Publications

The integration of functional proteins into solid-state electronic devices remains a central challenge in molecular bioelectronics due to the fragile nature of protein structures and their complex charge-transport behavior. Here, we present a robust crosswire evaporated top-contact device based on bacteriorhodopsin (bR) single-bilayers (SBL), configured as Au/Cys/bR(SBL)/eC/Au (simplified as Au/bR/eC). The evaporated carbon (eC) top electrode forms a conformal, non-invasive contact that suppresses filament formation and ensures electrical integrity across the crosswire intersecting area (≈200 µm²). Structural and spectroscopic analyses confirm that the solid-state bR films retain the native absorption spectrum and exhibit functional photocycle activity after electrode deposition, indicating that their native conformation is not significantly altered. Remarkably, electron transport (ETp) through the ≈9 nm bR-SBL junctions is temperature-independent within 300 K10 K, excluding thermally activated hopping, while the length is incompatible with coherent tunneling. Under green illumination, the junctions exhibit a reversible, photo-induced current enhancement (J_green/J_dark ≈ 2), ascribed to light-driven conformational changes rather than direct photoexcitation. The Au/bR/eC architecture thus establishes a thermally non-activated, conformationally mediated transport mechanism via a stable, cryo-compatible solid-state protein junction. This work provides a scalable platform for integrating light-responsive biomolecules into future bio-optoelectronic and neuromorphic devices.

Quasi-2D halide perovskites are chemically synthesized realizations of quantum well stacks with giant exciton oscillator strengths, tunable emission spectra, and very large exciton binding energies. While these features render quasi-2D halide perovskites a promising platform for room-temperature polaritonics, bosonic condensation and polariton lasing in quasi-2D perovskites have so far remained elusive at ambient conditions. Here, we demonstrate room-temperature cavity exciton-polariton condensation in mechanically exfoliated crystals of the quasi-2D Ruddlesden-Popper iodide perovskite (BA)₂(MA)₂Pb₃I₁₀ in an open optical microcavity. We observe a polariton condensation threshold of 0.41 µJ cm⁻² per pulse and detect a strong non-linear response. Interferometric measurements confirm the spontaneous emergence of spatial coherence across the condensate with an associated first-order autocorrelation reaching 0.6 with 1 ps coherence time and an effective de Broglie wavelength of 13 µm. Our results lay the foundation for a new class of room-temperature polariton lasers based on quasi-2D halide perovskites with great potential for hetero-integration with other van-der-Waals materials and combination with photonic crystals or waveguides.

Photovoltaic (PV) technology is crucial for the transition to a carbon-neutral and sustainable society. In this Review, we provide a comprehensive overview of PV materials and technologies, including mechanisms that limit PV solar-cell and module efficiencies. First, we introduce the PV effect and efficiency losses within the framework of the ShockleyQueisser model for solar-to-electrical power conversion. However, all PV technologies fall short of these idealizations in various aspects, from incomplete sunlight absorption to the loss of photocurrent and photovoltage caused by the recombination of photogenerated charge carriers in the cells. Approaching the efficiency limits of PV technology requires material innovations and device designs that minimize these losses. Solar-cell research and development presents several solutions to these problems that are intimately related to the properties of the specific PV materials. To increase efficiencies beyond the ShockleyQueisser limit (around 33%) for a single junction, research has focused on producing multi-junction solar cells. Although these cells do provide higher efficiencies, there are differences in performance between individual cells and full modules in single-junction technologies when integrated into multi-junction configurations, highlighting the challenges in moving from laboratory experiments to commercial products.

The remarkable ability of natural proteins to conduct electricity in the dry state over long distances remains largely inexplicable despite intensive research. In some cases, a (weakly) exponential length-attenuation, as in off-resonant tunneling transport, extends to thicknesses even beyond 10 nm. This report deals with such charge transport characteristics observed in self-assembled multilayers of the protein bacteriorhodopsin (bR). ≈7.5 to 15.5 nm thick bR layers are prepared on conductive titanium nitride (TiN) substrates using aminohexylphosphonic acid and poly-diallyl-dimethylammonium electrostatic linkers. Using conical eutectic gallium-indium top contacts, an intriguing, mono-exponential conductance attenuation as a function of the bR layer thickness with a small attenuation coefficient β ≈ 0.8 nm⁻¹ is measured at zero bias. Variable-temperature measurements using evaporated Ti/Au top contacts yield effective energy barriers of ≈100 meV from fitting the data to tunneling, hopping, and carrier cascade transport models. The observed temperature-dependence is assigned to the protein-electrode interfaces. The transport length and temperature dependence of the current densities are consistent with tunneling through the proteinprotein, and protein-electrode interfaces, respectively. Importantly, the results call for new theoretical approaches to find the microscopic mechanism behind the remarkably efficient, long-range electron transport within bR.

השימוש העולמי במימן כדלק חליפי, שיכול לתרום לצמצום פליטות גזי חממה, מתרחב במהירות ומאפשר הפקת תועלת ויתרונות חשובים למשק האנרגיה ולסביבה. על ישראל להשתלב במגמה זו, לקבל עליה תפקיד מוביל בקידום התחום ולהביא לפיתוחו ולשילובו של השימוש במימן ירוק, המופק באמצעות אנרגיית שמש ואלקטרוליזת מים. הוועדה שמינתה האקדמיה הלאומית הישראלית למדעים לבחינת נושא האקלים בישראל קוראת לתמיכה במחקר ופיתוח אקדמי ויישומי שיקדם את הידע בנושא היכולת והתנאים ליישום "כלכלת מימן", ירבה את היתרונות הכלכליים למשק האנרגיה בארץ, ויקדם את תרומת המחקר האקדמי בישראל למאבק במשבר האקלים בעולם. הוועדה ממליצה במיוחד על הקמת "פארקים לשמשמימן" שיהיו תשתית רחבה לחיבור אנרגיית השמש כמקור עיקרי לאנרגיה עם הפקת מימן כפתרון מיטבי לאגירת אנרגיה. הפארקים ישרתו את התעשיות, את מוסדות המחקר וגורמים נוספים בעלי עניין בארץ ובעולם, ויהוו בסיס לחיבור בין הטכנולוגיות השונות עבור צרכנים ויעדי אנרגיה מגוונים. הוועדה ממליצה במיוחד על ניצול השילוב הייחודי לישראל של הפוטנציאל הרב להפקת אנרגיית שמש עם זמינותם של מים מותפלים, שיש להם יתרונות בהפקת מימן ושדרושים בכמויות ניכרות להפקתו. (מתוך המאמר)

Photosystem I (PSI) is a photosynthetic protein which evolved to efficiently transfer electrons through the thylakoid membrane. This remarkable process attracted the attention of the biomolecular electronics community, which aims to study and understand the underlying electronic transport through these proteins by contacting ensembles of PSI with solid-state metallic contacts. This paper extends published work of immobilizing monolayers of PSI with a specific orientation, by using organophosphonate self-assembled molecules with hydrophilic heads on ultra-flat titanium nitride. Electrical measurements carried out with eutectic GaIn top contacts showed current rectification ratios of up to 200. The previously proposed rectification mechanism, relying on the protein's internal electric dipole, was inquired by measuring shifts in the work function. Our straightforward bottom-up fabrication method may allow for further experimental studies on PSI molecules, such as embedding them in solid-state, transparent top contact schemes for optoelectronic measurements.

The term defect tolerance (DT) is used often to rationalize the exceptional optoelectronic properties of halide perovskites (HaPs) and their devices. Even though DT lacked direct experimental evidence, it became a "fact" in the field. DT in semiconductors implies that structural defects do not translate to electrical and optical effects (e.g., due to charge trapping), associated with such defects. We present pioneering direct experimental evidence for DT in Pb-HaPs by comparing the structural quality of 2-dimensional (2D), 2D-3D, and 3D Pb-iodide HaP crystals with their optoelectronic characteristics using high-sensitivity methods. Importantly, we get information from the materials' bulk because we sample at least a few hundred nanometers, up to several micrometers, from the sample's surface, which allows for assessing intrinsic bulk (and not only surface-) properties of HaPs. The results point to DT in 3D, 2D-3D, and 2D Pb-HaPs. Overall, our data provide an experimental basis to rationalize DT in Pb-HaPs. These experiments and findings will help the search for and design of materials with real DT.

A key conundrum of biomolecular electronics is efficient electron transport (ETp) through solid-state junctions up to 10 nm, often without temperature activation. Such behavior challenges known charge transport mechanisms, especially via nonconjugated molecules such as proteins. Single-step, coherent quantum-mechanical tunneling proposed for ETp across small protein, 2-3 nm wide junctions, but it is problematic for larger proteins. Here we exploit the ability of bacteriorhodopsin (bR), a well-studied, 4-5 nm long membrane protein, to assemble into well-defined single and multiple bilayers, from ∼9 to 60 nm thick, to investigate ETp limits as a function of junction width. To ensure sufficient signal/noise, we use large area (∼10^-3 cm²) Au-protein-Si junctions. Photoemission spectra indicate a wide energy separation between electrode Fermi and the nearest protein-energy levels, as expected for a polymer of mostly saturated components. Junction currents decreased exponentially with increasing junction width, with uniquely low length-decay constants (0.05-0.5 nm^-1). Remarkably, even for the widest junctions, currents are nearly temperature-independent, completely so below 160 K. While, among other things, the lack of temperature-dependence excludes, hopping as a plausible mechanism, coherent quantum-mechanical tunneling over 60 nm is physically implausible. The results may be understood if ETp is limited by injection into one of the contacts, followed by more efficient charge propagation across the protein. Still, the electrostatics of the protein films further limit the number of charge carriers injected into the protein film. How electron transport across dozens of nanometers of protein layers is more efficient than injection defines a riddle, requiring further study.

The class of materials termed halide perovskites has experienced a meteoric rise in popularity due to their potential for photovoltaic and related applications, rivaling the well-established silicon devices within a few short years of development. These materials are characterized by several intriguing properties, among them their mechanical behavior. The study of their response to stress is essential for proper device development, while being of fundamental scientific interest in its own right. In this perspective, we highlight the key concerns surrounding this topic, critically analyzing the measurement techniques and considering the challenges in the current level of understanding.

Two-dimensional (2D) halide perovskites, HaPs, can provide chemical stability to three-dimensional (3D) HaP surfaces, protecting them from exposure to ambient species and from reacting with contacting layers. Both actions occur with 2D HaPs, with the general stoichiometry R₂PbI₄ (R: long or bulky organic amine) covering the 3D ones. Adding such covering films can also boost power conversion efficiencies of photovoltaic cells by passivating surface/interface trap states. For maximum benefit, we need conformal ultrathin and phase-pure (n = 1) 2D layers to enable efficient tunneling of photogenerated charge carriers through the 2D film barrier. Conformal coverage of ultrathin (

We demonstrate that the direction of current rectification via one of natures most efficient light-harvesting systems, the photosystem 1 complex (PS1), can be controlled by its orientation on Au substrates. Molecular self-assembly of the PS1 complex using four different linkers with distinct functional head groups that interact by electrostatic and hydrogen bonds with different surface parts of the entire protein PS1 complex was used to tailor the PS1 orientation. We observe an orientation-dependent rectification in the currentvoltage characteristics for linker/PS1 molecule junctions. Results of an earlier study using a surface two-site PS1 mutant complex having its orientation set by covalent binding to the Au substrate supports our conclusion. Currentvoltagetemperature measurements on the linker/PS1 complex indicate off-resonant tunneling as the main electron transport mechanism. Our ultraviolet photoemission spectroscopy results highlight the importance of the protein orientation for the energy level alignment and provide insight into the charge transport mechanism via the PS1 transport chain.

The development of vacuum-deposited perovskite materials and devices is partially slowed down by the minor research effort in this direction, due to the high cost of the required research tools. But there is also another factor, thermal co-deposition in high vacuum involves the simultaneous sublimation of several precursors with an overall deposition rate in the range of few Å s⁻¹. This leads to a deposition time of hours with only a single set of process parameters per batch, hence to a long timeframe to optimize even a single perovskite composition. Here we report the combinatorial vacuum deposition of wide bandgap perovskites using 4 sources and a non-rotating sample holder. By using small pixel substrates, more than 100 solar cells can be produced with different perovskite absorbers in a single deposition run. The materials are characterized by spatially resolved methods, including optical, morphological, and structural techniques. By fine-tuning of the deposition rates, the gradient can be altered and the best-performing formulations in standard depositions with rotation can be reproduced. This is viewed as an approach that can serve as a basis to prototype other compositions, overcoming the current limitations of vacuum deposition as a research tool for perovskite films.

A way of modulating the solid-state electron transport (ETp) properties of oligopeptide junctions is presented by charges and internal hydrogen bonding, which affect this process markedly. The ETp properties of a series of tyrosine (Tyr)-containing hexa-alanine peptides, self-assembled in monolayers and sandwiched between gold electrodes, are investigated in response to their protonation state. Inserting a Tyr residue into these peptides enhances the ETp carried
their junctions. Deprotonation of the Tyr-containing peptides causes a further increase of ETp efficiency that depends on this residue's position. Combined results of molecular dynamics simulations and spectroscopic experiments suggest that the increased conductance upon deprotonation is mainly a result of enhanced coupling between the charged C-terminus carboxylate group and the adjacent Au electrode. Moreover, intra-peptide hydrogen bonding of the Tyr hydroxyl to the C-terminus carboxylate reduces this coupling. Hence, the extent of such a conductance change depends on the Tyr-carboxylate distance in the peptide's sequence.

Most of the charge transport properties in halide perovskite (HaP) absorbers are measured by transient measurements with pulsed excitations; however, most solar cells in real life function in steady-state conditions. In contrast to working devices that include selective contacts, steady-state measurements need as high as possible photoconductivity (sigma ph), which is typically restricted to the absorber alone. In this paper, we enabled steady-state charge transport measurement using atomic layer deposition (ALD) to grow a conformal, ultra-thin (similar to 4 nm) ZnO electron transport layer that is laterally insulating due to its thickness. Due to the highly alkaline behavior of the ZnO surfaces, it readily reacts with halide Perovskites. ALD process was used to form an Aluminum oxynitride (AlON) thin (similar to 2 nm) layer that passivates the ZnO-HaP interface. We show that the presence of the AlON layer prevents HaP degradation caused by the interaction with the ZnO layer, improves the HaP sigma ph, and doubles the HaP carrier diffusion lengths.

