Publications

The fractional quantum Hall (FQH) effect provides a paradigmatic example of a topological phase of matter. FQH edges are theoretically described via models belonging to the class of chiral Luttinger liquid (CLL) theories [1 (Wen, 2007)]. These theories predict exotic properties of the excitations, such as fractional charge and fractional statistics. Despite theoretical confidence in this description and qualitative experimental confirmations, quantitative experimental evidence for CLL behaviour is scarce. In this work, we study tunnelling between edge modes in the quantum Hall regime at the filling factor ν=1/3. We present measurements at different system temperatures and perform a novel scaling analysis of the experimental data, originally proposed in Ref. [2 (Schiller et al., 2022)]. Our analysis shows clear evidence of CLL breakdown - above a certain energy scale. In the low-energy regime, where the scaling behaviour holds, we extract the property called the scaling dimension and find it heavily renormalized compared to naïve CLL theory predictions. Our results show that decades-old experiments contain a lot of previously overlooked information that can be used to investigate the physics of quantum Hall edges. In particular, we open a road to quantitative experimental studies of (a) scaling dimension renormalization in quantum point contacts and (b) CLL breakdown mechanisms at an intermediate energy scale, much smaller than the bulk gap.

The remarkable Cooper-like pairing phenomenon in the Aharonov-Bohm interference of a Fabry-Perot interferometer - operating in the integer quantum Hall regime - remains baffling. Here, we report the interference of paired electrons employing "interface edge modes."These modes are born at the interface between the bulk of the Fabry-Perot interferometer and an outer gated region tuned to a lower filling factor. Such a configuration allows toggling the spin and the orbital of the Landau level of the edge modes at the interface. We find that electron pairing occurs only when the two modes (the interfering outer and the first inner) belong to the same spinless Landau level.

Fractional quantum Hall states have long been predicted to be a testing ground of fractional—anyonic—exchange statistics. These topological states, which can have either an Abelian or non-Abelian character, harbour quasiparticles with fractional charges. The charge of the quasiparticles can be measured by shot noise measurements, whereas their quantum statistics can be revealed by appropriate interference experiments. The multipath Fabry–Pérot electronic interferometer is easier to fabricate, but it is often plagued by Coulomb interactions, area breathing with the magnetic field and fluctuating charges. Yet, recent experiments with an adequately screened Fabry–Pérot interferometer allowed the observation of anyonic interference at a bulk filling factor of ν = 1/3. Here we demonstrate the interference and braiding of anyons in an interaction-free two-path Mach–Zehnder interferometer tuned to bulk filling of ν = 2/5 with an outermost ν = 1/3 edge mode. Interference with this mode reveals a phase dependence that corresponds to the predicted anyonic braiding. This proves that a Mach–Zehnder interferometer is a powerful tool that probes the quantum statistics of complex anyonic states.

The topological order of a quantum Hall state is mirrored by the gapless edge modes owing to bulk-edge correspondence. The state at the filling of ν = 5/2, predicted to host non-abelian anyons, supports a variety of edge modes (integer, fractional, neutral). To ensure thermal equilibration between the edge modes and thus accurately determine the state’s nature, it is advantageous to isolate the fractional channel (1/2 and neutral modes). In this study, we gapped out the integer modes by interfacing the ν = 5/2 state with integer states ν = 2 and ν = 3 and measured the thermal conductance of the isolated-interface channel. Our measured half-quantized thermal conductance confirms the non-abelian nature of the ν = 5/2 state and its particle-hole Pfaffian topological order. Such an isolated channel may be more amenable to braiding experiments.

According to the bulk-edge correspondence principle, the physics of the gapless edge in the quantum Hall effect determines the topological order in the gapped bulk. As the bulk is less accessible, the last two decades saw the emergence of several experimental techniques that invoke the study of the compressible edge. We review the properties of the edge, and describe several experimental techniques that include shot noise and thermal noise measurements, interferometry, and energy (thermal) transport at the edge. We pay special attention to the filling factor 5/2 in the first excited Landau level (in two-dimensional electron gas in GaAs), where experimental evidence of a non-Abelian topological order was found. A brief discussion is devoted to recent interferometry experiments that uncovered unexpected physics in the integer quantum Hall effect. The article also addresses the theory of edge states, for systems with Abelian and non-Abelian topological orders.

