detecting persistent AFM order on the surface. In this Letter, we propose a mechanism related to surface defects that can rationalize these contradicting observations in different experiments. We find that co-antisites (exchanging Mn and Bi atoms in the surface van der Waals layer) can strongly suppress the magnetic gap down to several meV in the AFM phase without violating the magnetic order but preserve the magnetic gap in the FM phase. The different gap sizes between AFM and FM phases are caused by the exchange interaction cancellation or collaboration of the top two van der Waals layers manifested by defect-induced surface charge redistribution among the top two van der Waals layers. This theory can be validated by the position- and field-dependent gap in future surface spectroscopy measurements. Our work suggests suppressing related defects in samples to realize the quantum anomalous Hall insulator or axion insulator at zero fields.

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic 1H- and a Mott-insulating 1T-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

Chiral circularly polarized (CP) light is central to many photonic technologies, from the optical communication of spin information to novel display and imaging technologies. As such, there has been significant effort in the development of chiral emissive materials that enable the emission of strongly dissymmetric CP light from organic light-emitting diodes (OLEDs). It has been widely accepted that the molecular chirality of the active layer determines the favoured light handedness of the CP emission in such devices, regardless of the light-emitting direction. Here we discover that, unconventionally, oppositely propagating CP light exhibits opposite handedness, and reversing the current flow in OLEDs also switches the handedness of the emitted CP light. This direction-dependent CP emission boosts the net polarization rate by orders of magnitude by resolving an established issue in CP-OLEDs, where the CP light reflected by the back electrode typically erodes the measured dissymmetry. Through detailed theoretical analysis, we assign this anomalous CP emission to a ubiquitous topological electronic property in chiral materials, namely orbital–momentum locking. Our work paves the way to design new chiroptoelectronic devices and probes the close connections between chiral materials, topological electrons and CP light in the quantum regime.

Tailoring magnetic orders in topological insulators is critical to the realization of topological quantum phenomena. An outstanding challenge is to find a material where atomic defects lead to tunable magnetic orders while maintaining a nontrivial topology. Here, by combining magnetization measurements, angle-resolved photoemission spectroscopy, and transmission electron microscopy, we reveal disorder-enabled, tunable magnetic ground states in MnBi6Te10. In the ferromagnetic phase, an energy gap of 15 meV is resolved at the Dirac point on the MnBi2Te4 termination. In contrast, antiferromagnetic MnBi6Te10 exhibits gapless topological surface states on all terminations. Transmission electron microscopy and magnetization measurements reveal substantial Mn vacancies and Mn migration in ferromagnetic MnBi6Te10. We provide a conceptual framework where a cooperative interplay of these defects drives a delicate change of overall magnetic ground state energies and leads to tunable magnetic topological orders. Our work provides a clear pathway for nanoscale defect-engineering toward the realization of topological quantum phases.

We propose a novel heterostructure to achieve chiral topological superconductivity in two dimensions. A substrate with a large Rashba spin-orbit coupling energy is brought in proximity to a twisted bilayer of thin films exfoliated from a high-temperature cuprate superconductor. The combined system is then exposed to an out-of-plane magnetic field. The rare d + id pairing symmetry expected to occur in such a system allows for nontrivial topology; specifically, in contrast to the case of the twisted bilayer in isolation, the substrate induces an odd Chern number. The resulting phase is characterized by the presence of a Majorana zero mode in each vortex.

The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity. The origins of CDWs, unconventional superconductivity, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV3Sb5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV3−xTixSb5 shows two distinct superconductivity phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the superconductivity phases and CDWs. These findings open up a way to synthesise a new family of doped CsV3Sb5 materials, and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

Magnetic topological insulators (MnBi2Te4)(Bi2Te3)n were anticipated to exhibit magnetic energy gaps, while recent spectroscopic studies did not observe them. Thus, magnetism on the surface is under debate. In this work, we propose another symmetry criterion to probe surface magnetism. Because of both time-reversal symmetry breaking and inversion symmetry breaking, we demonstrate that the surface band structure violates momentum-inversion symmetry and leads to a threefold rather than sixfold rotational symmetry on the Fermi surface if corresponding surface states couple strongly to the surface magnetism. Such a momentum-inversion symmetry violation is significant along the Γ-K direction for surface bands on the (0001) plane, which serves as a criterion for determining the surface magnetism.

Symmetries, quantum geometries and electronic correlations are among the most important ingredients of condensed matters, and lead to nontrivial phenomena in experiments, for example, non-reciprocal charge transport. Of particular interest is whether the non-reciprocal transport can be manipulated. Here, we report the controllable large non-reciprocal charge transport in the intrinsic magnetic topological insulator MnBi2Te4. The current direction relevant resistance is observed at chiral edges, which is magnetically switchable, edge position sensitive and stacking sequence controllable. Applying gate voltage can also effectively manipulate the non-reciprocal response. The observation and manipulation of non-reciprocal charge transport reveals the fundamental role of chirality in charge transport of MnBi2Te4, and pave ways to develop van der Waals spintronic devices by chirality engineering.

The electronic instabilities in CsV3Sb5 are believed to originate from the V 3d-electrons on the kagome plane, however the role of Sb 5p-electrons for 3-dimensional orders is largely unexplored. Here, using resonant tender X-ray scattering and high-pressure X-ray scattering, we report a rare realization of conjoined charge density waves (CDWs) in CsV3Sb5, where a 2 × 2 × 1 CDW in the kagome sublattice and a Sb 5p-electron assisted 2 × 2 × 2 CDW coexist. At ambient pressure, we discover a resonant enhancement on Sb L1-edge (2s→5p) at the 2 × 2 × 2 CDW wavevectors. The resonance, however, is absent at the 2 × 2 × 1 CDW wavevectors. Applying hydrostatic pressure, CDW transition temperatures are separated, where the 2 × 2 × 2 CDW emerges 4 K above the 2 × 2 × 1 CDW at 1 GPa. These observations demonstrate that symmetry-breaking phases in CsV3Sb5 go beyond the minimal framework of kagome electronic bands near van Hove filling.

Chirality has been a property of central importance in chemistry and biology for more than a century, and is now taking on increasing relevance in condensed matter physics. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive. In this work, via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting strengths of spin-orbit coupling (SOC), we unambiguously identified the origin of the SOC, a necessity for the CISS effect, given the negligible SOC in organic molecules. The experiments revealed that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results evidence the essential role of SOC in the metal electrode for engendering the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior. This work hence produces critical new insights on the microscopic mechanism of CISS, and more broadly, reveals a fundamental relation between structure chirality, electron spin, and orbital.

Van der Waals heterostructures offer great versatility to tailor unique interactions at the atomically flat interfaces between dissimilar layered materials and induce novel physical phenomena. By bringing monolayer 1 T’ WTe2, a two-dimensional quantum spin Hall insulator, and few-layer Cr2Ge2Te6, an insulating ferromagnet, into close proximity in an heterostructure, we introduce a ferromagnetic order in the former via the interfacial exchange interaction. The ferromagnetism in WTe2 manifests in the anomalous Nernst effect, anomalous Hall effect as well as anisotropic magnetoresistance effect. Using local electrodes, we identify separate transport contributions from the metallic edge and insulating bulk. When driven by an AC current, the second harmonic voltage responses closely resemble the anomalous Nernst responses to AC temperature gradient generated by nonlocal heater, which appear as nonreciprocal signals with respect to the induced magnetization orientation. Our results from different electrodes reveal spin-polarized edge states in the magnetized quantum spin Hall insulator.

Chirality-induced spin selectivity (CISS) refers to the fact that electrons get spin polarized after passing through organic chiral molecules in a nanoscale device. In CISS, chiral molecules are commonly believed to be a spin filter through which one favored spin transmits and the opposite spin gets reflected, i.e., transmitted and reflected electrons exhibit opposite spin polarization. In this work, we point out that such a spin filter scenario contradicts the principle that equilibrium spin current must vanish. Instead, we find that both transmitted and reflected electrons present the same type spin polarization, which is actually ubiquitous for a two-terminal device. More accurately, chiral molecules play the role of a spin polarizer rather than a spin filter. The direction of spin polarization is determined by the molecule chirality and the electron incident direction. And the magnitude of spin polarization replies on local spin-orbit coupling in the device. Our work brings a deeper understanding on CISS and interprets recent experiments, for example, the CISS-driven anomalous Hall effect.