The environment humidity effects on performance of halide perovskites (HaPs), especially MAPbI3, are known. Nevertheless, it is hard to find direct experimental evidence of H2O in the bulk materials at the levels lower than that of Monohydrate (MAPbI3.H2O). Here, for the first time, direct experimental evidence of water being released from bulk (µms deep) of MAPbI3 single crystal is reported. The thermogravimetric analysis coupled with mass spectrometry (TGAMS) of evolved gases is used to detect the MS signal of H2O from the penetrable depth and correlate it with the TGA mass loss due to H2O leaving the material. These measurements yield an estimate of the average H2O content of 1 H2O molecule per three MAPbI3 formula units (MAPbI3.0.33H2O). Under the relatively low temperature conditions no other evolved gases that can correspond to MAPbI3 decomposition products, are observed in the MS. In addition to being direct evidence that there is H2O inside MAPbI3, the data show that H2O diffuses into it. With this article, a solid basis is proved for further studies on the mechanisms through which water modifies the properties of MAPbI3 and all the other halide perovskites.
Direct evidence of release of H2O from bulk MAPbI3, under the conditions where the MAPbI3 crystal structure is intact and with an indication of a H2O gradient of MAPbI3.xH2O with x=1 at the surface to x=0 in the bulk.

An electrocatalyst composed of RuO₂ surrounded by interfacial carbon, is synthesized through controllable oxidization-calcination. This electrocatalyst provides efficient charge transfer, numerous active sites, and promising activity for pH-universal electrocatalytic overall seawater splitting. An electrolyzer with this catalyst gives current densities of 10 mA cm⁻² at a record low cell voltage of 1.52 V, and shows excellent durability at current densities of 10 mA cm⁻² for up to 100 h. Based on the results, a mechanism for the catalytic activity of the composite is proposed. Finally, a solar-driven system is assembled and used for overall seawater splitting, showing 95% Faraday efficiency.

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in determining these densities. Here, we present a powerful approach to assess the defect densities, based on electric field mapping in working HaP-based solar cells. The minority carrier diffusion lengths were deduced from the electric field profile, measured by electron beam-induced current (EBIC). The EBIC method was used earlier to get the first direct evidence for the n-i-p junction structure, at the heart of efficient HaP-based PV cells, and later by us and others for further HaP studies. This manuscript includes EBIC results on illuminated cell cross sections (in operando) at several light intensities to compare optoelectronic characteristics of different cells made by different groups in several laboratories. We then apply a simple, effective single-level defect model that allows deriving the densities (Nr) of the defect acting as recombination center. We find Nr ≈ 1 × 1013 cm3 for mixed A cation lead bromide-based HaP films and ∼1 × 1014 cm3 for MAPbBr3(Cl). As EBIC photocurrents are similar at the grain bulk and boundaries, we suggest that the defects are at the interfaces with selective contacts rather than in the HaP film. These results are relevant for photovoltaic devices as the EBIC responses distinguish clearly between high- and low-efficiency devices. The most efficient devices have n-i-p structures with a close-to-intrinsic HaP film, and the selective contacts then dictate the electric field strength throughout the HaP absorber.

We report persistent 100-fs period Rabi oscillations between 1s and 2p excitons in halide perovskite single crystals driven by off-resonant low-frequency phonon modes. This contrasts with prevailing models for the electron-phonon coupling in these materials.

Adding a 2D character to halide perovskite (HaP) active layers in ambient-protected cells can improve their stability drastically, which is not obvious from the hydrophobicity of the large cations that force the HaP into a 2D structure. Results of two-photon confocal microscopy are reported to study inherent photo-stability of 2D Pb iodide HaPs in the interior of single crystals. Compared to 3D HaP crystals, 2D ones have higher photo-stability and, under a few sun-equivalent conditions, self-heal efficiently after photo-damage. Using both photoluminescence (PL) intensities (as function of time after photo-damage) and spectra, self-healing dynamics of 2D HaP (C4H9NH3)(2)PbI4, 2D/3D (C4H9NH3)(2)(CH3NH3)(2)Pb3I10 and 3D MAPbI(3) are compared. Differences in response to photo-damage and self-healing ability from different degrees of photo-damage are found between these HaPs. Based on the findings, a possible chemical mechanism for photo-damage and self-healing of the 2D HaPs is suggested: the layered lattice arrangement limits out-diffusion of degradation products, facilitating damage reversal, leading to better 2D HaP photo-stability and self-healing uniformity than for 2D/3D HaPs. One implication of the layered structures' resilience to photo-damage is transfer of their increased stability to devices made with them, such as photovoltaic solar cells and light-emitting diodes.

Combinatorial material science crucially depends on robust, high-throughput characterization methods. While X-ray photoelectron spectroscopy (XPS) may provide detailed information about chemical and electronic properties, it is a time-consuming technique and, therefore, is not viewed as a high-throughput method. Here we present preliminary XPS data of 169 measurement spots on a combinatorial 72 × 72 cm2 CuxNi1−xOy compositional library to explore how characterization and evaluation routines can be optimized to improve throughput in XPS for combinatorial studies. In particular, two quantification approaches are compared. We find that a simple integration (of XPS peak regions) approach is suited for fast evaluation of, in the example system, the [Cu]/([Cu] + [Ni]) ratio. Complementary to that, the time-consuming (XPS peak-) fit approach provides additional insights into chemical speciation and oxidation state changes, without a large deviation of the [Cu]/([Cu] + [Ni]) ratio. This insight suggests exploiting the fast integration approach for real time analysis during XPS data collection, paving the way for an on-the-fly selection of points of interest (i.e., areas on the sample where sudden composition changes have been identified) for detailed XPS characterization. Together with the envisioned improvements when going from laboratory to synchrotron-based excitation sources, this will shorten the analysis time sufficiently for XPS to become a realistic characterization option for combinatorial material science.

Among many riddles posed by halide perovskites, the surprising apparent near-absence of harmful defects stands out. This is commonly explained by invoking defect tolerance (DT), but the term is used loosely, sometimes interchangeably with self-healing (SH). Also, the relation between underlying physical and chemical mechanisms and device behavior is often murky. Here, we offer our views as to what DT and SH constitute, the evidence for and against them, and what research challenges remain.

A central issue in protein electronics is how far the structural stability of the protein is preserved under the very high electrical field that it will experience once a bias voltage is applied. This question is studied on the redox protein Azurin in the solid-state Au/protein/Au junction by monitoring protein vibrations during current transport under applied bias, up to ≈1 GV m
⁻¹, by electrical detection of inelastic electron transport effects. Characteristic vibrational modes, such as C-H stretching, amide (N-H) bending, and A-S (of the bonds that connect the protein to an Au electrode), are not found to change noticeably up to 1.0 V. At >1.0 V, the N-H bending and C-H stretching inelastic features have disappeared, while the Au-S features persist till ≈2 V, i.e., the proteins remain Au bound. Three possible causes for the disappearance of the N-H and C-H inelastic features at high bias, namely, i) resonance transport, ii) metallic filament formation, and iii) bond rupture leading to structural changes in the protein are proposed and tested. The results support the last option and indicate that spectrally resolved inelastic features can serve to monitor in operando structural stability of biological macromolecules while they serve as electronic current conduit.

Direct detection of intrinsic defects in halide perovskites (HaPs) by standard methods utilizing optical excitation is quite challenging, due to the low density of defects in most samples of this family of materials (≤1015 cm-3 in polycrystalline thin films and ≤1011 cm-3 in single crystals, except melt-grown ones). While several electrical methods can detect defect densities 2 eV) HaPs. By measuring HaP layers on both hole- and electron-contact layers, as well as single crystals without contacts, we conclude that the observed deep defects are intrinsic to the Br-based HaP, and we propose a passivation route via the incorporation of a 2Dforming ligand into the precursor solution.

We observe reversible, bias-induced switching of conductance via a blue copper protein azurin mutant, N42C Az, with a nearly 10-fold increase at |V| > 0.8 V than at lower bias. No such switching is found for wild-type azurin, WT Az, up to |1.2 V|, beyond which irreversible changes occur. The N42C Az mutant will, when positioned between electrodes in a solid-state AuproteinAu junction, have an orientation opposite that of WT Az with respect to the electrodes. Current(s) via both proteins are temperature-independent, consistent with quantum mechanical tunneling as dominant transport mechanism. No noticeable difference is resolved between the two proteins in conductance and inelastic electron tunneling spectra at

We track ultrafast charge carrier relaxation and the concurrent build-up of dynamical exciton screening on a 30-fs timescale, and probe strong electron-phonon couplings in halide perovskite crystals by temperature-dependent two-dimensional electronic spectroscopy.

We describe the growth of single crystals of the halide perovskites APbBr3, with varying ratios of Cs to methylammonium (MA) on the A site, by antisolvent vapor-assisted crystallization (AVC) and characterize the structural and compositional homogeneity of the grown crystals. We find improved thermostability for the Cs-rich mixed crystals and suggest that this is caused by a combination of locking-in of the relatively large MA in the smaller lattice of the Cs-rich material as well as by stronger hydrogen bonding between the nitrogen of MA and Br due to reduced lattice size and/or octahedral tilting with increased Cs. We also show that it is possible to grow either compositionally homogeneous crystals or core-shell, compositionally graded crystals by changing the ratio of antisolvent to solvent in the AVC method.

We show a simple modification of spin-coating to obtainpinhole-free, well-coveringanduniformfilms of an all-inorganic Pb-halide perovskite (Pb-HaP),on a flat substrate(i.e., not mesoporous)at standard temperature and pressure. In Pb-HaP-based devices the active film is generally fabricated by spin-coating. This is a challenging task for purely inorganic Pb-HaPs, as, except if nano-crystallites can be used, mostly rough and inhomogeneous thin films with poor optoelectronic quality are obtained. We describe agas flow-assistedmethod to fabricate thinconformalfilms of phase-pure CsPbBr3. First cells made with the resulting CsPbBr3-films, yield solar conversion efficiencies up to 2.5%. Electron beam-induced current measurements of device cross-sections show uniform charge generation profiles, implying >= similar to 0.2 mu m diffusion lengths. Non-encapsulated devices generate stable photocurrent for > 1 hr under continuous illumination at maximum power in ambient.

Successful integration of proteins in solid-state electronics requires contacting them in a non-invasive fashion, with a solid conducting surface for immobilization as one such contact. The contacts can affect and even dominate the measured electronic transport. Often substrates, substrate treatments, protein immobilization, and device geometries differ between laboratories. Thus the question arises how far results from different laboratories and platforms are comparable and how to distinguish genuine protein electronic transport properties from platform-induced ones. We report a systematic comparison of electronic transport measurements between different laboratories, using all commonly used large-area schemes to contact a set of three proteins of largely different types. Altogether we study eight different combinations of molecular junction configurations, designed so that A(geo) of junctions varies from 10(5) to 10(-3) mu m(2). Although for the same protein, measured with similar device geometry, results compare reasonably well, there are significant differences in current densities (an intensive variable) between different device geometries. Likely, these originate in the critical contact-protein coupling (similar to contact resistance), in addition to the actual number of proteins involved, because the effective junction contact area depends on the nanometric roughness of the electrodes and at times, even the proteins may increase this roughness. On the positive side, our results show that understanding what controls the coupling can make the coupling a design knob. In terms of extensive variables, such as temperature, our comparison unanimously shows the transport to be independent of temperature for all studied configurations and proteins. Our study places coupling and lack of temperature activation as key aspects to be considered in both modeling and practice of protein electronic transport experiments.

We report on the chemical and electronic structure of cesium tin bromide (CsSiiBr(3)) and how it is impacted by the addition of 20 mol % tin fluoride (SnF2) to the precursor solution, using both surface-sensitive lab-based soft X-ray photoelectron spectroscopy (XPS) and near-surface bulk-sensitive synchrotron-based hard XPS (HAXPES). To determine the reproducibility and reliability of conclusions, several (nominally identically prepared) sample sets were investigated. The effects of deposition reproducibility, handling, and transport are found to cause significant changes in the measured properties of the films. Variations in the HAXPES-derived compositions between individual sample sets were observed, but in general, they confirm that the addition of 20 mol % SnF2 improves coverage of the titanium dioxide substrate by CsSnBr3 and decreases the oxidation of Sn-II to Sn-IV while also suppressing formation of secondary Br and Cs species. Furthermore, the (surface) composition is found to be Cs-deficient and Sn-rich compared to the nominal stoichiometry. The valence band (VB) shows a SnF2-induced redistribution of Sn 5s-derived density of states, reflecting the changing Sn-II/Sn-IV ratio. Notwithstanding some variability in the data, we conclude that SnF2 addition decreases the energy difference between the VB maximum of CsSnBr3 and the Fermi level, which we explain by defect chemistry considerations.

Extended x-ray absorption fine structure spectroscopy of the light-harvesting formamidinium lead bromide (FAPbBr(3)) perovskite, a system with attractive optoelectronic performance, shows anomalously large variance in Pb-Br bond length, some 50% larger than in its inorganic CsPbBr3 counterpart. Using first-principles molecular dynamics simulations, we find a significant contribution to this variance coming from the FA cation, and show that the FA does not just tumble in its cuboctahedral Br-12 cage, but instead stochastically sticks to, and detaches from one of the 12 nearest Br atoms after another, leading to the large variance in Pb-Br bond length. Our results demonstrate dynamic coupling between the FA-Br moiety and perovskite cage vibrations, and that tunability in dynamics can be achieved by changing the cation type and perovskite lattice parameter. Thus, our results provide information that needs to be considered in any of the intensely debated models of electron-phonon coupling in lead halide perovskites.