Topological edge-reconstruction occurs in hole-conjugate states of the fractional quantum Hall effect. The frequently studied filling factor, ν = 2/3, was originally proposed to harbor two counter-propagating modes: a downstream v = 1 and an upstream v = 1/3. However, charge equilibration between these two modes always led to an observed downstream v = 2/3 charge mode accompanied by an upstream neutral mode. Here, we present an approach to synthetize a v = 2/3 edge mode from its basic counter-propagating charged constituents, allowing a controlled equilibration between the two counter-propagating charge modes. This platform is based on a carefully designed double-quantum-well, which hosts two populated electronic sub-bands (lower and upper), with corresponding filling factors, v _l and v _u . By separating the 2D plane to two gated intersecting halves, each with different fillings, counter-propagating chiral modes can be formed along the intersection line. Equilibration between these modes can be controlled with the top gates’ voltage and the magnetic field.

A novel nonlocal supercurrent, carried by quartets, each consisting of four electrons, is expected to appear in a voltage-biased three-terminal Josephson junction. This supercurrent results from a nonlocal Andreev bound state (ABS), formed among three superconducting terminals. While in a two-terminal Josephson junction the usual ABS, and thus the dc Josephson current, exists only in equilibrium, the ABS, which gives rise to the quartet supercurrent, persists in the nonlinear regime. In this work, we report such resonance in a highly coherent three-terminal Josephson junction made in an InAs nanowire in proximity to an aluminum superconductor. In addition to nonlocal conductance measurements, cross-correlation measurements of current fluctuations provided a distinctive signature of the quartet supercurrent. Multiple device geometries had been tested, allowing us to rule out competing mechanisms and to establish the underlying microscopic origin of this coherent nondissipative current.

Topological states of matter are characterized by topological invariants, which are physical quantities whose values are quantized and do not depend on the details of the system (such as its shape, size and impurities). Of these quantities, the easiest to probe is the electrical Hall conductance, and fractional values (in units of e ²/h, where e is the electronic charge and h is the Planck constant) of this quantity attest to topologically ordered states, which carry quasiparticles with fractional charge and anyonic statistics. Another topological invariant is the thermal Hall conductance, which is harder to measure. For the quantized thermal Hall conductance, a fractional value in units of κ ₀ (κ ₀ = π ²k _B²/(3h), where k _B is the Boltzmann constant) proves that the state of matter is non-Abelian. Such non-Abelian states lead to ground-state degeneracy and perform topological unitary transformations when braided, which can be useful for topological quantum computation. Here we report measurements of the thermal Hall conductance of several quantum Hall states in the first excited Landau level and find that the thermal Hall conductance of the 5/2 state is compatible with a half-integer value of 2.5κ ₀, demonstrating its non-Abelian nature.

The quantum of thermal conductance of ballistic (collisionless) onedimensional channels is a unique fundamental constant1. Although the quantization of the electrical conductance of one-dimensional ballistic conductors has long been experimentally established2, demonstrating the quantization of thermal conductance has been challenging as it necessitated an accurate measurement of very small temperature increase. It has been accomplished for weakly interacting systems of phonons(3,4), photons(5) and electronic Fermi liquids(6-8); however, it should theoretically also hold in strongly interacting systems, such as those in which the fractional quantum Hall effect is observed. This effect describes the fractionalization of electrons into anyons and chargeless quasiparticles, which in some cases can be Majorana fermions(2). Because the bulk is incompressible in the fractional quantum Hall regime, it is not expected to contribute substantially to the thermal conductance, which is instead determined by chiral, one-dimensional edge modes. The thermal conductance thus reflects the topological properties of the fractional quantum Hall electronic system, to which measurements of the electrical conductance give no access(9-12). Here we report measurements of thermal conductance in particle-like (LaughlinJain series) states and the more complex (and less studied) hole-like states in a high-mobility two-dimensional electron gas in GaAsAlGaAs heterostructures. Hole-like states, which have fractional Landau-level fillings of 1/2 to 1, support downstream charged modes as well as upstream neutral modes(13), and are expected to have a thermal conductance that is determined by the net chirality of all of their downstream and upstream edge modes. Our results establish the universality of the quantization of thermal conductance for fractionally charged and neutral modes. Measurements of anyonic heat flow provide access to information that is not easily accessible from measurements of conductance