Vortices are the hallmarks of hydrodynamic flow. Strongly interacting electrons in ultrapure conductors can display signatures of hydrodynamic behaviour, including negative non-local resistance1,2,3,4, higher-than-ballistic conduction5,6,7, Poiseuille flow in narrow channels8,9,10 and violation of the Wiedemann–Franz law11. Here we provide a visualization of whirlpools in an electron fluid. By using a nanoscale scanning superconducting quantum interference device on a tip12, we image the current distribution in a circular chamber connected through a small aperture to a current-carrying strip in the high-purity type II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that vortices are present for only small apertures, whereas the flow is laminar (non-vortical) for larger apertures. Near the vortical-to-laminar transition, we observe the single vortex in the chamber splitting into two vortices; this behaviour is expected only in the hydrodynamic regime and is not anticipated for ballistic transport. These findings suggest a new mechanism of hydrodynamic flow in thin pure crystals such that the spatial diffusion of electron momenta is enabled by small-angle scattering at the surfaces instead of the routinely invoked electron–electron scattering, which becomes extremely weak at low temperatures. This surface-induced para-hydrodynamics, which mimics many aspects of conventional hydrodynamics including vortices, opens new possibilities for exploring and using electron fluidics in high-mobility electron systems.

The kagome lattice provides a fertile platform to explore novel symmetry-breaking states. Charge-density wave (CDW) instabilities have been recently discovered in a new kagome metal family, commonly considered to arise from Fermi-surface instabilities. Here we report the observation of Raman-active CDW amplitude modes in CsV3Sb5, which are collective excitations typically thought to emerge out of frozen soft phonons, although phonon softening is elusive experimentally. The amplitude modes strongly hybridize with other superlattice modes, imparting them with clear temperature-dependent frequency shift and broadening, rarely seen in other known CDW materials. Both the mode mixing and the large amplitude mode frequencies suggest that the CDW exhibits the character of strong electron-phonon coupling, a regime in which phonon softening can cease to exist. Our work highlights the importance of the lattice degree of freedom in the CDW formation and points to the complex nature of the mechanism.

Magnetic topological insulators (MnBi2Te4)(Bi2Te3)n (n=0,1,2,3) are promising to realize exotic topological states such as the quantum anomalous Hall effect (QAHE) and axion insulator (AI), where the Bi2Te3 layer introduces versatility to engineer electronic and magnetic properties. However, whether surface states on the Bi2Te3 terminated facet are gapless or gapped is debated, and its consequences in thin-film properties are rarely discussed. In this work, we find that the Bi2Te3 terminated facets are gapless for n≥1 compounds by calculations. Although the surface Bi2Te3 (one layer or more) and underlying MnBi2Te4 layers hybridize and give rise to a gap, such a hybridization gap may overlap with bulk valence bands, leading to a gapless surface after all. Such a metallic surface poses a fundamental challenge to realize QAHE or AI, which requires an insulating gap in thin films with at least one Bi2Te3 surface. In theory, the insulating phase can still be realized in a film if both surfaces are MnBi2Te4 layers. Otherwise, it requires that the film thickness be less than 10-20nm to push down bulk valence bands via the size effect. Our work paves the way to understand surface states and design bulk-insulating quantum devices in magnetic topological materials.

The bulk photovoltaic effect (BPVE) converts light into a coherent dc current at zero bias, through what is commonly known as the shift current. This current has previously been attributed to the displacement of the electronic wave function center in real space, when the sample is excited by light. We reveal that materials like twisted bilayer graphene (TBG) with a flatband dispersion are uniquely suited to maximize the BPVE because they lead to an enhanced shift in the momentum space, unlike any previously known shift current mechanism. We identify properties of quantum geometry, which go beyond the quantum geometric tensor, and are unrelated to Berry charges, as the physical origin of the large BPVE we observe in TBG. Our calculations show that TBG with a band gap of several meV exhibits a giant BPVE in a range of 0.2-1 THz, which represents the strongest BPVE reported so far at this frequency in a two-dimensional material and partially persists even a room temperature. Our paper provides a design principle for shift current generation, which applies to a broad range of twisted heterostructures with the potential to overcome the so-called "terahertz gap"in THz sensing.

Kagome lattice is a fertile platform for topological and intertwined electronic excitations. Recently, experimental evidence of an unconventional charge density wave (CDW) is observed in a Z2 kagome metal AV3Sb5 (A=K, Cs, Rb). This observation triggers wide interest in the interplay between frustrated crystal structure and Fermi surface instabilities. Here, we analyze the lattice effect and its impact on CDW in AV3Sb5. Based on published experimental data, we show that the 2×2×2 CDW breaks the sixfold rotational symmetry of the crystal due to the phase shift between kagome layers and can explain the twofold symmetric CDW peak intensity observed by scanning tunneling spectroscopy. The coupling between the lattice and electronic degrees of freedom yields a weak first-order structural transition without continuous change of lattice dynamics. Our result emphasizes the fundamental role of lattice geometry in proper understanding of unconventional electronic orders in AV3Sb5.

We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). Angle-resolved photoemission directly reveals the Dirac-semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd3As2/permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface. We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin-transport and spin-charge conversion experiments in Cd3As2 devices that seek to invoke the role of topological Dirac and Fermi arc states.

The transition metal kagome lattice materials host frustrated, correlated and topological quantum states of matter1,2,3,4,5,6,7,8,9. Recently, a new family of vanadium-based kagome metals, AV3Sb5 (A = K, Rb or Cs), with topological band structures has been discovered10,11. These layered compounds are nonmagnetic and undergo charge density wave transitions before developing superconductivity at low temperatures11,12,13,14,15,16,17,18,19. Here we report the observation of unconventional superconductivity and a pair density wave (PDW) in CsV3Sb5 using scanning tunnelling microscope/spectroscopy and Josephson scanning tunnelling spectroscopy. We find that CsV3Sb5 exhibits a V-shaped pairing gap Δ ~ 0.5 meV and is a strong-coupling superconductor (2Δ/kBTc ~ 5) that coexists with 4a0 unidirectional and 2a0 × 2a0 charge order. Remarkably, we discover a 3Q PDW accompanied by bidirectional 4a0/3 spatial modulations of the superconducting gap, coherence peak and gap depth in the tunnelling conductance. We term this novel quantum state a roton PDW associated with an underlying vortex–antivortex lattice that can account for the observed conductance modulations. Probing the electronic states in the vortex halo in an applied magnetic field, in strong field that suppresses superconductivity and in zero field above Tc, reveals that the PDW is a primary state responsible for an emergent pseudogap and intertwined electronic order. Our findings show striking analogies and distinctions to the phenomenology of high-Tc cuprate superconductors, and provide groundwork for understanding the microscopic origin of correlated electronic states and superconductivity in vanadium-based kagome metals.

Co3Sn2S2 is a ferromagnetic semi-metal with Weyl nodes in its band structure and a large anomalous Hall effect below its Curie temperature of 177 K. We present a detailed study of its Fermi surface and examine the relevance of the anomalous transverse Wiedemann Franz law to it. We studied Shubnikov-de Haas oscillations along two orientations in single crystals with a mobility as high as $2.7\times10^3$ cm2 V−1 s−1 subject to a magnetic field as large as ∼60 T. The angle dependence of the frequencies is comparable with density functional theory (DFT) calculations and reveals two types of hole pockets (H1, H2) and two types of electron pockets (E1, E2). An additional unexpected frequency emerges at high magnetic field. We attribute it to magnetic breakdown between the hole pocket H2 and the electron pocket E2, since it is close to the sum of the E2 and H2 fundamental frequencies. By measuring the anomalous thermal and electrical Hall conductivities, we quantified the anomalous transverse Lorenz ratio, which is close to the Sommerfeld ratio ($L_0 = \frac{\pi^2}{3}\frac{k_B^2}{e^2}$) below 100 K and deviates downwards at higher temperatures. This finite temperature deviation from the anomalous Wiedemann–Franz law is a source of information on the distance between the sources and sinks of the Berry curvature and the chemical potential.

Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi 2 Te 4, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi 2 Te 4 via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi 2 Te 4, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi 2 n Te 3 n + 1.

The noncentrosymmetric transition-metal monopnictides NbP, TaP, NbAs, and TaAs are a family of Weyl semimetals in which pairs of protected linear crossings of spin-resolved bands occur. These so-called Weyl nodes are characterized by integer topological charges of opposite sign associated with singular points of Berry curvature in momentum space. In such a system, anomalous magnetoelectric responses are predicted, which should only occur if the crossing points are close to the Fermi level and enclosed by Fermi surface pockets penetrated by an integer flux of Berry curvature, dubbed Weyl pockets. TaAs is shown to possess Weyl pockets, whereas TaP and NbP have trivial pockets enclosing zero net flux of Berry curvature. Herein, via measurements of the magnetic torque, resistivity, and magnetization, a comprehensive quantum-oscillation study of NbAs is presented, the last member of this family where the precise shape and nature of the Fermi surface pockets is still unknown. Seven distinct frequency branches, three of which have not been observed before, are detected. A comparison with density functional theory calculations suggests that the two largest pockets are topologically trivial, whereas the low frequencies might stem from tiny Weyl pockets. The enclosed Weyl nodes are within a few meV of the Fermi energy.

Research on the anomalous Hall effect (AHE) has been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in which the extrinsic process related to scattering effects and intrinsic contribution connected with Berry curvature are crucial. Recently, AHE has been counterintuitively observed in nonmagnetic topological materials and attributed to the existence of Weyl points. However, the Weyl point scenario would lead to unsaturated AHE even in large magnetic fields and contradicts the saturation of AHE in several tesla (T) in experiments. In this work, we investigate the Hall effect of ZrTe5 and HfTe5 thin flakes in static ultrahigh magnetic fields up to 33 T. We find the AHE saturates to 55(70)Ω1cm1 for ZrTe5 (HfTe5) thin flakes above ~10T. Combining detailed magnetotransport experiments and Berry curvature calculations, we clarify that the splitting of massive Dirac bands without Weyl points can be responsible for AHE in nonmagnetic topological materials ZrTe5 and HfTe5 thin flakes. This model can identify our thin flake samples to be weak topological insulators and serve as a tool to probe the band structure topology in topological materials.

Discoveries of topological states and topological materials have reshaped our understanding of physics and materials over the past 15 years. First-principles calculations have had an important role in bridging the theory of topology and experiments by predicting realistic topological materials. In this Review, we offer an overview of the first-principles methodology on topological quantum materials. First, we unify different concepts of topological states in the same band inversion scenario. We then discuss the topology using first-principles band structures and newly established topological materials databases. We stress challenges in characterizing symmetry-independent Weyl semimetals and calculating topological surface states, closing with an outlook on the exciting transport and optical phenomena induced by the topology.

Twisted bilayer graphene (TBG) exhibits fascinating correlation-driven phenomena like the superconductivity and Mott insulating state, with flat bands and a chiral lattice structure. We find by quantum-transport calculations that the chirality leads to a giant unidirectional magnetoresistance (UMR) in TBG, where the unidirectionality refers to the resistance change under the reversal of the direction of current or magnetic field. We point out that flat bands significantly enhance this effect. The UMR increases quickly upon reducing the twist angle, and reaches about 20% for an angle of 1.5° in a 10 T in-plane magnetic field. We propose the band structure topology (asymmetry), which leads to a direction-sensitive mean free path, as a useful way to anticipate the UMR effect. The UMR provides a probe for chirality and band flatness in the twisted bilayers.

The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital current in OHE to the spin current via the spin-orbit coupling from the contact. Furthermore, we find that OHE can induce large nonreciprocal magnetoresistance when employing the magnetic contact. Both the generated spin current and the orbital Hall magnetoresistance can be applied to probe the OHE in experiments and design orbitronic devices.

In layered magnetic materials, the magnetic coupling between neighboring van der Waals layers is challenging to understand and anticipate, although the exchange interaction inside a layer can be well rationalized for example by the superexchange mechanism. In this work, we elucidate the interlayer exchange mechanism and propose an electron-counting rule to determine the interlayer magnetic order between van der Waals layers, based on counting thed-orbital occupation (d(n), wherenis the number ofd-electrons at the magnetic cation). With this rule, we classify magnetic monolayers into two groups, type-I (n= 5), and derive three types of interlayer magnetic coupling for both insulators and metals. The coupling between two type-II layers prefers the antiferromagnetic (AFM) order, while type-I and type-II interface favors the ferromagnetic (FM) way. However, for two type-I layers, they display a competition between FM and AFM orders and even lead to the stacking dependent magnetism. Additionally, metallic layers can also be incorporated into this rule with a minor correction from the free carrier hopping. Therefore, this rule provides a simple guidance to understand the interlayer exchange and further design van der Waals junctions with desired magnetic orders.

We exploit a high-performing resistive-type trace oxygen sensor based on 2D high-mobility semiconducting Bi2O2Se nanoplates. Scanning tunneling microscopy combined with first-principle calculations confirms an amorphous Se atomic layer formed on the surface of 2D Bi2O2Se exposed to oxygen, which contributes to larger specific surface area and abundant active adsorption sites. Such 2D Bi2O2Se oxygen sensors have remarkable oxygen-adsorption induced variations of carrier density/mobility, and exhibit an ultrahigh sensitivity featuring minimum detection limit of 0.25 ppm, long-term stability, high durativity, and wide-range response to concentration up to 400 ppm at room temperature. 2D Bi2O2Se arrayed sensors integrated in parallel form are found to possess an oxygen detection minimum of sub-0.25 ppm ascribed to an enhanced signal-to-noise ratio. These advanced sensor characteristics involving ease integration show 2D Bi2O2Se is an ideal candidate for trace oxygen detection.

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III-V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO2) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi2SeO5) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi2O2Se. Using this native oxide dielectric, high-performance Bi2O2Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (similar to 21) of Bi2SeO5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO2. The Bi2SeO5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi2O2Se semiconductor almost unchanged.

Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond twofold and fourfold degenerate Weyl and Dirac fermions, threefold, sixfold, and eightfold symmetry protected degeneracies have been predicted. However they remain challenging to realize in solid state materials. Here the charge density wave compound TaTe4 is proposed to hold eightfold fermionic excitation and Dirac point in energy bands. High quality TaTe4 single crystals are prepared, where the charge density wave is revealed by directly imaging the atomic structure and a pseudogap of about 45 meV on the surface. Shubnikov-de Haas oscillations of TaTe4 are consistent with band structure calculation. Scanning tunneling microscopy/spectroscopy reveals atomic step edge states on the surface of TaTe4. This work uncovers that the charge density wave is able to induce new topological phases and sheds new light on the novel excitations in condensed matter materials.

We study a two-dimensional heterostructure comprised of a monolayer of the magnetic insulator chromium triiodide (CrI3) on a superconducting lead (Pb) substrate. Through first-principles computation and a tightbinding model, we demonstrate that charge transfer from the Pb substrate dopes the CrI3 into an effective half-metal, allowing for the onset of a gapless topological superconductivity phase via the proximity effect. This phase, in which there exists a superconducting gap only in part of the Fermi surface, is shown to occur generically in two-dimensional (2D) half-metal-superconductor heterostructures which lack twofold in-plane rotational symmetry. However, a sufficiently large proximity-induced pairing amplitude can bring such a system into a fully gapped topological superconducting (TSC) phase. As such, these results are expected to better define the optimal 2D component materials for future proposed TSC heterostructures.