Incorporating sustainability into chemistry education in Israel has been an ongoing endeavor for the last 25 years. In this chapter we introduce development, implementation, and research of six different educational initiatives: (1) Incorporating Industrial Chemistry into the teaching and learning of high school chemistry curriculum; (2) National Projects competition: "We have Chemistry: Chemistry, Industry, and the Environment in the Eyes of the Individual and Society"; (3) Promoting higher-order thinking skills using context-based Green Chemistry; (4) Professional Development for teachers: Focusing on sustainability: Materials for Energy (5) Professional Development for teachers: Supporting teachers in teaching socio-scientific issues, and finally; (6) Sustainable Chemistry for tertiary education: Research-based design of an interdisciplinary environmental science course. These initiatives span all levels of chemistry education, and hold a mutual design model, which will be discussed hereby.

Quantum tunneling is the basis of molecular electronics, but often its electron transport range is too short to overcome technical defects caused by downscaling of electronic devices, which limits the development of molecular-/nano-electronics. Marrying electronics with plasmonics may well present a revolutionary way to meet this challenge as it can manipulate electron flow with plasmonics at the nanoscale. Here we report on unusually efficient temperature-independent electron transport, with some photoconductivity, across a new type of junction with active plasmonics. The junction is made by assembly of SiO2 shell-insulated Au nanoparticles (Au@SiO2 NPs) into dense nanomembranes of a few Au@SiO2 layers thick and transport is measured across these membranes. We propose that the mechanism is plasmon-enabled transport, possibly tunneling (as it is temperature-independent). Unprecedentedly ultra-long-range transport across one, up to even three layers of Au@SiO2 in the junction, with a cumulative insulating (silica) gap up to 29 nm/NP layer was achieved, well beyond the measurable limit for normal quantum mechanical tunneling across insulators (similar to 2.5 nm at 0.5-1V). This finding opens up a new interdisciplinary field of exploration in nanoelectronics with wide potential impact on such areas as electronic information transfer.

Halide perovskites are promising optoelectronic materials. Despite impressive device performance, especially in photovoltaics, the femtosecond dynamics of elementary optical excitations and their interactions are still debated. Here we combine ultrafast two-dimensional electronic spectroscopy (2DES) and semiconductor Bloch equations (SBEs) to probe the room-temperature dynamics of nonequilibrium excitations in CsPbBr3 crystals. Experimentally, we distinguish between excitonic and free-carrier transitions, extracting a similar to 30 meV exciton binding energy, in agreement with our SBE calculations and with recent experimental studies. The 2DES dynamics indicate remarkably short,

A sample-type protein monolayer, that can be a stepping stone to practical devices, can behave as an electrically driven switch. This feat is achieved using a redox protein, cytochrome C (CytC), with its heme shielded from direct contact with the solid-state electrodes. Ab initio DFT calculations, carried out on the CytC-Au structure, show that the coupling of the heme, the origin of the protein frontier orbitals, to the electrodes is sufficiently weak to prevent Fermi level pinning. Thus, external bias can bring these orbitals in and out of resonance with the electrode. Using a cytochrome C mutant for direct S-Au bonding, approximately 80 % of the Au-CytC-Au junctions show at greater than 0.5 V bias a clear conductance peak, consistent with resonant tunneling. The on-off change persists up to room temperature, demonstrating reversible, bias-controlled switching of a protein ensemble, which, with its built-in redundancy, provides a realistic path to protein-based bioelectronics.

The author list of this publication should have included Janardan Dagar, from Young Investigator Group Hybrid Materials Formation and Scaling, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekule-Strasse 5, 12489 Berlin, Germany. ́The authors express their sincere apologies to Dr. Dagar for this omission. Dr. Janardan Dagar prepared the iodide-based (mixed MAPI) solar cells used in this work, as shown in the main text in Figure 2b and described in the Supporting Information.Dr. Dagar made thus a significant contribution to this work.

Lead bromide-based halide perovskites are of interest for wide-band-gap (>1.75 eV) absorbers for low-cost solar spectrum splitting to boost solar-to-electrical energy conversion efficiency/area by adding them to c-Si or Cu(In,Ga)Se-2 PV cells and for photoelectrochemical solar fuel synthesis. Deep in-gap electronic states in PV absorbers serve as recombination centers and are detrimental for the cell's photovoltaic performance, especially for the open-circuit voltage (V-oc). We find four different deep defect states in polycrystalline layers of mixed-cation lead tribromide from high-sensitivity modulated surface photovoltage (SPV) spectroscopy. Measurements were performed with different contact configurations, on complete solar cells and on samples before and after aging or stressing at 85 degrees C under illumination. Three of the four states, with energies of similar to 0.63, 0.73, and 1.35 eV below the conduction band edge, are assigned to intrinsic defects, whereas defect states in the middle of the band gap could be associated with (uncontrolled) impurities.

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

The incorporation of proteins as functional components in electronic junctions has received much interest recently due to their diverse bio-chemical and physical properties. However, information regarding the energies of the frontier orbitals involved in their electron transport (ETp) has remained elusive. Here we employ a new method to quantitatively determine the energy position of the molecular orbital, nearest to the Fermi level (E-F) of the electrode, in the electron transfer protein Azurin. The importance of the Cu(ii) redox center of Azurin is demonstrated by measuring gate-controlled conductance switching which is absent if Azurin's copper ions are removed. Comparing different electrode materials, a higher conductance and a lower gate-induced current onset is observed for the material with smaller work function, indicating that ETp via Azurin is LUMO-mediated. We use the difference in work function to calibrate the difference in gate-induced current onset for the two electrode materials, to a specific energy level shift and find that ETp via Azurin is near resonance. Our results provide a basis for mapping and studying the role of energy level positions in (bio)molecular junctions.

In-gap states in solar cell absorbers that are recombination centers determine the cell's photovoltaic performance. Using scanning tunneling spectroscopy (STS), temperature-dependent photoconductivity and steady-state photocarrier-grating measurements we probed, directly and indirectly, the energies of such states, both at the surface and in the bulk of two similar, but different halide perovskites, the single cation MAPbI(3) (here MAPI) and the mixed cation halide perovskite, FA(0.79)MA(0.16)Cs(0.05)Pb(I0.83Br0.17)(3) (here MCHP). We found a correlation between the energy distribution of the in-gap states, as determined by STS measurements, and their manifestation in the photo-transport parameters of the MCHP absorbers. In particular, our results suggest that the in-gap recombination centers in the MCHP are shallower than those of MAPI. This can be one explanation for the better photovoltaic efficiency of the former.

Junctions built from metallic nanoparticles (NPs) can circumvent the diffraction limit and combine molecular/nanoelectronics with plasmonics. However, experimental advances in plasmon-assisted electron transport at the nanoscale have been limited. We construct junctions of a robust, molecule-free, suspended film, built solely from AuNPs, capped by SiO2 shells (Au@SiO2), which give insulating tunneling gaps up to 3.6 nm between the NPs. Current measured across monolayers of such AuNPs shows ultra-long-range, plasmon-enabled electron transport (P-transport), beyond the range of normal electron tunneling across insulators. This finding challenges the present understanding of electron transport in such systems and opens possibilities for future combinations of plasmonics and nanoelectronics.

Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. However, as yet, no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady-state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state parameters. To answer the latter question, we revisited pulsed excitation and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We performed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed time-resolved microwave conductivity and time-resolved photoluminescence measurements as a function of excitation intensity on the same samples of different MAPbI(3) thin films, and found good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of phototransport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective recombination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of excitation intensity. Published by AlP Publishing.

Electrochemical CO2 reduction on Cu electrode has attracted the attention of many researchers in the last decades, because of its potential to generate significant amounts of hydrocarbons at high reaction rates over sustained periods of time. As a result, substantial effort has been devoted to determining the unique catalytic performance of Cu and to elucidate the mechanism through which hydrocarbons are formed. Here we report new insights into CO2 reduction on Cu by electrochemical impedance spectroscopy (EIS) in terms of adsorption/desorption of the reduction intermediates. The potential dependence of charge transfer kinetics is discussed on the basis of EIS results. We revisit the mechanism of the formation of hydrocarbons, taking into account the pH adjacent to the electrode surface, adsorption of HCO3- and CO32-, and the role of active hydrogen. In addition to the enol-like intermediate, proposed previously, we proposed that *COOH center dot radicals, originating from the active involvement of HCO3- and/or CO32- upon reduction are key intermediates for the formation of a variety of C2 and C3 products. Thus, our results provide an additional crucial guideline for the design of future catalysts that can efficiently and selectively reduce CO2 into value-added chemicals.

Lead-based halide perovskites (APbX(3)) are fascinating optoelectronic materials. Because of toxicity issues of Pb, Sn-based halide perovskites are studied, although less so, as an alternative. Adding SnF2 often improves the properties of Sn halide perovskite-based devices. This effect is usually ascribed to suppression of Sn2+ -> Sn4+ oxidation and/or decreased Sn vacancy concentration. These effects will change the doping, sometimes in opposite directions. Here we review the effect of addition of SnF2 during the formation of ASnX(3) layers as observed by different groups, both to the properties of the layers themselves and to photovoltaic cells made from these layers. SnF2 can affect many different properties of the ASnX(3) perovskites, including film morphology, doping, control over formation of unwanted crystal phases, material stability to various factors, and energy level positions. It also improves (in general) the performance of photovoltaic cells made with these layers. Besides focusing on all these issues, we also describe possible doping scenarios for the perovskites, including some that do not appear to have been considered before and conclude that the doping mechanism depends strongly on whether the oxidation of Sn2+ to Sn2+ occurs during the materials preparation or after the film is formed, and if oxygen is involved.

The notion that halide perovskite crystals (ABX(3), where X is a halide) exhibit unique structural and optoelectronic behavior deserves serious scrutiny. After decades of steady and half a decade of intense research, the question which attributes of these materials are unusual, is discussed, with an emphasis on the identification of the most important remaining issues. The goal is to stimulate discussion rather than to merely present a community consensus.

Peptide-based molecular electronic devices are promising due to the large diversity and unique electronic properties of biomolecules. These electronic properties can change considerably with peptide structure, allowing diverse design possibilities. In this work, we explore the effect of the side-chain of the peptide on its electronic properties, by using both experimental and computational tools to detect the electronic energy levels of two model peptides. The peptides include 2Ala and 2Trp as well as their 3-mercaptopropionic acid linker which is used to form monolayers on an Au surface. Specifically, we compare experimental ultraviolet photoemission spectroscopy measurements with density functional theory based computational results. By analyzing differences in frontier energy levels and molecular orbitals between peptides in gas-phase and in a monolayer on gold, we find that the electronic properties of the peptide side-chain are maintained during binding of the peptide to the gold substrate. This indicates that the energy barrier for the peptide electron transport can be tuned by the amino acid compositions, which suggests a route for structural design of peptide-based electronic devices.

Molecular monolayers at metal/semiconductor heterointerfaces affect electronic energy level alignment at the interface by modifying the interface's electrical dipole. On a free surface, the molecular dipole is usually manipulated by means of substitution at its external end. However, at an interface such outer substituents are in close proximity to the top contact, making the distinction between molecular and interfacial effects difficult. To examine how the interface dipole would be influenced by a single atom, internal to the molecule, we used a series of three molecules of identical binding and tail groups, differing only in the inner atom: aryl vinyl ether (PhO), aryl vinyl sulfide (PhS), and the corresponding molecule with a CH2 group allyl benzene (PhC). Molecular monolayers based on all three molecules have been adsorbed on a flat, oxide-free Si surface. Extensive surface characterization, supported by density functional theory calculations, revealed high-quality, well-aligned monolayers exhibiting excellent chemical and electrical passivation of the silicon substrate, in all three cases. Current voltage and capacitance voltage analysis of Hg/PhX (X = C, 0, S)/Si interfaces established that the type of internal atom has a significant effect on the Schottky barrier height at the interface, i.e., on the energy level alignment. Surprisingly, despite the formal chemical separation of the internal atom and the metallic electrode, Schottky barrier heights were not correlated to changes in the semiconductor's effective work function, deduced from Kelvin probe and ultraviolet photoemission spectroscopy on the monolayer-adsorbed Si surface. Rather, these changes correlated well with the ionization potential of the surface-adsorbed molecules. This is interpreted in terms of additional polarization at the molecule/metal interface, driven by potential equilibration considerations even in the absence of a formal chemical bond to the top Hg contact.

We present a measurement of the energies and capture cross-sections of defect states in methylammonium lead bromide (MAPbBr₃) single crystals. Using Laplace current deep level transient spectroscopy (I-DLTS), two prominent defects were observed with energies 0.17 eV and 0.20 eV from the band edges, and further I-DLTS measurements confirmed that these two defects are bulk defects. These results show qualitative agreement with theoretical predictions, whereby all of the observed defects behave as traps rather than as generation-recombination centers. These results provide one explanation for the high efficiencies and open-circuit voltages obtained from devices made with lead halide perovskites.

Obtaining insight into, and ultimately control over, electronic doping of halide perovskites may improve tuning of their remarkable optoelectronic properties, reflected in what appear to be low defect densities and as expressed in various charge transport and optical parameters. Doping is important for charge transport because it determines the electrical field within the semiconducting photoabsorber, which strongly affects collection efficiency of photogenerated charges. Here we report on intrinsic doping of methylammonium lead tri-iodide, MAPbI₃, as thin films of the types used for solar cells and LEDs, by I₂ vapor at a level that does not affect the optical absorption and leads to a small (

We review charge transport across molecular monolayers, which is central to molecular electronics (MolEl), using large-area junctions (NmJ). We strive to provide a wide conceptual overview of three main subtopics. First, a broad introduction places NmJ in perspective to related fields of research and to single-molecule junctions (1mJ) in addition to a brief historical account. As charge transport presents an ultrasensitive probe for the electronic perfection of interfaces, in the second part ways to form both the monolayer and the contacts are described to construct reliable, defect-free interfaces. The last part is dedicated to understanding and analyses of current-voltage (I-V) traces across molecular junctions. Notwithstanding the original motivation of MolEl, I-V traces are often not very sensitive to molecular details and then provide a poor probe for chemical information. Instead, we focus on how to analyze the net electrical performance of molecular junctions, from a functional device perspective. Finally, we point to creation of a built-in electric field as a key to achieve functionality, including nonlinear current-voltage characteristics that originate in the molecules or their contacts to the electrodes. This review is complemented by a another review that covers metal-molecule-semiconductor junctions and their unique hybrid effects.