This Rapid Communication was motivated by the quest for observing interference of fractionally charged quasiparticles. Here, we study the behavior of an electronic Mach-Zehnder interferometer at the integer quantum Hall effect regime at filling factors greater than 1. Both the visibility and the velocity were measured and found to be highly correlated as a function of the filling factor. As the filling factor approached unity, the visibility quenched, not to recover for filling factors smaller than unity. Alternatively, the velocity saturated around a minimal value at the unity filling factor. We highlight the significant role interactions between the interfering edge and the bulk play as well as that of the defining potential at the edge. Shot-noise measurements suggest that phase averaging (due to phase randomization), rather than single-particle decoherence, is likely to be the cause of the dephasing in the fractional regime.

The fractional quantum Hall effect is a canonical example of topological phases. While electric currents flow downstream in edge modes, neutral edge modes, observed only in hole-conjugate states and in v 1/2=5/2, flow upstream. It is believed that the latter transport results from multiple counter-propagating channels-mixed by disorder that is accompanied by Coulomb interaction. Here we report on sensitive shot noise measurements that reveal unexpected presence of neutral modes in non-hole-conjugate fractional states; however, not in the integer states. Furthermore, the incompressible bulk is also found to allow energy transport. While density reconstructions along the edge may account for the energy carrying edge modes, the origin of the bulk energy modes is unidentified. The proliferation of neutral modes changes drastically the accepted transport picture of the fractional quantum Hall effects. Their apparent ubiquitous presence may explain the lack of interference of fractional quasiparticles-preventing observation of fractional statistics.

We report an observation, via sensitive shot noise measurements, of charge fractionalization of chiral edge electrons in the integer quantum Hall effect regime. Such fractionalization results solely from interchannel Coulomb interaction, leading electrons to decompose to excitations carrying fractional charges. The experiment was performed by guiding a partitioned current carrying edge channel in proximity to another unbiased edge channel, leading to shot noise in the unbiased edge channel without net current, which exhibited an unconventional dependence on the partitioning. The determination of the fractional excitations, as well as the relative velocities of the two original (prior to the interaction) channels, relied on a recent theory pertaining to this measurement. Our result exemplifies the correlated nature of multiple chiral edge channels in the integer quantum Hall effect regime.

Majorana fermions are the only fermionic particles that are expected to be their own antiparticles. Although elementary particles of the Majorana type have not been identified yet, quasi-particles with Majorana-like properties, born from interacting electrons in the solid, have been predicted to exist. Here, we present thorough experimental studies, backed by numerical simulations, of a system composed of an aluminium superconductor in proximity to an indium arsenide nanowire, with the latter possessing strong spin-orbit coupling and Zeeman splitting. An induced one-dimensional topological superconductor, supporting Majorana fermions at both ends, is expected to form. We concentrate on the characteristics of a distinct zero-bias conductance peak and its splitting in energy - both appearing only with a small magnetic field applied along the wire. The zero-bias conductance peak was found to be robustly tied to the Fermi energy over a wide range of system parameters. Although not providing definite proof of a Majorana state, the presented data and the simulations support its existence.

