Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires

We have suggested a method for growth of GaAs and InAs nanowires with a relatively clean wurtzite structure clean of stacking faults, within the well-established gold assisted vapor-liquid-solid growth in a molecular beam epitaxy system.  The method is based on pursuing the result which has been shown theoretically and proven experimentally, showing that nanowires with a small diameter (~10 nm) are bound to adopt a pure wurtzite structure and are observed to shift from axial to lateral growth mode once they exceed a certain length reflected by the mean migration length of group III atoms along the side walls on to the growth supply at the gold droplet. This procedure obviously results in the so-called pencil shape morphology of the nanowires.