Recent studies showed that positron annihilation methods can provide key insights into the nanostructure and electronic structure of thin film solar cells. In this study, positron annihilation lifetime spectroscopy (PALS) is applied to investigate CdSe quantum dot (QD) light absorbing layers, providing evidence of positron trapping at the surfaces of the QDs. This enables one to monitor their surface composition and electronic structure. Further, 2D-Angular Correlation of Annihilation Radiation (2D-ACAR) is used to investigate the nanostructure of divacancies in photovoltaic-high-quality a-Si:H films. The collected momentum distributions were converted by Fourier transformation to the direct space representation of the electron-positron autocorrelation function. The evolution of the size of the divacancies as a function of hydrogen dilution during deposition of a-Si:H thin films was examined. Finally, we present a first positron Doppler Broadening of Annihilation Radiation (DBAR) study of the emerging class of highly efficient thin film solar cells based on perovskites.

Simple organic salts are used as a cheap alternative for hole-conducting materials in methylammonium lead bromide perovskite solar cells and obtaining power conversion efficiency of 4.4%. The findings suggest that the polar organic salts interact with the perovskite surface, leading to formation of a surface dipole or change of an existing one on the perovskites that changes its effective work function.

We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO₃). We find that direct contact between MoO₃ and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI₃) layer at the interface still negatively impacts device performance.

Charge migration for electron transfer via the polypeptide matrix of proteins is a key process in biological energy conversion and signaling systems. It is sensitive to the sequence of amino acids composing the protein and, therefore, offers a tool for chemical control of charge transport across biomaterial-based devices. We designed a series of linear oligoalanine peptides with a single tryptophan substitution that acts as a "dopant," introducing an energy level closer to the electrodes' Fermi level than that of the alanine homopeptide. We investigated the solid-state electron transport (ETp) across a selfassembled monolayer of these peptides between gold contacts. The single tryptophan "doping" markedly increased the conductance of the peptide chain, especially when its location in the sequence is close to the electrodes. Combining inelastic tunneling spectroscopy, UV photoelectron spectroscopy, electronic structure calculations by advanced density-functional theory, and dc current-voltage analysis, the role of tryptophan in ETp is rationalized by charge tunneling across a heterogeneous energy barrier, via electronic states of alanine and tryptophan, and by relatively efficient direct coupling of tryptophan to a Au electrode. These results reveal a controlled way of modulating the electrical properties of molecular junctions by tailormade "building block" peptides.

Hysteresis in the current-voltage characteristics of hybrid organic-inorganic perovskite-based solar cells is one of the fundamental aspects of these cells that we do not understand well. One possible cause, suggested for the hysteresis, is polarization of the perovskite layer under applied voltage and illumination bias, due to ion migration within the perovskite. To study this problem systemically, current-voltage characteristics of both regular (light incident through the electron conducting contact) and so-called inverted (light incident through the hole conducting contact) perovskite cells were studied at different temperatures and scan rates. We explain our results by assuming that the effects of scan rate and temperature on hysteresis are strongly correlated to ion migration within the device, with the rate-determining step being ion migration at/across the interfaces of the perovskite layer with the contact materials. By correlating between the scan rate with the measurement temperature, we show that the inverted and regular cells operate in different hysteresis regimes, with different activation energies of 0.28 ± 0.04 eV and 0.59 ± 0.09 eV, respectively. We suggest that the differences observed between the two architectures are due to different rates of ion migration close to the interfaces, and conclude that the diffusion coefficient of migrating ions in the inverted cells is 3 orders of magnitude higher than in the regular cells, leading to different accumulation rates of ions near the interfaces. Analysis of V_OC as a function of temperature shows that the main recombination mechanism is trap-assisted (Shockley-Read Hall, SRH) in the space charge region, similar to what is the case for other thin film inorganic solar cells.

Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite-based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non-PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures. Many innovative device structures were developed, aiming at large-scale fabrication, reducing fabrication cost, enhancing the power conversion efficiency and thus broadening potential future applications. This review summarizes typical structures of perovskite solar cells and comments on novel device structures. The applications of perovskite solar cells are discussed.

To experimentally (dis)prove ferroelectric effects on the properties of lead-halide perovskites and of solar cells, based on them, we used second-harmonic-generation spectroscopy and the periodic temperature change (Chynoweth) technique to detect the polar nature of methylammonium lead bromide (MAPbBr₃). We find that MAPbBr₃ is probably centrosymmetric and definitely non-polar; thus, it cannot be ferroelectric. Whenever pyroelectric-like signals were detected, they could be shown to be due to trapped charges, likely at the interface between the metal electrode and the MAPbBr₃ semiconductor. These results indicate that the ferroelectric effects do not affect steady-state performance of MAPbBr₃ solar cells.

ConspectusHybrid alkylammonium lead halide perovskite solar cells have, in a very few years of research, exceeded a light-to-electricity conversion efficiency of 20%, not far behind crystalline silicon cells. These perovskites do not contain any rare element, the amount of toxic lead used is very small, and the cells can be made with a low energy input. They therefore already conform to two of the three requirements for viable, commercial solar cells-efficient and cheap. The potential deal-breaker is their long-term stability. While reasonable short-term (hours) and even medium term (months) stability has been demonstrated, there is concern whether they will be stable for the two decades or more expected from commercial cells in view of the intrinsically unstable nature of these materials. In particular, they have a tendency to be sensitive to various types of irradiation, including sunlight, under certain conditions.This Account focuses on the effect of irradiation on the hybrid (and to a small degree, all-inorganic) lead halide perovskites and their solar cells. It is split up into two main sections. First, we look at the effect of electron beams on the materials. This is important, since such beams are used for characterization of both the perovskites themselves and cells made from them (electron microscopy for morphological and compositional characterization; electron beam-induced current to study cell operation mechanism; cathodoluminescence for charge carrier recombination studies). Since the perovskites are sensitive to electron beam irradiation, it is important to minimize beam damage to draw valid conclusions from such measurements. The second section treats the effect of visible and solar UV irradiation on the perovskites and their cells. As we show, there are many such effects. However, those affecting the perovskite directly need not necessarily always be detrimental to the cells, while those affecting the solar cells, which are composed of several other phases as well as the perovskite light absorber, are not always due to the perovskite itself. While we cannot yet say whether perovskite solar cells will or will not be stable over the long-term, the information in this Account should be a useful source to help achieve this goal.

Halide perovskite-based solar cells still have limited reproducibility, stability, and incomplete understanding of how they work. We track electronic processes in [CH₃NH₃]PbI₃(Cl) ("perovskite") films in vacuo, and in N₂, air, and O₂, using impedance spectroscopy (IS), contact potential difference, and surface photovoltage measurements, providing direct evidence for perovskite sensitivity to the ambient environment. Two major characteristics of the perovskite IS response change with ambient environment, viz. -1- appearance of negative capacitance in vacuo or post-vacuo N₂ exposure, indicating for the first time an electrochemical process in the perovskite, and -2- orders of magnitude decrease in the film resistance upon transferring the film from O₂-rich ambient atmosphere to vacuum. The same change in ambient conditions also results in a 0.5 V decrease in the material work function. We suggest that facile adsorption of oxygen onto the film dedopes it from n-type toward intrinsic. These effects influence any material characterization, i.e., results may be ambient-dependent due to changes in the material's electrical properties and electrochemical reactivity, which can also affect material stability.

The remarkable optoelectronic and especially photovoltaic performance of hybrid organic-inorganic perovskite (HOIP) materials drives efforts to connect materials properties to this performance. From nano-indentation experiments on solution-grown single crystals we obtain elastic modulus and nano-hardness values of APbX(3) (A = Cs, CH3NH3; X = I, Br). The Young's moduli are similar to 14, 19.5, and 16 GPa, for CH3NH3PbI3, CH3NH3PbBr3, and CsPbBr3, respectively, lending credence to theoretically calculated values. We discuss the possible relevance of our results to suggested self-healing, ion diffusion, and ease of manufacturing. Using our results, together with literature data on elastic moduli, we classified HOIPs amongst the relevant material groups, based on their elastomechanical properties.

We report a combined ultraviolet photoelectron spectroscopy (UPS) and density functional theory (DFT) study of the electronic structure of aromatic self-assembled monolayers covalently bound to Si, using several different aromatic groups (phenyl, biphenyl, and fluorene) and binding groups (O, NH, and CH₂). We obtain excellent agreement between theory and experiment, which allows for a detailed interpretation of the experimental results. Our analysis reveals a significant effect of the binding group on state hybridization at the organic/inorganic interface. Specifically, it highlights that lone-pair electrons in the binding atom facilitate hybridization between the aromatic system and the Si substrate, resulting in a significant induced density of interface states (IDIS). These interface states are manifested as a broadened HOMO peak in the experimental UPS data and are clearly observed in a theoretical spatially-resolved density of states map. This provides means to control the degree of coupling between substrate and molecule, which may prove useful in the design of transport across organic/inorganic interfaces.

We observe temperature-independent electron transport, characteristic of tunneling across a ∼6 nm thick Halorhodopsin (phR) monolayer. phR contains both retinal and a carotenoid, bacterioruberin, as cofactors, in a trimeric protein-chromophore complex. This finding is unusual because for conjugated oligo-imine molecular wires a transition from temperature-independent to -dependent electron transport, ETp, was reported at ∼4 nm wire length. In the ∼6 nm long phR, the ∼4 nm 50-carbon conjugated bacterioruberin is bound parallel to the α-helices of the peptide backbone. This places bacterioruberins ends proximal to the two electrodes that contact the protein; thus, coupling to these electrodes may facilitate the activation-less current across the contacts. Oxidation of bacterioruberin eliminates its conjugation, causing the ETp to become temperature dependent (>180 K). Remarkably, even elimination of the retinal-protein covalent bond, with the fully conjugated bacterioruberin still present, leads to temperature-dependent ETp (>180 K). These results suggest that ETp via phR is cooperatively affected by both retinal and bacterioruberin cofactors.

The soft character of organic materials leads to strong coupling between molecular, nuclear and electronic dynamics. This coupling opens the way to influence charge transport in organic electronic devices by exciting molecular vibrational motions. However, despite encouraging theoretical predictions, experimental realization of such approach has remained elusive. Here we demonstrate experimentally that photoconductivity in a model organic optoelectronic device can be modulated by the selective excitation of molecular vibrations. Using an ultrafast infrared laser source to create a coherent superposition of vibrational motions in a pentacene/C₆₀ photoresistor, we observe that excitation of certain modes in the 1,500-1,700 cm^-1 region leads to photocurrent enhancement. Excited vibrations affect predominantly trapped carriers. The effect depends on the nature of the vibration and its mode-specific character can be well described by the vibrational modulation of intermolecular electronic couplings. This presents a new tool for studying electron-phonon coupling and charge dynamics in (bio)molecular materials.

High band gap, high open-circuit voltage solar cells with methylammonium lead tribromide (MAPbBr₃) perovskite absorbers are of interest for spectral splitting and photoelectrochemical applications, because of their good performance and ease of processing. The physical origin of high performance in these and similar perovskite-based devices remains only partially understood. Using cross-sectional electron-beam-induced current (EBIC) measurements, we find an increase in carrier diffusion length in MAPbBr₃(Cl)-based solar cells upon low intensity (a few percent of 1 sun intensity) blue laser illumination. Comparing dark and illuminated conditions, the minority carrier (electron) diffusion length increases about 3.5 times from L_n = 100 ± 50 nm to 360 ± 22 nm. The EBIC cross section profile indicates a p-n structure between the n-FTO/TiO₂ and p-perovskite, rather than the p-i-n structure, reported for the iodide derivative. On the basis of the variation in space-charge region width with varying bias, measured by EBIC and capacitance-voltage measurements, we estimate the net-doping concentration in MAPbBr₃(Cl) to be 3-6 × 10¹⁷ cm^-3.

The great promise of hybrid organic-inorganic lead halide perovskite (HOIP)-based solar cells is being challenged by its Pb content and its sensitivity to water. Here, the impact of rain on methylammonium lead iodide perovskite films was investigated by exposing such films to water of varying pH values, simulating exposure of the films to rain. The amount of Pb loss was determined using both gravimetric and inductively coupled plasma mass spectrometry measurements. Using our results, the extent of Pb loss to the environment, in the case of catastrophic module failure, was evaluated. Although very dependent on module siting, even total destruction of a large solar electrical power generating plant, based on HOIPs, while obviously highly undesirable, is estimated to be far from catastrophic for the environment.

Using ultrafast visible/IR pulse-sequence spectroscopy combined with electric current detection, we engage vibronic and charge-delocalization phenomena to control the performance of optoelectronic devices base on organic semiconductors, colloidal quantum dots and conductive oxides.

Reproducible molecular junctions can be integrated within standard CMOS technology. Metal-molecule-semiconductor junctions are fabricated by direct Si-C binding of hexadecane or methyl-styrene onto oxide-free H-Si(111) surfaces, with the lateral size of the junctions defined by an etched SiO₂ well and with evaporated Pb as the top contact. The current density, J, is highly reproducible with a standard deviation in log( J ) of 0.2 over a junction diameter change from 3 to 100 μm. Reproducibility over such a large range indicates that transport is truly across the molecules and does not result from artifacts like edge effects or defects in the molecular monolayer. Device fabrication is tested for two n-Si doping levels. With highly doped Si, transport is dominated by tunneling and reveals sharp conductance onsets at room temperature. Using the temperature dependence of current across medium-doped n-Si, the molecular tunneling barrier can be separated from the Si-Schottky one, which is a 0.47 eV, in agreement with the molecular-modified surface dipole and quite different from the bare Si-H junction. This indicates that Pb evaporation does not cause significant chemical changes to the molecules. The ability to manufacture reliable devices constitutes important progress toward possible future hybrid Si-based molecular electronics.