Upstream neutral modes, counter propagating to charge modes and carrying energy without net charge, had been predicted to exist in some of the fractional quantum Hall states and were recently observed via noise measurements. Understanding such modes will assist in identifying the wavefunction of these states, as well as shedding light on the role of Coulomb interactions within edge modes. Here, operating mainly in the ν=2/3 state, we place a quantum dot a few micrometres upstream of an ohmic contact, which serves as a 'neutral modes source'. We show that the neutral modes heat the input of the dot, causing a net thermo-electric current to flow through it. Heating of the electrons leads to a decay of the neutral mode, manifested in the vanishing of the thermo-electric current at T>110 mK. This set-up provides a straightforward method to investigate upstream neutral modes without turning to the more cumbersome noise measurements.

The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single- to two-subband occupancy. In 80 and 60 nm wells, the quantum Hall state at 5/2 filling of the lowest subband is observed even when the second subband is occupied. In a 50 nm well, the 5/2 state vanishes upon second subband population. We attribute this distinct behavior to the width dependence of the capacitive energy for intersubband charge transfer and of the overlap of the subband probability densities.

Charged excitations in the fractional quantum Hall effect are known to carry fractional charges, as theoretically predicted and experimentally verified. Here we report on the dependence of the tunneling quasiparticle charge, as determined via highly sensitive shot noise measurements, on the measurement conditions, in the odd denominators states v=1/3 and v=7/3, and in the even denominator state v=5/2. In particular, for very weak backscattering probability and sufficiently small excitation energies (temperature and applied voltage), tunneling charges across a constriction were found to be significantly higher than the theoretically predicted fundamental quasiparticle charges.

A density-tunable GaAs-AlGaAs heterostructure is used to study the density dependence of the filling factor ν= 5 2 and other fractional and reentrant integer quantum-Hall states in the second Landau level. The activation energy at ν= 5 2 can be determined for densities between 1.3 and 2.7× 1011 / cm2 and reaches up to 310 mK. The 5/2 energy gap is calculated numerically, including finite width and Landau-level-mixing corrections, both as a function of electron density. The discrepancy between theory and experiment increases moderately with density and reaches about 1.5 K at the highest density. We argue that the activation energy is strongly influenced by disorder from ionized donors and attribute this to the surprisingly large size of the 5/2 quasiparticles. We find that the quasiparticles have a diameter of at least 12 times the magnetic length or 150 nm at a magnetic field of 4 T. Implications for heterostructure design are discussed.

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter (∼10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.

We report on the phase measurements on a quantum dot containing a single electron in the Kondo regime. Transport takes place through a single orbital state. Although the conductance is far from the unitary limit, we measure directly, for the first time, a transmission phase as theoretically predicted of π/2. As the dot's coupling to the leads is decreased, with the dot entering the Coulomb blockade regime, the phase reaches a value of π. Temperature shows little effect on the phase behavior in the range 30-600 mK, even though both the two-terminal conductance and amplitude of the Aharonov-Bohm oscillations are strongly affected. These results also suggest that previous phase measurements involved transport through more than a single level.

The fractional quantum Hall effect, where plateaus in the Hall resistance at values of h/νe² coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. (Here h is Planck's constant, ν the filling factor and e the electron charge.) Current flows along the sample edges and is carried by charged excitations (quasiparticles) whose charge is a fraction of the electron charge. Although earlier research concentrated on odd denominator fractional values of ν, the observation of the even denominator ν = 5/2 state sparked much interest. This state is conjectured to be characterized by quasiparticles of charge e/4, whose statistics are 'non-abelian'-in other words, interchanging two quasiparticles may modify the state of the system into a different one, rather than just adding a phase as is the case for fermions or bosons. As such, these quasiparticles may be useful for the construction of a topological quantum computer. Here we report data on shot noise generated by partitioning edge currents in the ν = 5/2 state, consistent with the charge of the quasiparticle being e/4, and inconsistent with other possible values, such as e/2 and e. Although this finding does not prove the non-abelian nature of the ν = 5/2 state, it is the first step towards a full understanding of these new fractional charges.

A consistent approach in forming the 0.7 structure by using a quantum dot rather than a quantum point contact is demonstrated. With this scheme, it was possible to tune on and off the 0.7 structure. The 0.7 structure continuously evolved into a normal integer conductance plateau by varying the tuning condition. Unlike the conventional 0.7 plateau, the new 0.7 structure was observed even at low electron temperatures down to 100 mK, with unprecedented flatness. From our results, it is concluded that electron interference should be taken into consideration to explain the 0.7 structure.