We demonstrate an anomalous spin-orbit torque induced by the broken magnetic symmetry in the antiferromagnet IrMn. We study the magnetic structure of three phases of IrMn thin films using neutron diffraction technique. The magnetic mirror symmetry M' is broken laterally in both L1(0)-IrMn and L1(2)-IrMn3 but not gamma-IrMn3. We observe an out-of-plane dampinglike spin-orbit torque in both L1(0)-IrMn/permalloy and L1(2)-IrMn3/permalloy bilayers but not in gamma-IrMn3/permalloy. This is consistent with both the symmetry analysis on the effects of a broken M' on spin-orbit torque and the theoretical predictions of the spin Hall effect and the Rashba-Edelstein effect. In addition, the measured spin-orbit torque efficiencies are 0.61 +/- 0.01, 1.01 +/- 0.03, and 0.80 +/- 0.01 for the L1(0), L1(2), and gamma phases, respectively. Our work highlights the critical roles of the magnetic asymmetry in spin-orbit torque generation.

Bi2TeI is identified as a dual topological insulator. It is a weak topological insulator with metallic states at the (010) surfaces and a topological crystalline insulator at the (001) surfaces.Dual topological materials are unique topological phases that host coexisting surface states of different topological nature on the same or on different material facets. Here, we show that Bi2TeI is a dual topological insulator. It exhibits band inversions at two time reversal symmetry points of the bulk band, which classify it as a weak topological insulator with metallic states on its 'side' surfaces. The mirror symmetry of the crystal structure concurrently classifies it as a topological crystalline insulator. We investigated Bi2TeI spectroscopically to show the existence of both two-dimensional Dirac surface states, which are susceptible to mirror symmetry breaking, and one-dimensional channels that reside along the step edges. Their mutual coexistence on the step edge, where both facets join, is facilitated by momentum and energy segregation. Our observation of a dual topological insulator should stimulate investigations of other dual topology classes with distinct surface manifestations coexisting at their boundaries.

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. A strong exchange bias of similar to 40 meV originates from the long Cr-e(g) orbital tails that hybridize strongly with Te p orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Moreover, the high-Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

The growing diversity of topological classes leads to ambiguity between classes that share similar boundary phenomenology. This is the status of bulk bismuth. Recent studies have classified it as either a strong or a higher-order topological insulator, both of which host helical modes on their boundaries. We resolve the topological classification of bismuth by spectroscopically mapping the response of its boundary modes to a screw-dislocation. We find that the one-dimensional mode, on step-edges, extends over a wide energy range and does not open a gap near the screw-dislocations. This signifies that this mode binds to the screw-dislocation, as expected for a material with nonzero weak indices. We argue that the small energy gap, at the time reversal invariant momentum L, positions bismuth within the critical region of a topological phase transition between a higher-order topological insulator and a strong topological insulator with nonzero weak indices.

Bulk-surface correspondence in Weyl semimetals ensures the formation of topological " Fermi arc" surface bands whose existence is guaranteed by bulk Weyl nodes. By investigating three distinct surface terminations of the ferromagnetic semimetal Co3Sn2S2, we verify spectroscopically its classification as a time-reversal symmetry-broken Weyl semimetal. We show that the distinct surface potentials imposed by three different terminations modify the Fermi-arc contour and Weyl node connectivity. On the tin (Sn) surface, we identify intra-Brillouin zone Weyl node connectivity of Fermi arcs, whereas on cobalt (Co) termination, the connectivity is across adjacent Brillouin zones. On the sulfur (S) surface, Fermi arcs overlap with nontopological bulk and surface states. We thus resolve both topologically protected and nonprotected electronic properties of a Weyl semimetal.

The bulk photovoltaic effect (BPVE) rectifies light into the dc current in a single-phase material and attracts the interest to design high-efficiency solar cells beyond the pn junction paradigm. Because it is a hot electron effect, the BPVE surpasses the thermodynamic Shockley-Queisser limit to generate above-band-gap photovoltage. While the guiding principle for BPVE materials is to break the crystal centrosymmetry, here we propose a magnetic photogalvanic effect (MPGE) that introduces the magnetism as a key ingredient and induces a giant BPVE. The MPGE emerges from the magnetism-induced asymmetry of the carrier velocity in the band structure. We demonstrate the MPGE in a layered magnetic insulator CrI3, with much larger photoconductivity than any previously reported results. The photo-current can be reversed and switched by controllable magnetic transitions. Our work paves a pathway to search for magnetic photovoltaic materials and to design switchable devices combining magnetic, electronic, and optical functionalities.

Spin-orbit torque (SOT) offers promising approaches to developing energy-efficient memory devices by electric switching of magnetization. Compared to other SOT materials, metallic antiferromagnet (AFM) potentially allows the control of SOT through its magnetic structure. Here, combining the results from neutron diffraction and spin-torque ferromagnetic resonance experiments, we show that the magnetic structure of epitaxially grown L1(0)-IrMn (a collinear AFM) is distinct from the widely presumed bulk one. It consists of twin domains, with the spin axes orienting toward [111] and [-111], respectively. This unconventional magnetic structure is responsible for much larger SOT efficiencies up to 0.60 +/- 0.04, compared to 0.083 +/- 0.002 for the polycrystalline IrMn. Furthermore, we reveal that this magnetic structure induces a large isotropic bulk contribution and a comparable anisotropic interfacial contribution to the SOT efficiency. Our findings shed light on the critical roles of bulk and interfacial antiferromagnetism to SOT generated by metallic AFM.

In principle the stacking of different two-dimensional (2D) materials allows the construction of 3D systems with entirely new electronic properties. Here we propose to realize topological crystalline insulators (TCI) protected by mirror symmetry in heterostructures consisting of graphene monolayers separated by two-dimensional polar spacers. The polar spacers are arranged such that they can induce an alternating doping and/or spin-orbit coupling in the adjacent graphene sheets. When spin-orbit coupling dominates, the nontrivial phase arises due to the fact that each graphene sheet enters a quantum spin-Hall phase. Instead, when the graphene layers are electron and hole doped in an alternating fashion, a uniform magnetic field leads to the formation of quantum Hall phases with opposite Chern numbers. It thus has the remarkable property that unlike previously proposed and observed TCIs, the nontrivial topology is generated by an external time-reversal breaking perturbation.

We studied the nonlinear electric response in WTe2 and MoTe2 monolayers. When the inversion symmetry is breaking but the the time-reversal symmetry is preserved, a second-order Hall effect called the nonlinear anomalous Hall effect (NLAHE) emerges owing to the nonzero Berry curvature on the nonequilibrium Fermi surface. We reveal a strong NLAHE with a Hall-voltage that is quadratic with respect to the longitudinal current. The optimal current direction is normal to the mirror plane in these two-dimensional (2D) materials. The NLAHE can be sensitively tuned by an out-of-plane electric field, which induces a transition from a topological insulator to a normal insulator. Crossing the critical transition point, the magnitude of the NLAHE increases, and its sign is reversed. Our work paves the way to discover exotic nonlinear phenomena in inversion-symmetry-breaking 2D materials.

The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by spin-orbit coupling. Here, we identify an alternative mechanism to realize the intrinsic SHE through a noncollinear magnetic structure that breaks the spin rotation symmetry. No spin-orbit coupling is needed even when the scalar spin chirality vanishes, different from the case of the topological Hall effect and topological SHE reported previously. In known noncollinear antiferromagnetic compounds Mn3X (X = Ga, Ge, and Sn), for example, we indeed obtain large spin Hall conductivities based on ab initio calculations.

Using first-principles calculations, we investigate the photogalvanic effect in the Weyl semimetal material TaAs. We find colossal photocurrents caused by the Weyl points in the band structure in a wide range of laser frequency. Our calculations reveal that the photocurrent is predominantly contributed by the three-band transition from the occupied Weyl band to the empty Weyl band via an intermediate band away from the Weyl cone, for excitations both by linearly and circularly polarized light. Therefore, it is essential to sum over all three-band transitions by considering a full set of Bloch bands (both Weyl bands and trivial bands) in the first-principles band structure while it does not suffice to only consider the two-band direct transition within a Weyl cone. The calculated photoconductivities are well consistent with recent experiment measurements. Our work provides a first-principles calculation on nonlinear optical phenomena of Weyl semimetals and provides a deeper understanding of the photogalvanic effects in complexed materials.