A central vision in molecular electronics is the creation of devices with functional molecular components that may provide unique properties. Proteins are attractive candidates for this purpose, as they have specific physical (optical, electrical) and chemical (selective binding, self-assembly) functions and offer a myriad of possibilities for (bio-)chemical modification. This Progress Report focuses on proteins as potential building components for future bioelectronic devices as they are quite efficient electronic conductors, compared with saturated organic molecules. The report addresses several questions: how general is this behavior; how does protein conduction compare with that of saturated and conjugated molecules; and what mechanisms enable efficient conduction across these large molecules? To answer these questions results of nanometer-scale and macroscopic electronic transport measurements across a range of organic molecules and proteins are compiled and analyzed, from single/few molecules to large molecular ensembles, and the influence of measurement methods on the results is considered. Generalizing, it is found that proteins conduct better than saturated molecules, and somewhat poorer than conjugated molecules. Significantly, the presence of cofactors (redox-active or conjugated) in the protein enhances their conduction, but without an obvious advantage for natural electron transfer proteins. Most likely, the conduction mechanisms are hopping (at higher temperatures) and tunneling (below ca. 150-200 K).

Potential future use of bacteriorhodopsin (bR) as a solid-state electron transport (ETp) material requires the highest possible active protein concentration. To that end we prepared stable monolayers of protein-enriched bR on a conducting HOPG substrate by lipid depletion of the native bR. The ETp properties of this construct were then investigated using conducting probe atomic force microscopy at low bias, both in the ground dark state and in the M-like intermediate configuration, formed upon excitation by green light. Photoconductance modulation was observed upon green and blue light excitation, demonstrating the potential of these monolayers as optoelectronic building blocks. To correlate protein structural changes with the observed behavior, measurements were made as a function of pressure under the AFM tip, as well as humidity. The junction conductance is reversible under pressure changes up to ∼300 MPa, but above this pressure the conductance drops irreversibly. ETp efficiency is enhanced significantly at >60% relative humidity, without changing the relative photoactivity significantly. These observations are ascribed to changes in protein conformation and flexibility and suggest that improved electron transport pathways can be generated through formation of a hydrogen-bonding network.

The field of organo-lead perovskite absorbers for solar cells is developing rapidly, with open-circuit voltage of reported devices already approaching the maximal theoretical voltage. Obtaining such high voltages on spun-cast or evaporated thin films is intriguing and calls for detailed investigation of the source of photovoltage in those devices. We present here a study of the roles of the selective contacts to methylammonium lead iodide chloride (MAPbI _3-xCl_x) using surface photovoltage spectroscopy. By depositing and characterizing each layer at a time, we show that the electron-extracting interface is more than twice as effective as the hole-extracting interface in generating photovoltage, for several combinations of electrode materials. We further observe the existence of an electron-injection related spectral feature at 1.1 eV, which might bear significance for the cell's operation. Our results illustrate the usefulness of SPV spectroscopy in highlighting gaps in cells efficiency and for deepening the understanding of charge injection processes in perovskite-based photovoltaics.

The work function (WF) of ZnO is modified by two types of dipole-bearing phenylphosphonate layers, yielding a maximum WF span of 1.2 eV. H ₃CO-phenyl phosphonate, with a positive dipole (positive pole pointing outwards from the surface), lowers the WF by ∼350 meV. NC-phenyl phosphonate, with a negative dipole, increases the WF by ∼750 meV. The WF shift is found to be independent of the type of ZnO surface. XPS data show strong molecular dipoles between the phenyl and the functionalizing (CN and OMe) tail groups, while an opposite dipole evolves in each molecular layer between the surface and the phenyl rings. The molecular modification is found to be invariant to supra-bandgap illumination, which indicates that the substrate's space charge-induced built-in potential is unlikely to be the reason for the WF difference. ZnO, grown by several different methods, with different degrees of crystalline perfection and various morphologies and crystallite dimensions, could all be modified to the same extent. Furthermore, a mixture of opposite dipoles allows gradual and continuous tuning of the WF, varying linearly with the partial concentration of the CN-terminated phosphonate in the solution. Exposure to the phosphonic acids during the molecular layer deposition process erodes a few atomic layers of the ZnO. The general validity of the treatment and the fine-tuning of the WF of treated interfaces are of interest for solar cells and LED applications.

Direct and inverse photoemission spectroscopies are used to determine materials electronic structure and energy level alignment in hybrid organic-inorganic perovskite layers grown on TiO₂. The results provide a quantitative basis for the analysis of perovskite-based solar cell performance and choice of an optimal hole-extraction layer. This journal is

The remarkable advances over the past few years in performance of photovoltaic cells, including the advent of new absorber materials, call for an update to the previous assessment of prospects for future progress. The same simple criteria with some refinements, based on cell and module performance data, serve to evaluate and compare most types of solar cells. Apart from Si and InP, for all types the "best cells" have improved in conversion performances (and crystalline Si modules have made major strides in cost reduction). New cell types, such as "perovskite", sustainable chalcogenide, and quantum dot cells, are included. CdTe results bring those cells in line with other well-developed ones, lending some credence to the idea that the criteria provide the reader with knowledge, useful for gauging possible future technological developments. Additionally, the developments of the past few years show that, while the advent of more new cell types cannot be predicted, it can be aided and stimulated by innovative, daring, and creative new materials research. The 2011-2013 period has seen amazing progress of nearly all solar-cell types that have possible or actual practical potential, including significant cost decreases of commercial cells. A concise update of the current status and future prospects of solar-cell research is given.

The alignment between the energy levels of the constituents of an organic solar cell plays a central role in determining the open-circuit voltage. However, tuning the energy levels of electrodes and/or active components via molecular modifiers placed at interfaces is not straightforward. The morphology of organic materials is commonly controlled by the substrate onto which they are deposited, and differences in morphology often lead to differences in energetics. Such a change in morphology may reduce the effect of surface modifications, as the modified surface is part of an interface with the organic material. Here we show, in an experimental model system, that by using binary molecular monolayers, in which dipolar molecules are buried in a protective nonpolar matrix, we can transform changes in the electrode surface dipole into interface dipole changes without significantly affecting the growth of pentacene onto the molecular layer, thus enabling the use of the full range of dipolar-induced open-circuit-voltage tuning.

We survey published experimental data on the performance of cells and modules to compare all types of today's solar cells and with these find solar cell efficiencies that we can strive towards. Such an approach allows identifying limits that need to be considered for real solar cells on top of the ShockleyQueisser (S-Q) limit, as the latter applies strictly to an ideal model system. Prominent among the additional limits is the degree of disorder of the absorber, strongest for amorphous Si-based cells, and minimal for IIV-based cells (and hopefully, for the new perovskite ones). While adding extra limits lead to lower numbers than the S-Q ones, normally used, the results help us to see what we can hope to reach in practice, in terms of technological progress and in terms of champion cells.

We report on the passivation properties of molecularly modified, oxide-free Si(111) surfaces. The reaction of 1-alcohol with the H-passivated Si(111) surface can follow two possible paths, nucleophilic substitution (S_N) and radical chain reaction (RCR), depending on adsorption conditions. Moderate heating leads to the S_N reaction, whereas with UV irradiation RCR dominates, with S_N as a secondary path. We show that the site-sensitive S_N reaction leads to better electrical passivation, as indicated by smaller surface band bending and a longer lifetime of minority carriers. However, the surface-insensitive RCR reaction leads to more dense monolayers and, therefore, to much better chemical stability, with lasting protection of the Si surface against oxidation. Thus, our study reveals an inherent dissonance between electrical and chemical passivation. Alkoxy monolayers, formed under UV irradiation, benefit, though, from both chemical and electronic passivation because under these conditions both S_N and RCR occur. This is reflected in longer minority carrier lifetimes, lower reverse currents in the dark, and improved photovoltaic performance, over what is obtained if only one of the mechanisms operates. These results show how chemical kinetics and reaction paths impact electronic properties at the device level. It further suggests an approach for effective passivation of other semiconductors.

Integrating proteins in molecular electronic devices requires control over their solid-state electronic transport behavior. Unlike "traditional" electron transfer (ET) measurements of proteins that involve liquid environments and a redox cycle, no redox cofactor is needed for solid-state electron transport (ETp) across the protein. Here we show the fundamental difference between these two approaches by macroscopic area measurements, which allow measuring ETp temperature dependence down to cryogenic temperatures, via cytochrome C (Cyt C), an ET protein with a heme (Fe-porphyrin) prosthetic group as a redox centre. We compare the ETp to electrochemical ET measurements, and do so also for the protein without the Fe (with metal-free porphyrin) and without porphyrin. As removing the porphyrin irreversibly alters the protein's conformation, we repeat these measurements with human serum albumin (HSA), 'doped' (by non-covalent binding) with a single hemin equivalent, i.e., these natural and artificial proteins share a common prosthetic group. ETp via Cyt C and HSA-hemin are very similar in terms of current magnitude and temperature dependence, which suggests similar ETp mechanisms via these two systems, thermally activated hopping (with ∼0.1 eV activation energy) >190 K and tunneling by superexchange

Monolayers of the redox protein Cytochrome C (CytC) can be electrostatically formed on an H-terminated Si substrate, if the protein- and Si-surface are prepared so as to carry opposite charges. With such monolayers we study electron transport (ETp) via CytC, using a solid-state approach with macroscopic electrodes. We have revealed that currents via holo-CytC are almost 3 orders of magnitude higher than via the heme-depleted protein (→ apo-CytC). This large difference in currents is attributed to loss of the proteins' secondary structure upon heme removal. While removal of only the Fe ion (→ porphyrin-CytC) does not significantly change the currents via this protein at room temperature, the 30-335 K temperature dependence suggests opening of a new ETp pathway, which dominates at high temperatures (>285 K). These results suggest that the cofactor plays a major role in determining the ETp pathway(s) within CytC.

Contact potential difference (CPD) measurements of the relative work functions of a range of organic semiconductor thin films show that oxygen causes effective p-type doping (with work functions increasing 0.1-0.3 eV). This doping effect is found to be reversible by exposure to high vacuum or heating in inert atmosphere. The mechanism of doping is explained by a model, based on a reversible formation of an O-substrate charge transfer state. Conductivity measurements of p-phthalocyanine films at variable temperatures support this doping model. The oxygen doping effect is consistent with filling of tail states in the gap, as shown by the increase of activation energy of hole transport with decreased O-doping, and by the good fit between experimental data and simulations of the in-gap density of states. A model hybrid solar cell configuration also shows the effect of doping by O₂ and corroborates the fact that O-doping fills the tail states in the system.

An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.

Keywords: Physics, Applied; Physics, Condensed Matter

Measuring solid-state electron transport (ETp) across proteins allows studying electron transfer (ET) mechanism(s), while minimizing solvation effects on the process. ETp is, however, sensitive to any static (conformational) or dynamic (vibrational) changes in the protein. Our macroscopic measurements allow extending ETp studies to low temperatures, with the concomitant resolution of lower current densities, because of the larger electrode contact areas. Thus, earlier we reported temperature-independent ETp via the copper protein azurin (Az), from 80 K until denaturation, whereas for apo-Az ETp was temperature dependent above 180 K. Deuteration (H/D substitution) may provide mechanistic information on the question of whether the ETp involves H-bonds in the solid state. Here we report results of kinetic deuterium isotope effect (KIE) measurements on ETp through holo-Az as a function of temperature (30-340 K). Strikingly, deuteration changed ETp from temperature independent to temperature dependent above 180 K. This H/D effect is expressed in KIE values between 1.8 (340 K) and 9.1 (≤180 K). These values are remarkable in light of the previously reported inverse KIE on ET in Az in solution. We ascribe the difference between our KIE results and those observed in solution to the dominance of solvent effects in the latter (larger thermal expansion in H ₂O than in D₂O), whereas in our case the KIE is primarily due to intramolecular changes, mainly in the low-frequency structural modes of the protein caused by H/D exchange. The observed high KIE values are consistent with a transport mechanism that involves through-H-bonds of the β-sheet structure of Az, likely also those in the Cu coordination sphere.

In recent years, conducting and semiconducting polymers such as PEDOT:PSS and P3HT have become commercially available, and as a result, a new type of polymer/Si heterostructure solar cell is emerging. With a conducting polymer (a degenerate semiconductor) as emitter, such an organic/inorganic hybrid heterojunction is likely to achieve high conversion efficiencies only if the inorganic semiconductor is pushed into strong inversion to reduce dramatically the space-charge recombination and to mitigate the poor lateral conductance of the polymeric layer. We explain this notion through a review of the types of solar cells based on an inversion layer, induced in the semiconductor absorber by a metal, by a dielectric material with fixed charges, or by another semiconductor. In these types, which include the metal-insulator-semiconductor (MIS), semiconductor-insulator-semiconductor, and MIS inversion layer solar cells, interfaces play a crucial role, even more so than in other forms of solid-state photovoltaics. We also point out the strategy by which atomic-layer-deposited Al₂O₃ can be used to form an inversion layer solar cell on an n-Si emitter.

Solid-state electron transport (ETp) via a monolayer of immobilized azurin (Az) was examined by conducting probe atomic force microscopy (CP-AFM), as a function of both temperature (248-373K) and applied tip force (6-15 nN). At low forces, ETp via holo-Az (with Cu²⁺) is temperature-independent, but thermally activated via the Cu-depleted form of Az, apo-Az. While this observation agrees with those of macroscopic-scale measurements, we find that for holo-Az the mechanism of ETp at high temperatures changes upon an increase in the force applied by the tip to the proteins; namely, above 310 K and forces >6 nN ETp becomes thermally activated. This is in contrast to apo-Az, where increasing applied force causes only small monotonic increases in currents due to decreased electrode separation. The distinct ETp temperature dependence of holo- and apo-Az is assigned to a difference in structural response to pressure between the two protein forms. An important implication of these CP-AFM results (of measurements over a significant temperature range) is that for reliable ETp measurements on flexible macromolecules, such as proteins, the pressure applied during the measurements should be controlled or at least monitored.