Resonant tunneling through two identical potential barriers renders them transparent, as particle trajectories interfere coherently. Here we realize resonant tunneling in a quantum dot (QD), and show that detection of electron trajectories renders the dot nearly insulating. Measurements were made in the integer quantum Hall regime, with the tunneling electrons in an inner edge channel coupled to detector electrons in a neighboring outer channel, which was partitioned. Quantitative analysis indicates that just a few detector electrons completely dephase the QD.

Fractionally charged quasiparticles in edge states, are expected to condense to a chiral Luttinger liquid (CLL). We studied their condensation by measuring the conductance and shot noise due to an artificial backscatterer embedded in their path. At sufficiently low-temperatures backscattering events were found to be strongly correlated, producing a highly nonlinear current-voltage characteristic and a nonclassical shot noise—both are expected in a CLL. When, however, the impinging beam of quasiparticles was made dilute, either artificially via an additional weak backscatterer or by increasing the temperature, the resultant outgoing noise was classical, indicating the scattering of independent quasiparticles. Here, we study in some detail this surprising crossover from correlated particle behavior to an independent behavior, as a function of beam dilution and temperature.

Shot noise measurements have been used to measure the charge of quasiparticles in the fractional quantum Hall (FQH) regime. To induce shot noise in an otherwise noiseless current of quasiparticles, a barrier is placed in its path to cause weak backscattering. The measured shot noise is proportional to the charge of the quasiparticles; for example, at filling factor v = 1/3, noise corresponding to q = e/3 appears. For increasingly opaque barriers, the measured charge increases monotonically, approaching q = e asymptotically. It was therefore believed that only electrons, or alternatively, three bunched quasiparticles can tunnel through high-potential barriers encountered by a noiseless current of quasiparticles. Here we investigate the interaction of e/3 quasiparticles with a strong barrier in FQH samples and find that bunching of quasiparticles in the strong backscattering limit depends on the average dilution of the quasiparticle current. For a very dilute current, bunching ceases altogether and the transferred charge approaches q = e/3. This surprising result demonstrates that quasiparticles can tunnel individually through high-potential barriers originally thought to be opaque for them.

Transmission phase of a quantum dot (QD) with Kondo correlation near the unitary limit was studied. It was observed that the transition phase was linear when the Fermi energy was scanned through a spin degenerate energy level of the QD. The phase in the Coulomb Blockade regime was however strongly affected by a preexistence of Kondo correlation.

We measured the phase evolution of electrons as they traverse a quantum dot (QD) formed in a two-dimensional electron gas that serves as a localized spin. The traversal phase, determined by embedding the QD in a double path electron interferometer and measuring the quantum interference of the electron wave functions manifested by conductance oscillation as a function of a weak magnetic field, evolved by π radians, a range twice as large as theoretically predicted. As the correlation weakened, a gradual transition to the familiar phase evolution of a QD was observed. The specific phase evolution observed is highly sensitive to the onset of Kondo correlation, possibly serving as an alternative fingerprint of the Kondo effect.

In this chapter we review recent developments in both theoretical and experimental aspects of quantum shot noise. We discuss the properties of shot noise in systems of various sizes from mesoscopic, ballistic, systems to classical diffusive conductors. In particular we consider the effect of the elctron's Fermi statistics on shot noise. In addision, we discuss shot noise as a tool for charge measurements. The Fractional Quantum Hall system which gives rise to an appearance of new elementary excitations which carry a smaller charge, hence resulting in a suppressed shot noise.

The results of an organized study of low temperature two-dimensional electron gas (2DEG) mobility in high purity selectively doped GaAs/AlGaAs heterostructures are presented. Both technological factors and structure design that determine the mobility are discussed. By varying structure parameters, the various scattering mechanisms are identified. Optimizing the structure leads to a record 2DEG mobility of 14.4 × 10⁶ cm²/Vs at 0.1 K.