Recently, an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi2O2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons get spontaneously ionized from donor sites (e.g., Se vacancies) without involving the thermal activation, different from the donor ionization in conventional semiconductors. Consequently, the resistance decreases as reducing the temperature as observed in our measurement, which is similar to a metal but contrasts to a usual semiconductor. Furthermore, the electron conduction channels locate spatially away from ionized donor defects (Se vacancies) in different van der Waals layers. Such a spatial separation can strongly suppress the scattering caused by donor sites and subsequently increase the electron mobility, especially at the low temperature. We call this high-mobility mechanism self-modulation doping, i.e., the modulation doping spontaneously happening in a single-phase material without requiring a heterojunction. Our work paves a way to design high-mobility semiconductors with layered materials.

Three-dimensional topological semi-metals carry quasiparticle states that mimic massless relativistic Dirac fermions, elusive particles that have never been observed in nature. As they appear in the solid body, they are not bound to the usual symmetries of space-time and thus new types of fermionic excitations that explicitly violate Lorentz-invariance have been proposed, the so-called type-II Dirac fermions. We investigate the electronic spectrum of the transition-metal dichalcogenide PtSe2 by means of quantum oscillation measurements in fields up to 65 T. The observed Fermi surfaces agree well with the expectations from band structure calculations, that recently predicted a type-II Dirac node to occur in this material. A hole- and an electron-like Fermi surface dominate the semi-metal at the Fermi level. The quasiparticle mass is significantly enhanced over the bare band mass value, likely by phonon renormalization. Our work is consistent with the existence of type-II Dirac nodes in PtSe2, yet the Dirac node is too far below the Fermi level to support free Dirac-fermion excitations.

Recent interest in topological semimetals has led to the proposal ofmany newtopological phases that can be realized in real materials. Next to Dirac and Weyl systems, these include more exotic phases based on manifold band degeneracies in the bulk electronic structure. The exotic states in topological semimetals are usually protected by some sort of crystal symmetry, and the introduction of magnetic order can influence these states by breaking time-reversal symmetry. We show that we can realize a rich variety of different topological semimetal states in a single material, CeSbTe. This compound can exhibit different types ofmagnetic order that can be accessed easily by applying a small field. Therefore, it allows for tuning the electronic structure and can drive it through a manifold of topologically distinct phases, such as the first nonsymmorphic magnetic topological phase with an eightfold band crossing at a high-symmetry point. Our experimental results are backed by a full magnetic group theory analysis and ab initio calculations. This discovery introduces a realistic and promising platform for studying the interplay of magnetism and topology. We also show that we can generally expand the numbers of space groups that allow for high-order band degeneracies by introducing antiferromagnetic order.

Noncentrosymmetric metals are anticipated to exhibit a dc photocurrent in the nonlinear optical response caused by the Berry curvature dipole in momentum space. Weyl semimetals (WSMs) are expected to be excellent candidates for observing these nonlinear effects because they carry a large Berry curvature concentrated in small regions, i.e., near the Weyl points. We have implemented the semiclassical Berry curvature dipole formalism into an ab initio scheme and investigated the second-order nonlinear response for two representative groups of materials: the TaAs-family type-I WSMs and the MoTe2-family type-II WSMs. Both types of WSMs exhibited a Berry curvature dipole in which type-II Weyl points are usually superior to the type-I WSM because of the strong tilt. Corresponding nonlinear susceptibilities in several materials promise a nonlinear Hall effect in the dc field limit, which is within the experimentally detectable range.

Noncollinear antiferromagnets, such as Mn-3 Sn and Mn-3 Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transverse spin current, which has a distinct symmetry and origin from the conventional spin Hall effect. We illustrate the existence of the spin-polarized current and the transverse spin current by performing ab initio microscopic calculations and by analyzing the symmetry. We discuss possible applications of these novel spin currents, such as an antiferromagnetic metallic or tunneling junction.

Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHgX (X = As, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHgX guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the ``hourglass Fermion'' recently proposed. Our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.

The conservation laws, such as those of charge, energy and momentum, have a central role in physics. In some special cases, classical conservation laws are broken at the quantum level by quantum fluctuations, in which case the theory is said to have quantum anomalies(1). One of the most prominent examples is the chiral anomaly(2,3), which involves massless chiral fermions. These particles have their spin, or internal angular momentum, aligned either parallel or antiparallel with their linear momentum, labelled as left and right chirality, respectively. In three spatial dimensions, the chiral anomaly is the breakdown (as a result of externally applied parallel electric and magnetic fields(4)) of the classical conservation law that dictates that the number of massless fermions of each chirality are separately conserved. The current that measures the difference between left- and right-handed particles is called the axial current and is not conserved at the quantum level. In addition, an underlying curved space-time provides a distinct contribution to a chiral imbalance, an effect known as the mixed axial-gravitational anomaly(1), but this anomaly has yet to be confirmed experimentally. However, the presence of a mixed gauge-gravitational anomaly has recently been tied to thermoelectrical transport in a magnetic field(5,6), even in flat space-time, suggesting that such types of mixed anomaly could be experimentally probed in condensed matter systems known as Weyl semimetals(7). Here, using a temperature gradient, we observe experimentally a positive magneto-thermoelectric conductance in the Weyl semimetal niobium phosphide (NbP) for collinear temperature gradients and magnetic fields that vanishes in the ultra-quantum limit, when only a single Landau level is occupied. This observation is consistent with the presence of a mixed axial-gravitational anomaly, providing clear evidence for a theoretical concept that has so far eluded experimental detection.

We report superconductive iridium pnictides BaxIr4X12 (X = As and P) with a filled skutterudite structure, demonstrating that Ba filling dramatically alters their electronic properties and induces a nonmetal-to metal transition with increasing, the Ea content x. The highest superconducting transition temperatures are 4.8 and 5.6 K observed for BaxIr4As12 and BaxIr4P12, respectively. The superconductivity in BaxIr4X12 can be classified into the Bardeen-Cooper-Schrieffer type with intermediate coupling.

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research(1-9). However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present(10). Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of similar to 0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of > 20,000 cm(2) V-1 s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition(11) and at the LaAlO3-SrTiO3 interface(12), making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V-1 s(-1)), large current on/off ratios (> 10(6)) and near-ideal subthreshold swing values (similar to 65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

The search for highly efficient and low-cost catalysts is one of the main driving forces in catalytic chemistry. Current strategies for the catalyst design focus on increasing the number and activity of local catalytic sites, such as the edge sites of molybdenum disulfides in the hydrogen evolution reaction (HER). Here, the study proposes and demonstrates a different principle that goes beyond local site optimization by utilizing topological electronic states to spur catalytic activity. For HER, excellent catalysts have been found among the transition-metal monopnictidesNbP, TaP, NbAs, and TaAswhich are recently discovered to be topological Weyl semimetals. Here the study shows that the combination of robust topological surface states and large room temperature carrier mobility, both of which originate from bulk Dirac bands of the Weyl semimetal, is a recipe for high activity HER catalysts. This approach has the potential to go beyond graphene based composite photocatalysts where graphene simply provides a high mobility medium without any active catalytic sites that have been found in these topological materials. Thus, the work provides a guiding principle for the discovery of novel catalysts from the emerging field of topological materials.

The higher the energy of a particle is above equilibrium, the faster it relaxes because of the growing phase space of available electronic states it can interact with. In the relaxation process, phase coherence is lost, thus limiting high-energy quantum control and manipulation. In one-dimensional systems, high relaxation rates are expected to destabilize electronic quasiparticles. Here, we show that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves non-monotonically with energy such that above a certain threshold hot electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing, for the first time, the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Perot resonators. A remarkable agreement with a theoretical model reveals that the nonmonotonic behavior is driven by the unique manner in which one-dimensional hot electrons interact with the cold electrons occupying the Fermi sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

The class of topological semimetals comprises a large pool of compounds. Together they provide a wide platform to realize exotic quasiparticles, for example, Dirac, nodal-line Dirac, and Weyl fermions. In this Rapid Communication, we report the Berry phase, Fermi-surface topology, and anisotropic magnetoresistance of HfSiS which has recently been predicted to be a nodal-line semimetal. This compound contains a large carrier density, higher than most of the known semimetals. Massive amplitudes of de Haas-van Alphen and Shubnikov-de Haas oscillations up to 20 K in 7 T assist us in witnessing a nontrivial pi-Berry phase, which is a consequence of topological Dirac-type dispersion of bands originating from the hybridization of p(x) + p(y) and d(x2-y2) orbitals of square-net plane of Si and Hf atoms, respectively. Furthermore, we establish the three-dimensional Fermi surface which consists of very asymmetric water caltroplike electrons and barley seedlike hole pockets which account for the anisotropic magnetoresistance in HfSiS.