Good passivation of Si, both electrically and chemically, is achieved by monolayers of 1,9-decadiene, directly bound to an oxide-free Si surface. The terminal C - C bond of the decadiene serves for further in situ reaction, without harming the surface passivation, to -OH- or -Br-terminated monolayers that have different dipole moments. Such a two-step procedure meets the conflicting requirements of binding mutually repelling dipolar groups to a surface, while chemically blocking all surface reactive sites. We demonstrate a change of 0.15 eV in the Si surface potential, which translates into a 0.4 eV variation in the Schottky barrier height of a Hg junction to those molecularly modified n-Si surfaces. Charge transport across such junctions is controlled both by tunneling across the molecular monolayer and by the Si space charge. For reliable insight into transport details, we resorted to detailed numerical simulations, which reveal that the Si space charge and the molecular tunneling barriers are coupled. As a result, attenuation due to the molecular tunneling is much weaker than in metal/molecule/metal molecular junctions. Simulation shows also that some interface states are present but that they have a negligible effect on Fermi level pinning. These states are efficiently decoupled from the metal (Hg) and interact mostly with the Si.

Electrical transport studies across nm-thick dielectric films can be complicated, and datasets compromised, by local electrical breakdown enhanced by nm-sized features. To avoid this problem we need to know the minimal voltage that causes the enhanced electrical breakdown, a task that usually requires numerous measurements and simulation of which is not trivial. Here we describe and use a model system, using a "floating" gold pad to contact Au nanoparticles, NPs, to simultaneously measure numerous junctions with high aspect ratio NP contacts, with a dielectric film, thus revealing the lowest electrical breakdown voltage of a specific dielectric-nanocontact combination. For a 48 ± 1.5 Å SiO ₂ layer and a ∼7 Å monolayer of organic molecules (to link the Au NPs) we show how the breakdown voltage decreases from 4.5 ± 0.4 V for a flat contact, to 2.4 ± 0.4 V if 5 nm Au NPs are introduced on the surface. The fact that larger Au NPs on the surface do not necessarily result in significantly higher breakdown voltages illustrates the need for combining experiments with model calculations. This combination shows two opposite effects of increasing the particle size, i.e., increase in defect density in the insulator and decrease in electric field strength. Understanding the process then explains why these systems are vulnerable to electrical breakdown as a result of spikes in regular electrical grids. Finally we use XPS-based chemically resolved electrical measurements to confirm that breakdown occurs indeed right below the nm-sized features.

Compositional uniformity of Cu(In,Ga)Se ₂ (CIGS) solar cells was studied, using thin cross sections of complete cells prepared by focused ion beam (FIB) and examined in the transmission electron microscope (TEM). This methodology revealed the compositional variations at the nm-scale. The Ga and In compositions vary not only between neighboring grains, but also inside individual single crystal grains along their growth direction, which explains the electrical non-uniformity seen in electron beam-induced current (EBIC) measurements. The improved compositional uniformity with increase in sample preparation temperature correlates with higher solar cell efficiency.

We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

Freezing out of molecular motion and increased molecular tilt enhance the efficiency of electron transport through alkyl chain monolayers that are directly chemically bound to oxide-free Si. As a result, the current across such monolayers increases as the temperature decreases from room temperature to ∼80 K, i.e., opposite to thermally activated transport such as hopping or semiconductor transport. The 30-fold change for transport through an 18-carbon long alkyl monolayer is several times the resistance change for actual metals over this range. FTIR vibrational spectroscopic measurements indicate that cooling increases the packing density and reduces the motional freedom of the alkyl chains by first stretching the chains and then gradually tilting the adsorbed molecules away from the surface normal. Ultraviolet photoelectron spectroscopy shows drastic sharpening of the valence band structure as the temperature decreases, which we ascribe to decreased electron-phonon coupling. Although conformational changes are typical in soft molecular systems, in molecular electronics they are rarely observed experimentally or considered theoretically. Our findings, though, indicate that the molecular conformational changes are a prominent feature, which imply behavior that differs qualitatively from that described by models of electronic transport through inorganic mesoscopic solids.

We compare the charge transport characteristics of heavy-doped p ⁺⁺- and n ⁺⁺-Si-alkyl chain/Hg junctions. Based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction we suggest that for both p ⁺⁺- and n ⁺⁺-type junctions, the energy difference between the Fermi level and lowest unoccupied molecular orbital (LUMO), i.e., electron tunneling, controls charge transport. This conclusion is supported by results from photoelectron spectroscopy (ultraviolet photoemission spectroscopy, inverse photoelectron spectroscopy, and x-ray photoemission spectroscopy) for the molecule-Si band alignment at equilibrium, which clearly indicate that the energy difference between the Fermi level and the LUMO is much smaller than that between the Fermi level and the highest occupied molecular orbital (HOMO). Furthermore, the experimentally determined Fermi level - LUMO energy difference, agrees with the non-resonant tunneling barrier height, deduced from the exponential length attenuation of the current.

Despite many recent research efforts, the influence of grain boundaries (GBs) on device properties of CuIn_1-xGa_xSe₂ solar cells is still not fully understood Here, we present a microscopic approach to characterizing GBs in polycrystalline CuIn_1-xGa _xSe₂ films with x = 0.33. On samples from the same deposition process we applied methods giving complementary information, i.e., electron backscatter diffraction (EBSD), electron-beam induced current measurements (EBIC), conductive atomic force microscopy (c-AFM), variable-temperature Kelvin probe force microscopy (KPFM), and scanning capacitance microscopy (SCM). By combining EBIC with EBSD, we find a decrease in charge-carrier collection for non-σ3 GBs, while σ 3 GBs exhibit no variation with respect to grain interiors. In contrast, a higher conductance of GBs compared to grain interiors was found by c-AFM at low bias and under illumination. By KPFM, we directly measured the band bending at GBs, finding a variation from - 80 up to + 115 mV. Depletion and even inversion at GBs was confirmed by SCM. We comparatively discuss the apparent differences between the results obtained by various microscopic techniques.

What are the solar cell efficiencies that we can strive towards? We show here that several simple criteria, based on cell and module performance data, serve to evaluate and compare all types of today's solar cells. Analyzing these data allows to gauge in how far significant progress can be expected for the various cell types and, most importantly from both the science and technology points of view, if basic bounds, beyond those known today, may exist, that can limit such progress. This is important, because half a century after Shockley and Queisser (SQ) presented limits, based on detailed balance calculations for single absorber solar cells, those are still held to be the only ones, we need to consider; most efforts to go beyond SQ are directed towards attempts to circumvent them, primarily via smart optics, or optoelectronics. After formulating the criteria and analyzing known loss mechanisms, use of such criteria suggests-additional limits for newer types of cells, Organic and Dye-Sensitized ones, and their siblings,-prospects for progress and-further characterization needs, all of which should help focusing research and predictions for the future. Several simple criteria, based on cell and module performance data, are used to evaluate and compare all types of today's solar cells. Analyzing these data allows to gauge in how far significant progress can be expected for the various cell types and if basic bounds, beyond those known today, may exist, that can limit such progress.

Focus During the last decade the direct conversion of solar energy to electricity by photovoltaic cells has emerged from a pilot technology to one that produced 11 GW_p of electricity generating capacity in 2009. With production growing at 50%70% a year (at least until 2009) photovoltaics (PV) is becoming an important contributor to the next generation of renewable green power production. The question is that of how we can move to the terawatt (TW) scale [1]. Synopsis The rapid evolution of PV as an alternative means of energy generation is bringing it closer to the point where it can make a significant contribution to challenges posed by the rapid growth of worldwide energy demand and the associated environmental issues. Together with the main existing technology, which is based on silicon (Si), the growth of the field is intertwined with the development of new materials and fabrication approaches. The PV industry, which was, until recently, based primarily on crystalline, polycrystalline, and amorphous Si, grew at an average annual rate of 50% during 20002010. This rate was increasing, at least until the 2008 economic crisis, with production of ~11 gigawatts (GW_p) per year in 2009 [2]. While this may seem a very large number, PV installations in total are still supplying only

One of the major problems in molecular electronics is how to make electronically conducting contact to the "soft" organic and biomolecules without altering the molecules. As a result, only a small number of metals can be applied, mostly by special deposition methods with severe limitations. Transferring a predefined thin metal leaf onto a molecular layer provides a nondestructive, noninvasive contacting method that is, in principle, applicable to many types of metal and a variety of metal/molecules combinations. Here we report a modification of our earlier lift-off, float-on (LOFO) method, using as a basis its offspring, the polymer-assisted lift-off (PALO) method, where a backing polymer enables simultaneous deposition of multiple contacts as well as reduces wrinkles in the thin metal leaf. The modified PALO (MoPALO) method, reported here, adds lithography steps to obviate the need to punch through the polymer, as is done to complete PALO contacts. Morphological characterization of the electrodes indicates highly uniform, wrinkle-free contacts of negligible roughness. The good electrical performance of the MoPALO contacts was proven with metal/organic-monolayer/semiconductor (MOMS) junctions, which are known to be very sensitive to molecular degradation and metal penetration. We also show how MoPALO contacts enabled us to compare the effect of varying the metal work function and contact area on the current-voltage characteristics of MOMS devices.

Using a semiconductor as the substrate to a molecular organic layer, penetration of metal contacts can be clearly identified by the study of electronic charge transport through the layer. A series of monolayers of saturated hydrocarbon molecules with varying lengths is assembled on Si or GaAs and the junctions resulting after further electronic contact is made by liquid Hg, indirect metal evaporation, and a "ready-made" metal pad are measured. In contrast to tunneling characteristics, which are ambiguous regarding contact penetration, the semiconductor surface barrier is very sensitive to any direct contact with a metal. With the organic monolayer intact, a metal-insulator-semiconductor (MIS) structure results. If metal penetrated the monolayer, the junction behaves as a metal-semiconductor (MS) structure. By comparing a molecule-free interface (MS junction) with a molecularly modified one (presumably MIS), possible metal penetration is identified. The major indicators are the semiconductor electronic transport barrier height, extracted from the junction transport characteristics, and the photovoltage. The approach does not require a series of different monolayers and data analysis is quite straightforward, helping to identify non-invasive ways to make electronic contact to soft matter.

Electron transfer (ET) through proteins, a fundamental element of many biochemical reactions, is studied Intensively in aqueous solutions. Over the past decade, attempts were made to Integrate proteins into solid-state Junctions in order to study their electronic conductance properties. Most such studies to date were conducted with one or very few molecules In the Junction, using scanning probe techniques. Here we present the high-yield, reproducible preparation of large-area monolayer Junctions, assembled on a Si platform, of proteins of three different families: azurln (Az), a blue-copper ET protein, bacterlorhodopsln (bR), a membrane proteln-chromophore complex with a proton pumping function, and bovine serum albumin (BSA). We achieve highly reproducible electrical current measurements with these three types of monolayers using appropriate top electrodes. Notably, the current-voltage (i-V) measurements on such Junctions show relatively minor differences between Az and bR, even though the latter lacks any known ET function. Electron Transport (ETp) across both Az and bR is much more efficient than across BSA, but even for the latter the measured currents are higher than those through a monolayer of organic, C18 alkyl chains that is about half as wide, therefore suggesting transport mechanlsm(s) different from the often considered coherent mechanism. Our results show that the employed proteins maintain their conformation under these conditions. The relatively efficient ETp through these proteins opens up possibilities for using such blomolecules as current-carrying elements in solid-state electronic devices.

Some simple criteria can serve to estimate to what extent further developments are possible for the various types of photovoltaic cells and to which degree basic limitations may affect such developments. To do so, we use several yardsticks, namely 1. The fraction that the efficiency of the best commercially available module represents of the most efficient, reported laboratory cell; 2. The fractions of the maximal possible current for this cell that are represented by the short circuit current and the current at maximum power of this best laboratory cell; and 3. The fractions of the optical bandgap or the energy of the effective optical absorption edge of the cell, that are represented by the open circuit voltage and the voltage at maximum power of this best laboratory cell. An additional yardstick is the fraction of the efficiency of the best laboratory cell of the Shockley-Queisser (SQ) efficiency. This last yardstick reflects mostly academic ability rather than industrial promise. To some extent the first yardstick expresses the manufacturing maturity of the cell type, shown by the higher value for CdTe than for CIGS, or for the single-, compared to the multi-junction a-Si modules, with the ratios for the dye and organic systems much lower still. The ratio for the highly developed Si cells does show what can be expected. While the second and the third yardsticks express a limit, related to the SQ one, the rather low molecular cell values appear to indicate basic limitations for such cells, which we note. The significant differences between a-Si on the one hand and CdTe and CIGS cells on the other hand genuinely reflect the different physics of these polycrystalline systems. The need to identify and define limitations and distinguish then from immaturity is becoming critical for future thin film cell development and this type of analysis can, therefore help us making our choices for the future.

Bromine-terminated alkyl-chain monolayers, bound to oxide-free Si substrates, were prepared by self-assembly. Infrared spectroscopy and atomic force microscopy imply that monolayer packing density improves after hydrolysis, despite an increase in the presence of oxide. The probable reason is that OH-mediated intermolecular H-bonding along the monolayer emerges after hydrolysis and rearranges the molecular components of the insulating layer. Current - voltage and differential capacitance measurements show that also the interfacial electronic properties of these junctions are changed by hydrolysis of the Br groups. This is expressed in an increased effective Schottky barrier height and a decreased junction ideality factor. We correlate the proposed structural changes of the monolayer with the change in the interfacial electronic properties, with the help of the inhomogeneous Schottky barrier height model. The role of oxide in the charge transport through the monolayer is discussed, as well.

We report on electronic transport measurements through dense monolayers of CH ₃(CH ₂) _nPO ₃H ₂ molecules of varying chain lengths, with a strong and stable bond through the phosphonic acid end group to a GaAs surface and a Hg top contact. The monolayers maintain their high quality during and after the electrical measurements. Analyses of the electronic transport measurements of junctions, and of UV and inverse photoemission spectroscopy data on band alignments of free surfaces, yield insight about the electrical transport mechanism. Transport characteristics for n-GaAs junctions at low forward bias are identical for different chain lengths, a strong indication of high-quality monolayers. Tunneling barrier and carrier effective mass values for n- and p-GaAs samples were deduced from the transport data. In this way we find a tunneling barrier for n-GaAs of 1.3 eV, while UPS data for the lowest unoccupied system orbital (LUSO) point to a 2.4 eV barrier. This discrepancy can be understood by invoking states, closer to the Fermi level than the LUSO state, that contribute to charge transport. Such states lead to a manifold of transitions, each having a different probability, both because of differences in the tunnel barrier and because of differences in density of these interface-induced states; i.e., the single barrier, deduced from J-V measurements, is an effective value only.