We report the fabrication and testing of an all-GaAs/AlGaAs hybrid readout circuit operating at 77 K designated for use with an GaAs/AlGaAs background-limited quantum-well infrared photodetector focal plane array (QWIP FPA). The circuit is based on a direct injection scheme, using specially designed cryogenic GaAs/AlGaAs MODFET's and a novel n+-GaAs/A!GaAs/n+-GaAs semiconductor capacitor, which is able to store more than 15 000 electrons/jum2 in a voltage range of ±0.7 V. The semiconductor capacitor shows little voltage dependence, small frequency dispersion, and no hysteresis. We have eliminated the problem of low-temperature degradation of the MODFET I-V characteristics and achieved very low gate leakage current of about 100 fA in the subthreshold regime. The MODFET electrical properties including input-referred noise voltage and subthreshold transconductance were thoroughly tested. Input-referred noise voltage as low as 0.5 /uV/vTlz at 10 Hz was measured for a 2 x 30 fim2 gate MODFET. We discuss further possibilities for monolithic integration of the developed devices.

The transport properties of electronic devices are usually characterized on the basis of conductance measurements. Such measurements are adequate for devices in which transport occurs incoherently, but for very small devices- such as quantum dots-the wave nature of the electrons plays an important role. Because the phase of an electron's wavefunction changes as it passes through such a device, phase measurements are required to characterize the transport properties fully. Here we report the results of a double-slit interference experiment which permits the measurement of the phase-shift of an electron traversing a quantum dot. This is accomplished by inserting the quantum dot into one arm of an interferometer, thereby introducing a measurable phase shift between the arms. We find that the phase evolution within a resonance of the quantum dot can be accounted for qualitatively by a model that ignores the interactions between the electrons within the dot. Although these electrons must interact strongly, such interactions apparently have no observable effect on the phase. On the other hand, we also find that the phase behaviour is identical for all resonances, and that there is a sharp jump of the phase between successive resonance peaks. Adequate explanation of these features may require a model that includes interactions between electrons.

Wide band shot noise, associated with d.c. current flow through a quantum point contact (QPC), is measured in the microwave frequency range of 8-18 GHz. As the number of conducting channels in the QPC changes, the noise power oscillates, with almost zero value at the conductance plateaus. Consistent with existing theories the noise peaks depend linearly on the d.c. current. Surprisingly, however, in the pinch off region, where QPC is expected to behave as a classical injector, we find strong noise suppression, possibly mediated by the Coulomb interaction in the QPC region.

Via a novel interference experiment, which measures magnitude and phase of the transmission coefficient through a quantum dot in the Coulomb regime, we prove directly, for the first time, that transport through the dot has a coherent component. We find the same phase of the transmission coefficient at successive Coulomb peaks, each representing a different number of electrons in the dot; however, as we scan through a single Coulomb peak we find an abrupt phase change of . The observed behavior of the phase cannot be understood in the single particle framework.

Dephasing of ballistic electrons is measured as a function of both temperature and Fermi energy in a high-mobility two-dimensional electron gas. We find a qualitative agreement between the measured phase-breaking length and the theoretical prediction for the electron-electron scattering length using the value of E(F) measured with large-area Hall bars. A good quantitative agreement is obtained when a local value of E(F), measured via on-chip magnetic focusing, is used. The good agreement between the measured phase-breaking length and the theoretical electron-electron scattering length strongly suggests that these two quantities are the same in the ballistic regime.

We present a controlled interference experiment of ballistic electrons in a two-dimensional electron gas. While the phase along one interfering path is kept constant, the phase along the second interfering path is varied using a biased metallic gate, thereby enabling a direct measurement of the phase accumulated underneath this gate. Surprisingly, in addition to the expected oscillatory signal measured as a function of the gate bias, we observe a longer period signal with approximately half the expected frequency.