We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh and Pt) by ab initio band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn3X materials exhibit a noncollinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that Mn3Ga shows a large SHC of about 600 (h/e)(Omega cm)(-1). Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagnetic materials.

We present a quasiparticle interference study of clean and Mn surface-doped TaAs, a prototypical Weyl semimetal, to test the screening properties as well as the stability of Fermi arcs against Coulomb and magnetic scattering. Contrary to topological insulators, the impurities are effectively screened in Weyl semimetals. The adatoms significantly enhance the strength of the signal such that theoretical predictions on the potential impact of Fermi arcs can be unambiguously scrutinized. Our analysis reveals the existence of three extremely short, previously unknown scattering vectors. Comparison with theory traces them back to scattering events between large parallel segments of spin-split trivial states, strongly limiting their coherence. In sharp contrast to previous work [R. Batabyal et al., Sci. Adv. 2, e1600709 (2016)], where similar but weaker subtle modulations were interpreted as evidence of quasiparticle interference originating from Femi arcs, we can safely exclude this being the case. Overall, our results indicate that intra- as well as inter-Fermi arc scattering are strongly suppressed and may explain why-in spite of their complex multiband structure-transport measurements show signatures of topological states in Weyl monopnictides.

The rare-earth monopnictide LaBi exhibits exotic magneto-transport properties, including an extremely large and anisotropic magnetoresistance. Experimental evidence for topological surface states is still missing although band inversions have been postulated to induce a topological phase in LaBi. In this work, we have revealed the existence of surface states of LaBi through the observation of three Dirac cones: two coexist at the corners and one appears at the centre of the Brillouin zone, by employing angle-resolved photoemission spectroscopy in conjunction with ab initio calculations. The odd number of surface Dirac cones is a direct consequence of the odd number of band inversions in the bulk band structure, thereby proving that LaBi is a topological, compensated semimetal, which is equivalent to a time-reversal invariant topological insulator. Our findings provide insight into the topological surface states of LaBi's semi-metallicity and related magneto-transport properties.

Tantalum arsenide is a member of the noncentrosymmetric monopnictides, which are putative Weyl semimetals. In these materials, three-dimensional chiral massless quasiparticles, the so-called Weyl fermions, are predicted to induce novel quantum mechanical phenomena, such as the chiral anomaly and topological surface states. However, their chirality is only well defined if the Fermi level is close enough to the Weyl points that separate Fermi surface pockets of opposite chirality exist. In this Letter, we present the bulk Fermi surface topology of high quality single crystals of TaAs, as determined by angle-dependent Shubnikov-de Haas and de Haas-van Alphen measurements combined with ab initio band-structure calculations. Quantum oscillations originating from three different types of Fermi surface pockets were found in magnetization, magnetic torque, and magnetoresistance measurements performed in magnetic fields up to 14 T and temperatures down to 1.8 K. Of these Fermi pockets, two are pairs of topologically nontrivial electron pockets around the Weyl points and one is a trivial hole pocket. Unlike the other members of the noncentrosymmetric monopnictides, TaAs is the first Weyl semimetal candidate with the Fermi energy sufficiently close to both types of Weyl points to generate chiral quasiparticles at the Fermi surface.

Weyl semimetals are often considered the 3D-analogon of graphene or topological insulators. The evaluation of quantum oscillations in these systems remains challenging because there are often multiple conduction bands. We observe de Haas-van Alphen oscillations with several frequencies in a single crystal of the Weyl semimetal niobium phosphide. For each fundamental crystal axis, we can fit the raw data to a superposition of sinusoidal functions, which enables us to calculate the characteristic parameters of all individual bulk conduction bands using Fourier transform with an analysis of the temperature and magnetic field-dependent oscillation amplitude decay. Our experimental results indicate that the band structure consists of Dirac bands with low cyclotron mass, a non-trivial Berry phase and parabolic bands with a higher effective mass and trivial Berry phase.

Topological quantum materials represent a new class of matter with both exotic physical phenomena and novel application potentials. Many Heusler compounds, which exhibit rich emergent properties such as unusual magnetism, superconductivity and heavy fermion behaviour, have been predicted to host non-trivial topological electronic structures. The coexistence of topological order and other unusual properties makes Heusler materials ideal platform to search for new topological quantum phases (such as quantum anomalous Hall insulator and topological superconductor). By carrying out angle-resolved photoemission spectroscopy and ab initio calculations on rare-earth half-Heusler compounds LnPtBi (Ln = Lu, Y), we directly observe the unusual topological surface states on these materials, establishing them as first members with non-trivial topological electronic structure in this class of materials. Moreover, as LnPtBi compounds are non-centrosymmetric superconductors, our discovery further highlights them as promising candidates of topological superconductors.

There has been considerable interest in spin-orbit torques for the purpose of manipulating the magnetization of ferromagnetic elements for spintronic technologies. Spin-orbit torques are derived from spin currents created from charge currents in materials with significant spin-orbit coupling that propagate into an adjacent ferromagnetic material. A key challenge is to identify materials that exhibit large spin Hall angles, that is, efficient charge-to-spin current conversion. Using spin torque ferromagnetic resonance, we report the observation of a giant spin Hall angle theta(eff)(SH) of up to similar to 0.35 in (001)-oriented single-crystalline antiferromagnetic IrMn3 thin films, coupled to ferromagnetic permalloy layers, and theta(eff)(SH) that is about three times smaller in (111)-oriented films. For (001)-oriented samples, we show that the magnitude of theta(eff)(SH) can be significantly changed by manipulating the populations of various antiferromagnetic domains through perpendicular field annealing. We identify two distinct mechanisms that contribute to qeff SH: the first mechanism, which is facet-independent, arises from conventional bulk spin-dependent scattering within the IrMn3 layer, and the second intrinsic mechanism is derived from the unconventional antiferromagnetic structure of IrMn3. Using ab initio calculations, we show that the triangular magnetic structure of IrMn3 gives rise to a substantial intrinsic spin Hall conductivity that is much larger for the (001) than for the (111) orientation, consistent with our experimental findings.

The discovery of superconductivity in hafnium pentatelluride HfTe5 under high pressure is reported. Two structural phase transitions and metallization with superconductivity developing at around 5 GPa are observed. A maximal critical temperature of 4.8 K is attained at a pressure of 20 GPa, and superconductivity persists up to the maximum pressure of the study (42 GPa). The combination of electrical transport and crystal structure measurements as well as theoretical electronic structure calculations enables the construction of a phase diagram of HfTe5 under high pressure.

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface-state-like behavior in the magnetoresistance. The electrons responsible for this pseudo-two-dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle-dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (similar to 10(5)%).

We report on the pressure evolution of the Fermi surface topology of the Weyl semimetal NbP, probed by Shubnikov-de Haas oscillations in the magnetoresistance combined with ab initio calculations of the band structure. Although we observe a drastic effect on the amplitudes of the quantum oscillations, the frequencies only exhibit a weak pressure dependence up to 2.8 GPa. The pressure-induced variations in the oscillation frequencies are consistent with our band-structure calculations. Furthermore, we can relate the changes in the amplitudes to small modifications in the shape of the Fermi surface. Our findings show evidence of the stability of the electronic band structure of NbP and demonstrate the power of combining quantum-oscillation studies and band-structure calculations to investigate pressure effects on the Fermi surface topology in Weyl semimetals.