Alkyl chain molecules on n-Si were used to test the concept of hybrid metal-organic insulator-semiconductor (MOIS) solar cells. Test structures were made by binding alkyl chain molecules via Si-O-C bonds to oxide-free n-Si surfaces, using self-assembly. With thiol groups at the terminals away from the Si, binding of Au nanoparticles, followed by electroless Au plating yields semitransparent top contacts. First cells give, under 25 mW/ cm² white light illumination, open-circuit voltage V_oc =0.48 V and fill factor FF=0.58. Because with sulfur termination the molecules have a dipole that limits inversion of the Si, we also used methyl-terminated monolayers. Even though then we can work, at this point, only with a Hg top contact, without chemical bond to the molecules, we get, using only radiation (∼AM 1.5) collected around the contact, the expected higher V_oc =0.54 V, and respectable 0.8 FF, justifying further MOIS cell development.

After some definitions to establish common ground and illustrate the issues in terms of orders of magnitude, we note that meeting the Energy challenge will require suitable materials. Luckily, we can count on the availability of natural resources for most materials. We briefly illustrate the connection between materials and energy and review the past and the present situations, to focus on the future. We wrap up by arguing that more than bare economics is required to use the fruits of science and technology towards a world order, built on sustainable energy (and materials) resources.

Interfacing functional proteins with solid supports for device applications is a promising route to possible applications in bio-electronics, -sensors, and -optics. Various possible applications of bacteriorhodopsin (bR) have been explored and reviewed since the discovery of bR. This tutorial review discusses bR as a medium for biomolecular optoelectronics, emphasizing ways in which it can be interfaced, especially as a thin film, solid-state current-carrying electronic element.

The preparation of alkoxy monolayers on oxide-free Si (100) and on electronic current transport measurements through junctions that are made up of these monolayers, sandwiched between Si as one electrode and a Hg drop as the other electrode, was reported. Based on the polarized IR spectra, the average tilt angles of the alkoxy and alkyl chains with respect to the surface normal are found to be very similar at 28° and 27° respectively. The monolayer thickness value for the OC12 layer, calculated using an inelastic mean free path of 3.3 nm, is 15∓2Å. The atomic force microscopy (AFM) and contact angle measurements indicate that neither binding chemistry nor molecular length alter the monlayer density. The X-ray photoelectron spectroscopy (XPS) binding energy of the C atom closets to the Si is lower than that of the C atom of the alkyl backbone.

The interfacing of functional proteins with solid supports and the study of related protein-adsorption behavior are promising and important for potential device applications. In this study, we describe the preparation of bacteriorhodopsin (bR) monolayers on Br-terminated solid supports through covalent attachment. The bonding, by chemical reaction of the exposed free amine groups of bR with the pendant Br group of the chemically modified solid surface, was confirmed both by negative AFM results obtained when acetylated bR (instead of native bR) was used as a control and by weak bands observed at around 1610 cm^-1 in the FTIR spectrum. The coverage of the resultant bR monolayer was significantly increased by changing the pH of the purple-membrane suspension from 9.2 to 6.8. Although bR, which is an exceptionally stable protein, showed a pronounced loss of its photoactivity in these bR monolayers, it retained full photoactivity after covalent binding to Br-terminated alkyls in solution. Several characterization methods, including atomic force microscopy (AFM), contact potential difference (CPD) measurements, and UV/Vis and Fourier transform infrared (FTIR) spectroscopy, verified that these bR monolayers behaved significantly different from native bR. Current-voltage (I-V) measurements (and optical absorption spectroscopy) suggest that the retinal chromophore is probably still present in the protein, whereas the UV/Vis spectrum suggests that it lacks the characteristic covalent protonated Schiff base linkage. This finding sheds light on the unique interactions of biomolecules with solid surfaces and may be significant for the design of protein-containing device structures.

Molecular electronics is very much about contacts, and thus understanding of any generic contact effect is essential to its advance. For example, it is still not obvious in how far variations in electrode roughness of macroscopic contacts can lead to rectification. Here we report an investigation of this contact effect on electronic transport properties using metal-insulator-metal planar junctions with a 5 nm thick bacteriorhodopsin-based insulator as model system. We demonstrate that the experimentally observed rectifying behavior is not an intrinsic property of the molecules used, but rather of the local contact quality. Even a slight increase in surface roughness of the bottom electrode gives rise to distinct rectifying behavior in these and, by extrapolation, possibly other molecular junctions.

Forget about 'the' solution. Instead, we need to work toward a strong, sustainable mosaic of many solutions.

The deficit of top scientists pursuing alternative energy (AE)-oriented research is a major problem in meeting the global energy challenge. This paucity has the potential to self-proliferate, as a limited core of experienced researchers will encourage a limited group of talented students and post-docs to seek research opportunities in AE research. To discontinue this pattern, a selected group of 24 of the nation's top, final-year PhD students from all areas of physical, life, and engineering sciences, assembled in a Galilee mountain location, along with 20 senior Israeli and foreign scientists, who are all experts in various aspects of AE. The meeting also included seminars that made students aware of, and knowledgeable about, the energy challenges and related worldwide scientific research. The seminar also allowed them to form their own opinions about directions for fruitful avenues of research for possible new approaches to AE.

A reliable and reproducible method for preparing bacteriorhodopsin (bR)-containing metal-biomolecule-monolayer-metal planar junctions via vesicle fusion tactics and soft deposition of Au top electrodes is reported. Optimum monolayer and junction preparations, including contact effects, are discussed. The electron-transport characteristics of bR-containing membranes are studied systematically by incorporating native bR or artificial bR pigments derived from synthetic retinal analogues, into single solid-supported lipid bilayers. Current-voltage (I-V) measurements at ambient conditions show that a single layer of such bR-containing artificial lipid bilayers pass current in solid electrode/bilayer/solid electrode structures. The current is passed only if retinal or its analogue is present in the protein. Furthermore, the preparations show photoconductivity as long as the retinal can isomerize following light absorption. Optical characterization suggests that the junction photocurrents might be associated with a photochemically induced M-like intermediate of bR. I-V measurements along with theoretical estimates reveal that electron transfer through the protein is over four orders of magnitude more efficient than what would be estimated for direct tunneling through 5 nm of water-free peptides. Our results furthermore suggest that the light-driven proton-pumping activity of the sandwiched solid-state bR monolayer contributes negligibly to the steady-state light currents that are observed, and that the orientation of bR does not significantly affect the observed I-V characteristics.

We show that electron beam evaporation of metal onto a monolayer of organic molecules can yield reproducible electrical contacts, if evaporation is indirect and the sample is on a cooled substrate. The metal contact forms without damaging even the molecules' outermost groups. In contrast, direct evaporation seriously damages the molecules. By comparing molecular effects on metal/molecular layer/GaAs junctions, prepared by indirect evaporation and by other soft contacting methods, we confirm experimentally that Au is not an optimal choice as an evaporated contact metal. We ascribe this to the ease by which Au can diffuse between molecules, something that can, apart from direct contact-substrate connections, lead to undesired and uncontrollable interfacial interactions. Such phenomena are largely absent with Pd as evaporated contact.

Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe₂ and p-Cu(In,Ga)Se₂ films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

Monolayers of alkyl chains, attached-through direct Si-C bonds to Si(111), via phosphonates to GaAs(100) surfaces, or deposited as alkyl-silane monolayers on SiO₂, are investigated by ultraviolet and inverse photoemission spectroscopy and X-ray absorption spectroscopy. Exposure to ultraviolet radiation from a He discharge lamp, or to a beam of energetic electrons, leads to significant damage, presumably associated with radiation- or electron-induced H-abstraction leading to carbon-carbon double-bond formation in the alkyl monolayer. The damage results in an overall distortion of the valence spectrum, in the appearance of (occupied) states above the highest occupied molecular orbital of the alkyl molecule, and in a characteristic (unoccupied state) π* resonance at the edge of the carbon absorption peak. These distortions present a serious challenge for the interpretation of the electronic structure of the monolayer system. We show that extrapolation to zero damage at short exposure times eliminates extrinsic features and allows a meaningful extraction of the density of state of the pristine monolayer from spectroscopy measurements.

Coupling of noble-metal nanoparticles (NPs) into electronics might lead to interesting new avenues in nanoelectronics. It was found that currents through metal//organic (or inorganic) insulator/Au NP monolayer//metal planar junctions (2) are orders of magnitude higher than what is obtained without the NP monolayer (1). (Graph Presented).

A series of p- and n-GaAs-S-C_nH2_n+1 ∥ Hg junctions are prepared, and the electronic transport through them is measured. From current-voltage measurements, we find that, for n-GaAs, transport occurs by both thermionic emission and tunneling, with the former dominating at low forward bias and the latter dominating at higher forward bias. For p-GaAs, tunneling dominates at all bias voltages. By combining the analysis of the transport data with results from direct and inverse photoemission spectroscopy, we deduce an energy band diagram of the system, including the tunnel barrier and, with this barrier and within the Simmons tunneling model, extract an effective mass value of 1.5-1.6m_e for the electronic carriers that cross the junctions, We find that transport is well-described by lowest unoccupied and highest occupied states at 1.3-1.4 eV above and 2.0-2.2 eV below the Fermi level. At the same time, the photoemission data indicate that there are continua of states from the conduction band minimum and the valence band maximum, the density of which varies with energy. On the basis of our results, it appears likely that, for both types of junctions, electrons are the main carrier type, although holes may contribute significantly to the transport in the p-GaAs system.

Studying electron transport (ET) through proteins is hampered by achieving reproducible experimental configurations, particularly electronic contacts to the proteins. The transmembrane protein bacteriorhodopsin (bR), a natural light-activated proton pump in purple membranes of Halobacterium salinarum, is well studied for biomolecular electronics because of its sturdiness over a wide range of conditions. To date, related studies of dry bR systems focused on photovoltage generation and photoconduction with multilayers, rather than on the ET ability of bR, which is understandable because ET across 5-nm-thick, apparently insulating membranes is not obvious. Here we show that electronic current passes through bR-containing artificial lipid bilayers in solid "electrode-bilayer-electrode" structures and that the current through the protein is more than four orders of magnitude higher than would be estimated for direct tunneling through 5-nm, water-free peptides. We find that ET occurs only if retinal or a close analogue is present in the protein. As long as the retinal can isomerize after light absorption, there is a photo-ET effect. The contribution of light-driven proton pumping to the steady-state photocurrents is negligible. Possible implications in view of the suggested early evolutionary origin of halobacteria are noted.

The superior performance of certain polycrystalline (PX) solar cells compared to that of corresponding single-crystal ones has been an enigma until recently. Conventional knowledge predicted that grain boundaries serve as traps and recombination centers for the photogenerated carriers, which should decrease cell performance. To understand if cell performance is limited by grain bulk, grain surface, and/or grain boundaries (GBs), we performed high-resolution mapping of electronic properties of single GBs and grain surfaces in PX p-CdTe/n-CdS solar cells. Combining results from scanning electron and scanning probe microscopies, viz., capacitance, Kelvin probe, and conductive probe atomic force microscopies, and comparing images taken under varying conditions, allowed elimination of topography-related artifacts and verification of the measured properties. Our experimental results led to several interesting conclusions: 1) current is depleted near GBs, while photocurrents are enhanced along the GB cores; 2) GB cores are inverted, which explains GB core conduction. Conclusions (1) and (2) imply that the regions around the GBs function as an extension of the carrier-collection volume, i.e., they participate actively in the photovoltaic conversion process, while conclusion (2) implies minimal recombination at the GB cores; 3) the surface potential is diminished near the GBs; and 4) the photovoltaic and metallurgical junction in the n-CdS/p-CdTe devices coincide. These conclusions, taken together with gettering of defects and impurities from the bulk into the GBs, explain the good photovoltaic performance of these PX cells (at the expense of some voltage loss, as is indeed observed). We show that these CdTe GB features are induced by the CdCl ₂ heat treatment used to optimize these cells in the production process.

Two-dimensional arrangements of molecules can show remarkable cooperative electronic effects. Such effects can serve to achieve direct electronic sensing of chemical and physical processes via electrostatic effects, i.e., without transfer of charge or matter between the locus of sensing and that of detection.

Diodes made by (indirectly) evaporating Au on a monolayer of molecules that are adsorbed chemically onto GaAs, via either disulfide or dicarboxylate groups, show roughly linear but opposite dependence of their effective barrier height on the dipole moment of the molecules. We explain this by Au-molecule (electrical) interactions not only with the exposed end groups of the molecule but also with its binding groups. We arrive at this conclusion by characterizing the interface by in situ UPS-XPS, ex situ XPS, TOF-SIMS, and Kelvin probe measurements, by scanning microscopy of the surfaces, and by current-voltage measurements of the devices. While there is a very limited interaction of Au with the dicarboxylic binding groups, there is a much stronger interaction with the disulfide groups. We suggest that these very different interactions lead to different (growth) morphologies of the evaporated gold layer, resulting in opposite effects of the molecular dipole on the junction barrier height.

The effect of surface treatments on p-CdTe/n-CdS solar cell performance was examined. Adsorption of organic molecules with various magnitudes and directions of the dipole moment on p-CdTe resulted in controlled changes in electron affinity and surface band bending. Similar adsorption on CdTe in state-of-the-art p-CdTe/n-CdS solar cells changes the cell performance, and we explain this by a combination of increased series resistance and changes in light absorption and in cell photovoltage. While at this stage no improvement in performance has been found with these cell structures, which are the result of years of empirical optimization, the molecular effect on the photovoltage shows that it is possible in this way to control the photovoltaic effect at this junction. Separate optimization may well lead to improvement by inserting a dipole layer near the photovoltaic interface. Our results also show that this is even possible when dipole adsorption is performed on the complete polycrystalline thin-film cell.

The electric potential distribution in dye-sensitized solar cells plays a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage (V _∝) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. We show that I-V characteristics in the dark and upon illumination are very well explained by electron tunneling, rather than transport over a Schottky barrier, at this interface. Our calculations, based on tunnel currents, show that a discontinuity of the conduction band at the TiO₂/FTO interface, rather than a built-in electric field, suffices for efficient electron transfer through this interface, and, thus, for efficient operation of this type of solar cell. Clearly, this will hold only if the photoinduced electrostatic potential barrier between the transparent conducting substrate and the mesoporous wide band gap semiconductor drops over a region that is sufficiently narrow to allow efficient tunneling through it.

We show reproducible, stable negative differential resistance (NDR) at room temperature in molecule-controlled, solvent-free devices, based on reversible changes in molecule-electrode interface properties. The active component is the cyclic disulfide end of a series of molecules adsorbed onto mercury. As this active component is reduced, the Hg-molecule contact is broken, and an insulating barrier at the molecule-electrode interface is formed. Therefore, the alignment of the molecular energy levels, relative to the Fermi levels of the electrodes, is changed. This effect results in a decrease in the current with voltage increase as the reduction process progresses, leading to the so-called NDR behavior. The effect is reproducible and repeatable over more than 50 scans without any reduction in the current. The stability of the system, which is in the "solid state" except for the Hg, is due to the molecular design where long alkyl chains keep the molecules aligned with respect to the Hg electrode, even when they are not bound to it any longer.

We review the status of the understanding of dye-sensitized solar cells (DSSC), emphasizing clear physical models with predictive power, and discuss them in terms of the chemical and electrical potential distributions in the device. Before doing so, we place the DSSC in the overall picture of photovoltaic energy converters, reiterating the fundamental common basis of all photovoltaic systems as well as their most important differences.

We compile, compare, and discuss experimental results on low-bias, room-temperature currents through organic molecules obtained in different electrode-molecule-electrode test-beds. Currents are normalized to single-molecule values for comparison and are quoted at 0.2 and 0.5 V function bias. Emphasis is on currents through saturated alkane chains where many comparable measurements have been reported, but comparison to conjugated molecules is also made. We discuss factors that affect the magnitude of the measured current, such as tunneling attenuation factor, molecular energy gap and conformation, molecule/electrode contacts, and electrode material.

Epitaxial films of CuInSe₂ on Si(1 1 1) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by separation and collection of electron beam-induced charge carriers. The movable tip allows scribing of these junction regions and one-sided connection to a contact pad. The junction formation is mainly due to electric field application and, in contrast to what was found to be the case for bulk samples, is not accompanied by a significant temperature rise. The junctions can be explained by symmetrical p/p⁺/n/p⁺/p regions formed within the CuInSe₂ epilayers. The reported method presents a new way for junction patterning in two dimensions.

We show that, for molecules with particularly strong dipoles, their organization into a monomolecular layer can lead to depolarization, something that limits the range over which the substrate's work function can be changed. It appears that, with molecules, depolarization is achieved by changes in orientation and conformation, rather than by charge transfer to the substrate as is common for atomic layers.

We present a concise, although admittedly non-exchaustive, but hopefully didactic review and discussion of some of the central and basic concepts related to the energetics of surfaces and interfaces of solids. This is of particular importance for surfaces and interfaces that involve organic molecules and molecular films. It attempts to pull together different views and terminologies used in the solid state, electrochemistry, and electronic device communities, regarding key concepts of local and absolute vacuum level, surface dipole, work function, electron affinity, and ionization energy. Finally, it describes how standard techniques like photoemission spectroscopy can be used to measure such quantities.

The effect of the presence or absence of chemical bonds between alkyl chain monolayers and the contacts in metal/molecule/semiconductor junctions on the current-voltage characteristics was studied. Three types of junctions were used: Hg/alkylthiols/SiO₂/p-Si, Hg/alkylthiols/p-Si-H, and Hg/alkylsilanes/SiO₂/p-Si. While in the first two junctions current is attenuated exponentially as a function of the length of the alkyl chain, a characteristic behavior of tunneling, the current through the third junction does not reveal such behavior, suggesting that current transport is different in this case. We postulate that this is because in the first two junctions the monolayers are covalently bound to the Hg, while in the third junction, the alkysilanes are anchored to the Si surface only at a few points and are best viewed as not bonded to either side of the junction. The mechanism of current flow through the first two junctions is thought to be through-bond tunneling, and our results indicate that a chemical bond to at least one of the electrode surfaces is essential for this mechanism to operate. Electrostriction causes changes in the current-voltage characteristics of the first two junctions. Evidence is presented suggesting that electrostriction tilts short chains (≤C₁₂), resulting in an additional route to charge transport by tunneling through space. In contrast, long chains (≥C₁₄) do not tilt under pressure; instead, gauche defects are formed in their initial all-trans configuration decreasing the efficiency of electronic coupling through them. The use of p-type Si in this study ensures that at low bias voltages holes are the dominant charge carriers. Holes are found to tunnel more efficiently than electrons in agreement with theoretical predictions.

The mechanism by which dicarboxylic acid molecules adsorb onto ambient-exposed GaAs (1 0 0) surfaces is studied by combining infrared spectroscopy and measurements that are sensitive to changes of the electric potential on the surface. For the latter we used the recently developed molecular controlled semiconductor resistor. By comparing the time dependences of the two measurements we conclude that adsorption proceeds sequentially, with virtually all of the rearrangement of electrical charge in the adsorbates taking place when the first carboxylic group, in each molecule, binds to the surface. This can be understood if charge rearrangement is necessary for forming a close-packed adsorbed layer. Since creation of such a layer, that is made up of molecules with significant molecular dipoles, requires some degree of depolarization of the molecules.

Using Hg/alkyl-chain-monolayer/p-Si devices we find that the type of contact between the chains and the electrodes (chemical bonding or not) is of critical importance for electronic transport across the junctions. As the semiconductor is p-type, the transport is that of holes. In agreement with theory we find that holes tunnel more efficiently through alkyl chains than do electrons.

Grafting organic molecules onto solid surfaces can transfer molecular properties to the solid. We describe how modifications of semiconductor or metal surfaces by molecules with systematically varying properties can lead to corresponding trends in the (electronic) properties of the resulting hybrid (molecule + solid) materials and devices made with them. Examples include molecule-controlled diodes and sensors, where the electrons need not to go through the molecules (action at a distance), suggesting a new approach to molecule-based electronics.

Epitaxial films of CuInSe₂ on Si(111) were modified by the application of an electric field through a movable tip. The electric field induces stable junction regions which are identified by efficient separation and collection of electron beam-induced charge carriers. The movable tip allows for scribing of these junction regions. The junctions can be explained by symmetrical p/p⁺ /n/p⁺ /p regions formed within the CuInSe₂ epilayers. The reported method presents an alternate way for junction patterning in two dimensions.

The onset wavelengths of the surface photovoltage (SPV) in dye-sensitized solar cells (DSSCs) with different mesoporous, wide-band gap electron conductor anode materials, viz., TiO₂ (anatase), Nb₂O₅ (amorphous and crystalline), and SrTiO₃, using the same Ru bis-bipyridyl dye for all experiments, are different. We find a clear dependence of these onset wavelengths on the conduction band edge energies (E_CB) of these oxides. This is manifested in a blue-shift for cells with Nb₂O₅ and SrTiO₃ compared to those with TiO₂. The E_CB levels of Nb₂O₅ and SrTiO₃ are known to be some 200-250 meV closer to the Vacuum level than that of our anatase films, while there is no significant difference between the optical absorption spectra of the dye on the various films. We, therefore, suggest that the blue shift is due to electron injection from excited-state dye levels above the LUMO into Nb₂O₅ and SrTiO₃. Such injection comes about because, in contrast to what is the case for anatase, the LUMO of the adsorbed dye in the solution is below the E_CB of these semiconductors, necessitating the involvement of higher vibrational and/or electronic levels of the dye, with the former being more likely than the latter. While for Nb₂O₅ hot electron injection has been proposed earlier, on the basis of flash photolysis experiments, this is the first evidence for such ballistic electron-transfer involving SrTiO₃, a material very similar to anatase but with a significantly smaller electron affinity. Additional features in the SPV spectra of SrTiO₃ and amorphous Nb₂O₅ (but not in those of crystalline Nb₂O₅) can be understood in terms of hole injection from the dye into the oxide via intraband gap surface states.

We suggest an alternative technique for electroluminescent device fabrication, based on our earlier findings of electric field (E-field)-induced bipolar transistor creation in Si, doped with Li. An external electric field served to induce μm sized electroluminescent device structures in Si, that had been doped prior to E-field application, with Li, and Er via thermal in-diffusion. Such devices exhibit low temperature, near infrared (IR) electroluminescence at ∼ 1.16 and 1.55 μm, corresponding to transitions associated with Li and Er levels, respectively, in the forbidden gap. While Li also creates radiative recombination centers in Si, the Er-based IR radiation is the most desirable one. At the same time Li-doping is what makes E-field-induced p-n junction fabrication possible.

We explore chemical and physical limits to semiconductor device miniaturization. Minimal sizes for space charge-based devices can be estimated from Debye screening lengths of the materials used. Because a doped semiconductor can be viewed as a mixed electronic-ionic conductor, with the dopants as mobile ions, dopant intermixing across a p/n junction presents a chemical limit. Given a desired lifetime, simple relations can be derived between size and dopant intermixing for reverse- or forward-biased devices. Mostly, conditions for significant dopant mobility are far from those where the material is used. Thus, it is generally held that elemental and III-V-based p-n junctions are immune to this problem and persist because of kinetic stability. Indeed, we find this to be so for Si in the foreseeable future, but not for III-V- and II-VI-based ones. The limitation is more severe in structures with very thin undoped layers sandwiched between doped ones or vice versa, where even 1% intermixing can be critical. This decreases lifetime nearly 100 times. For example, for structures containing a 10 nm critical dimension, none of the components can have an average diffusion coefficient higher than 10^-24 cm²/s for a 3 year lifetime. Ways to overcome or mitigate this limitation are indicated.

The recent literature regarding the stability of CdTe/CdS photovoltaic cells (as distinguished from modules) is reviewed. Particular emphasis is given to the role of Cu as a major factor that can limit the stability of these devices. Cu is often added to improve the ohmic contact to p-CdTe and the overall cell photovoltaic performance. This may be due to the formation of a Cu₂Te/CdTe back contact. Excess Cu also enhances the instability of devices when under stress. The Cu, as Cu⁺, from either Cu₂Te or other sources, diffuses via grain boundaries to the CdTe/CdS active junction. Recent experimental data indicate that Cu, Cl and other diffusing species reach (and accumulate at) the CdS layer, which may not be expected on the basis of bulk diffusion. These observations may be factors in cell behavior and degradation, for which new mechanisms are suggested and areas for future study are highlighted. Other possible Cu-related degradation mechanisms, as well as some non-Cu-related issues for cell stability are discussed.

We explain the cause for the photocurrent and photovoltage in nanocrystalline, mesoporous dye-sensitized solar cells, in terms of the separation, recombination, and transport of electronic charge as well as in terms of electron energetics. On the basis of available experimental data, we confirm that the basic cause for the photovoltage is the change in the electron concentration in the nanocrystalline electron conductor that results from photoinduced charge injection from the dye. The maximum photovoltage is given by the difference in electron energies between the redox level and the bottom of the electron conductor's conduction band, rather than by any difference in electrical potential in the cell, in the dark. Charge separation occurs because of the energetic and entropic driving forces that exist at the dye/electron conductor interface, with charge transport aided by such driving forces at the electron conductor/contact interface. The mesoporosity and nanocrystallinity of the semiconductor are important not only because of the large amount of dye that can be adsorbed on the system's very large surface, but also for two additional reasons: (1) it allows the semiconductor small particles to become almost totally depleted upon immersion in the electrolyte (allowing for large photovoltages), and (2) the proximity of the electrolyte to all particles makes screening of injected electrons, and thus their transport, possible.

The chemical effects of oxygenation of Cu(In,Ga)Se₂ (CIGS) interfaces are analyzed and are shown to involve passivation of Se deficiencies and Cu removal. The former effect is beneficial at grain boundaries, but detrimental at the CdS/CIGS interface. The latter effect is purely detrimental. Na and chemical bath deposition (CBD) treatments are shown to isolate the `good' oxygenation effect from the `bad' ones. Na is shown to promote oxygenation already before the deposition of the buffer and window layers, which allows a maximization of the benefits of Se deficiency passivation and a minimization of Cu removal. Next, the CBD of the CdS buffer layer restores the interface charge, due to creation of Cd_Cu interface donors and possibly a removal of O_Se interface acceptors. This highlights the crucial role that interface redox engineering plays in optimizing the performance of CIGS-based solar cells.

Geringe Konzentrationen von NO in physiologischen Pufferlösungen (1 ppm, ca. 3 μM) lassen sich mit dem gezeigten maßgeschneiderten molekularen Zweikomponentensystem ein pinzettenartig von einem organischen Liganden gehaltenes Eisen(III)porphyrin nachweisen, das mit einer Seite an einen Detektor auf GaAsBasis gekoppelt ist. Bindet NO an das Eisen(III)porphyrin, ändert sich die Stromstärke.

CuInSe₂ single crystals prepared by the traveling heater method were investigated by synchrotron X-ray diffraction. Three sample types were investigated: as-grown, n-type; samples converted to p-type by annealing with Se; and samples subjected to an electric field leading to n⁺/p/n transistor formation. Clear evidence for the thermally-assisted electromigration mechanism proposed for electric-field induced transistor formation was observed. The observations provide important support for the model of ion migration-mediated self-stabilization of CuInSe₂-based solar cells.

We present a simple, compact, and robust arrangement for surface photovoltage measurements of free semiconductor surfaces immersed in liquids. It is based on the classical Kelvin probe arrangement, where the semiconductor sample is put in a liquid-containing, electrically insulating vessel, with an optically transparent window, situated between the sample and the Kelvin probe. At the price of permitting relative, rather than absolute, contact potential difference values, this modification enables easy, routine surface photovoltage measurements of semiconductors in any kind of liquid ambient. The validity and efficiency of this approach are demonstrated by surface photovoltage spectra obtained from the p-InP(100) surface in various liquid etchants.