Using first-principles density-functional theory, we have investigated the electronic and magnetic properties of recently synthesized and characterized 5d double-perovskites Sr2BOsO6(B = Y, In, Sc). The electronic structure calculations show that in all compounds the Os5+ (5d(3)) site is the only magnetically active one, whereas Y3+, In3+, and Sc3+ remain in nonmagnetic states with Sc/Y and In featuring d(0) and d(10) electronic configurations, respectively. Our studies reveal the important role of closed-shell (d(10)) versus open-shell (d(0)) electronic configurations of the nonmagnetic sites in determining the overall magnetic exchange interactions. Although the magnetic Os5+ (5d(3)) site is the same in all compounds, the magnetic superexchange interactions mediated by nonmagnetic Y/In/Sc species are strongest for Sr2ScOsO6, weakest for Sr2InOsO6, and intermediate in the case of the Y (d(0)) due to different energy overlaps between Os-5d and Y/In/Sc-d states. This explains the experimentally observed substantial differences in the magnetic transition temperatures of these materials, despite an identical magnetic site and underlying magnetic ground state. Furthermore, short-range Os-Os exchange interactions are more prominent than long-range Os-Os interactions in these compounds, which contrasts with the behavior of other 3d-5d double perovskites.

The Weyl semimetal NbP was found to exhibit topological Fermi arcs and exotic magnetotransport properties. Here, we report on magnetic quantum-oscillation measurements on NbP and construct the three-dimensional Fermi surface with the help of band-structure calculations. We reveal a pair of spin-orbit-split electron pockets at the Fermi energy and a similar pair of hole pockets, all of which are strongly anisotropic. The Weyl points that are located in the k(z) approximate to pi/c plane are found to exist 5 meV above the Fermi energy. Therefore, we predict that the chiral anomaly effect can be realized in NbP by electron doping to drive the Fermi energy to the Weyl points.

We study the interaction effect in a three-dimensional Dirac semimetal and find that two competing orders, charge-density-wave orders and nematic orders, can be induced to gap the Dirac points. Applying a magnetic field can further induce an instability towards forming these ordered phases. The charge-density-wave phase is similar to that of aWeyl semimetal, while the nematic phase is unique for Dirac semimetals. Gapless zero modes are found in the vortex core formed by nematic order parameters, indicating the topological nature of nematic phases. The nematic phase can be observed experimentally using scanning tunneling microscopy.

Exotic and robust metallic surface states of topological insulators (TIs) have been expected to provide a promising platform for novel surface chemistry and catalysis. However, it is still not fully known how TIs affect the activity of catalysts. In this work, we study the effects of topological surface states (TSSs) on the activity of transition metal clusters (Au, Ag, Cu, Pt, and Pd), which are supported on a TI Bi2Se3 substrate. It was found the adsorption energy of oxygen on the supported catalysts can be always enhanced due to the TSSs. However, it does not necessarily mean an increase of the activity in catalytic oxidation reaction. Rather, the enhanced adsorption behavior in the presence of TSSs exhibits dual effects, determined by the intrinsic reactivity of these catalysts with oxygen. For the Au case, the activity of catalytic oxidation can be improved because the TSSs can enhance the dissociation rate of dioxygen. In contrast, a negative effect is found for the Pt and Pd clusters since the TSSs will suppress the desorption process of reaction products. We also found that the effect of TSSs on the activity of hydrogen evolution reaction (HER) is quite similar (i.e., the metals with original weak reactivity can gain a positive effect from TSSs). The present work can pave a way for more rational design and selection of catalysts when using TIs as substrates.

We studied the square-octagonal lattice of the transition metal dichalcogenide MX2 (with M =Mo,W; X = S, Se, and Te), as an isomer of the normal hexagonal compound of MX2. By band-structure calculations, we observe the graphene-like Dirac band structure in a rectangular lattice of MX2 with nonsymmorphic space group symmetry. Two bands with van Hove singularity points cross each at the Fermi energy, leading to two Dirac cones that locate at opposite momenta. Spin-orbit coupling can open a gap at these Dirac points, inside which gapless topological edge states exists as the quantum spin Hall (QSH) effect, the 2D topological insulator.

The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene's small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. The encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.

Three-dimensional (3D) topological Weyl semimetals (TWSs) represent a state of quantum matter with unusual electronic structures that resemble both a '3D graphene' and a topological insulator. Their electronic structure displays pairs of Weyl points (through which the electronic bands disperse linearly along all three momentum directions) connected by topological surface states, forming a unique arc-like Fermi surface (FS). Each Weyl point is chiral and contains half the degrees of freedom of a Dirac point, and can be viewed as a magnetic monopole in momentum space. By performing angle-resolved photoemission spectroscopy on the non-centrosymmetric compound TaAs, here we report its complete band structure, including the unique Fermi-arc FS and linear bulk band dispersion across the Weyl points, in agreement with the theoretical calculations1,2. This discovery not only confirms TaAs as a 3DTWS, but also provides an ideal platform for realizing exotic physical phenomena (for example, negative magnetoresistance, chiral magnetic effects and the quantum anomalous Hall effect) which may also lead to novel future applications.

Graphene is the first model system of two-dimensional topological insulator (TI), also known as quantum spin Hall (QSH) insulator. The QSH effect in graphene, however, has eluded direct experimental detection because of its extremely small energy gap due to the weak spin-orbit coupling. Here we predict by ab initio calculations a giant (three orders of magnitude) proximity induced enhancement of the TI energy gap in the graphene layer that is sandwiched between thin slabs of Sb2Te3 (or MoTe2). This gap (1.5 meV) is accessible by existing experimental techniques, and it can be further enhanced by tuning the interlayer distance via compression. We reveal by a tight-binding study that the QSH state in graphene is driven by the Kane-Mele interaction in competition with Kekule deformation and symmetry breaking. The present work identifies a new family of graphene-based TIs with an observable and controllable bulk energy gap in the graphene layer, thus opening a new avenue for direct verification and exploration of the long-sought QSH effect in graphene. (C) 2015 Elsevier Ltd. All rights reserved.

Recent theoretical studies employing density-functional theory have predicted BaBiO3 (when doped with electrons) and YBiO3 to become a topological insulator (TI) with a large topological gap (similar to 0.7 eV). This, together with the natural stability against surface oxidation, makes the Bismuth-Oxide family of special interest for possible applications in quantum information and spintronics. The central question, we study here, is whether the hole-doped Bismuth Oxides, i.e. Ba1-xKxBiO3 and BaPb1-xBixO3, which are "high-Tc" bulk superconducting near 30 K, additionally display in the further vicinity of their Fermi energy E-F a topological gap with a Dirac-type of topological surface state. Our electronic structure calculations predict the K-doped family to emerge as a TI, with a topological gap above E-F. Thus, these compounds can become superconductors with hole-doping and potential TIs with additional electron doping. Furthermore, we predict the Bismuth-Oxide family to contain an additional Dirac cone below E-F for further hole doping, which manifests these systems to be candidates for both electron-and hole-doped topological insulators.

Local environments and valence electron counts primarily determine the electronic states and physical properties of transition-metal complexes. For example, square-planar coordination geometries found in transition-metal oxometalates such as cuprates are usually associated with the d(8) or d(9) electron configuration. In this work, we address an unusual square-planar single oxoanionic [IrO4](4-) species, as observed in Na4IrO4 in which IrIV has a d5 configuration, and characterize the chemical bonding through experiments and by ab initio calculations. We find that the IrIV center in groundstate Na4IrO4 has square-planar coordination geometry because of the weak Coulomb repulsion of the Ir-5d electrons. In contrast, in its 3d counterpart Na4CoO4, the CoIV center is tetrahedrally coordinated because of strong electron correlation. Na4IrO4 may thus serve as a simple yet important example to study the ramifications of Hubbard-type Coulomb interactions on local geometries.

We have performed ab initio band-structure calculations on more than 2000 half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gaps of 0.20 and 0.19 eV, respectively, different from the zero band-gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magnetoelectric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin texture in the upper Dirac cone, which distinguishes them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.

Topological insulators are known for their metallic surface states, a result of strong spin-orbit coupling, that exhibit unique surface transport phenomenon. However, these surface transport phenomena are buried in the presence of metallic bulk conduction. We synthesized very high quality Bi2Te2Se single crystals by using a modified Bridgman method that possess high bulk resistivity of >20 Omega cm below 20 K, whereas the bulk is mostly inactive and surface transport dominates. The temperature dependence of resistivity follows an activation law like a gap semiconductor in temperature range 20-300 K. To extract the surface transport from that of the bulk, we designed a special measurement geometry to measure the resistance and found that single-crystal Bi2Te2Se exhibits a crossover from bulk to surface conduction at 20 K. Simultaneously, the material also shows strong evidence of weak antilocalization in magnetotransport owing to the protection against scattering by conducting surface states. This simple geometry facilitates finding evidence of surface transport in topological insulators, which are promising materials for future spintronic applications.

We predict a family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X = Cl, Br, and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity-induced topological states. First-principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer a unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers ideas for innovative device designs.

The topological surface states of mercury telluride (HgTe) are studied by ab initio calculations assuming different strains and surface terminations. For the Te-terminated surface, a single Dirac cone exists at the Gamma-point. The Dirac point shifts up from the bulk valence bands into the energy gap when the substrate-induced strain increases. At the experimental strain value (0.3%), the Dirac point lies slightly below the bulk valence band maximum. A left-handed spin texture was observed in the upper Dirac cone, similar to that of the Bi2Se3-type topological insulator. For the Hg-terminated surface, three Dirac cones appear at three time-reversal-invariant momenta, excluding the Gamma-point, with non-trivial spin textures. Copyright (C) EPLA, 2014

Using density-functional theory calculations, we investigated the electronic structure and magnetic exchange interactions of the ordered 3d-5d double perovskite Sr2FeOsO6, which has recently drawn attention for interesting antiferromagnetic transitions. Our study reveals the vital role played by long-range magnetic exchange interactions in this compound. The competition between the ferromagnetic nearest-neighbor Os-O-Fe interaction and antiferromagnetic next-nearest-neighbor Os-O-Fe-O-Os interaction induces strong frustration in this system, which explains the lattice distortion and magnetic phase transitions observed in experiments.

Magnetic properties and spin dynamics have been studied for the structurally ordered double perovskite Sr2CoOsO6. Neutron diffraction, muon-spin relaxation, and ac-susceptibility measurements reveal two antiferromagnetic (AFM) phases on cooling from room temperature down to 2 K. In the first AFM phase, with transition temperature T-N1 = 108 K, cobalt (3d(7), S = 3/2) and osmium (5d(2), S = 1) moments fluctuate dynamically, while their average effective moments undergo long-range order. In the second AFM phase below T-N2 = 67 K, cobalt moments first become frozen and induce a noncollinear spin-canted AFM state, while dynamically fluctuating osmium moments are later frozen into a randomly canted state at T approximate to 5 K. Ab initio calculations indicate that the effective exchange coupling between cobalt and osmium sites is rather weak, so that cobalt and osmium sublattices exhibit different ground states and spin dynamics, making Sr2CoOsO6 distinct from previously reported double-perovskite compounds.

Topological insulators are a new class of quantum materials that are characterized by robust topological surface states (TSSs) inside the bulk insulating gap(1,2), which hold great potential for applications in quantum information and spintronics as well as thermoelectrics. One major obstacle is the relatively small size of the bulk bandgap, which is typically around 0.3 eV for the known topological insulator materials (ref. 3 and references therein). Here we demonstrate through ab initio calculations that a known superconductor BaBiO3 (BBO) with a T-c of nearly 30 K (refs 4,5) emerges as a topological insulator in the electron-doped region. BBO exhibits a large topological energy gap of 0.7 eV, inside which a Dirac type of TSSs exists. As the first oxide topological insulator, BBO is naturally stable against surface oxidization and degradation, distinct from chalcogenide topological insulators(6-8). An extra advantage of BBO lies in its ability to serve as an interface between TSSs and superconductors to realize Majorana fermions for future applications in quantum computation(9).

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23-0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.

The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Gamma point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

We investigate the structural stability and magnetic properties of the cubic, tetragonal and hexagonal phases of Mn(3)Z (Z = Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn3Ga and Mn3Ge behave differently from Mn3Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations for these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

In Dirac materials, like graphene or topological insulators, massless pseudorelativistic electrons promise new, very fast electronic devices by utilizing the partial suppression of backscattering. However, the semimetal nature of graphene makes the realization of practical field effect transistors difficult, due to small on-off current ratios. Here, we propose a new concept, based on Dirac states inside the conduction (or valence) band of a lightly doped wide band gap semiconductor. With the application of a gate voltage, the Dirac states become populated; that is, the Fermi level is switched between the "classical" high-resistivity semiconducting and the relativistic high-mobility metallic range. We demonstrate by theoretical calculations that such a transition can be realized, for example, in thin anatase nanowires, which have been synthesized before. Ta-doped anatase nanowires offer an excellent possibility to build field effect transistors with high speed and good on-off ratio. Guidelines for finding similar "Dirac semiconductors" are provided.

Although topological surface states are known to be robust against nonmagnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to surface defects. Taking Bi2Se3 as an example, we demonstrate that Se vacancies modify the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to the second quintuple layer and get separated from the vacancies. We simulated scanning tunnelling microscopy images to distinguish surfaces with Se and Bi terminations. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Recently, topological insulator materials have been theoretically predicted and experimentally observed in both 2D and 3D systems. We first review the basic models and physical properties of topological insulators, using HgTe and Bi2Se3 as prime examples. We then give a comprehensive survey of topological insulators which have been predicted so far, and discuss the current experimental status.

We propose new topological insulators in cerium-filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds, CeOs4As12 and CeOs4Sb12, are zero gap materials with band inversions between Os-d and Ce-f orbitals, similar to HgTe. Both compounds are predicted to become topological Kondo insulators at low temperatures, which are Kondo insulators in the bulk but with robust Dirac surface states on the boundary. Furthermore, this family of topological insulators has more unique features. Due to similar lattice parameters there will be a good proximity effect with other superconducting FS compounds, which may realize Majorana fermions. Additionally, the experimentally observed antiferromagnetic phase of CeOs4Sb12 at very low temperature provides a way to realize the massive Dirac fermion with topological magnetoelectric effects.

Due to the proximity to an embedding medium with low dielectric constant (e.g., oxides), semiconductor nanowires have higher impurity ionization energy than their bulk counterparts, resulting lower. free carrier density. Using ab initio calculations within density functional theory, we propose a way to reduce the ionization energy in nanowires by fabricating a special cross section with appropriate engineering of doping and an applied gate voltage. We demonstrate on a phosphorus-doped silicon nanowire that the ionization energy can be effectively tuned and the impurity backscattering can also be reduced. For instance, even without special engineering of doping, the free carrier density may increase by 40% in a Silicon nanowire with 15 nm diameter and special cross section. Our proposal has profound implications to fabricate nanowire devices With high carrier density.

Our first-principles calculations indicate the possibility of preparing spin-polarized scanning tunneling microscopy (SP-STM) probes from Fe-doped capped carbon nanotubes (CNTs). The structural stability, magnetic moment, and electronic property of hybrid systems are found to depend on the Fe adsorption site, which is attributed to the hybridization between Fe 3d and C 2p orbitals. The CNTs with Fe atoms adsorbed at the tip-top are demonstrated to be promising candidates for the SP-STM probe, with a high spin polarization leading to a completely spin-polarized current at lower voltages. In contrast, the CNTs encapsulating Fe atom are basically nonmagnetic, and thus useless for the SP-STM probe application in nature.

Scattering potentials for pi* electrons at Si-Ge and Sn-Ge dimers on a Ge(001) surface are studied by scanning tunneling microscopy and ab initio calculations. Phase-shift analysis of standing waves in dl/dV images reveals that Si and Sn atoms located in the conduction path of pi* electrons form potentials with the sign opposite to each other. Density-functional calculations and simple calculations based on the nearly-free-electron model explain the observed potential structures. These results are qualitatively understood by relative p-orbital energy of the Si, Sn, and Ge atoms.