The long hot-electron mean free path observed by Sivan, Heiblum, and Umbach in high-mobility 2D electron-gas heterostructures is explained by electron transport in the second subband. Our estimates show that the mean free path in the second subband is longer by 2 orders of magnitude than that in the first subband. New magnetic-focusing measurements reveal hot-electron velocities lower than the Fermi velocity, as expected for a higher-subband transport. The electrostatic potential near a biased constriction used as the hot-electron injector is shown to induce nonadiabatic intersubband transfer.

Current‐voltage characteristics of nGaAs‐iAlxGa1−xAs‐nGaAs heterojunction barriers grown on (100) substrates have been measured under uniaxial stress along 〈100〉 at 77 K. The results show that thermionic emission current through longitudinal X valleys becomes dominant over Fowler–Nordheim tunneling current through Γ or transverse X valleys, as stress increases. From the stress‐dependent thermionic emission current the rate of change with stress of the band‐edge energy difference between Γ in GaAs and longitudinal X in AlGaAs is deduced to be 14±2 meV/kbar, which leads to an X‐valley shear deformation potential of 9.6±1.8 eV.

Hot-electron transport in a 2D electron gas is investigated as a function of the electron’s excess energy. The inelastic mean free path at energies below the longitudinal-optical-phonon energy is found to be an order of magnitude longer than theoretical predictions. For higher injection energies, LO-phonon emission is found to be the main scattering mechanism. This, together with the ballistic motion for energies below the phonon energy, leads to previously unobserved periodic oscillations in the maximum energy of hot electrons as a function of their injection energy.

We report an observation of a single optical phonon emission by monoenergetic hot electrons traversing thin n+-type GaAs and thin undoped AlGaAs layers in times much shorter than the classical phonon period. This was done by injecting ballistic electrons into the thin layers with energy around the threshold for optical phonon emission and monitoring their exit energy. We estimate a scattering time of ≃200 fsec for electrons with energy of about 85 meV in n+-type GaAs, and ≃550 fsec for 40-meV electrons in undoped AlGaAs.

Selectively doped inverted heterojunctions containing a two‐dimensional electron gas were used as a sensitive vehicle for monitoring dry processing damage. We found that the electron sheet concentration, strongly dependent on the total number of carriers in the GaAs cap layer, and the mobilities were significantly depressed even for very short exposures to low‐voltage helium plasmas. Argon, which caused less degradation than helium, was found to increase the sheet carrier concentration and hence the mobility after prolonged exposure. The damage mechanism responsible for the carrier loss in both cases is most likely the production of traps. The subsequent carrier increase seen for the argon case is probably attributable to the creation of a very thin donorlike damage layer on the surface of the GaAs cap layer.

Inverted heterointerfaces (GaAs on AlGaAs), which are basic constituents of all quantum wells and superlattices, have been significantly improved using electron diffraction and a refined molecular beam epitaxy growth procedure. Utilizing them in a novel structure allowed the variation of the electron density over a wide range, with peak mobilities of 4×105 cm2/V s. The continuously variable electron density allowed comparison to a theoretical analysis of the low‐temperature scattering mechanisms, and their relation to the growth process, establishing the importance of interface charges and roughness. High‐mobility samples were used to observe the quantum Hall effect with varying carrier concentrations in a single structure.

We have used reflection high‐energy electron diffraction (RHEED) to study the surface recovery of AlGaAs under different conditions. A modified process for growth interruptions was then introduced, where a GaAs monolayer was grown at each growth stop, and the arsenic flux was turned off during the low‐temperature phase of growth interruptions. Selectively doped inverted heterojunctions were grown using the modified growth interruptions together with low‐growth temperature (to avoid Si and impurity segregation). This combined process gave reproducible electron mobilities as high as 460 000 cm2/V s with sheet carrier concentration of 2×10_11 cm−2 at 4.2 K.

Thin layers of Mo and Nb, 100–400 Å thick, were deposited onto clean (100) and (1̄1̄1̄)GaAs substrates under ultrahigh vacuum conditions in a molecular‐beam epitaxy system, at slow rates and at relatively low temperatures. The microstructure of the films and the orientation relationship with the substrates were determined by in situ reflection high‐energy electron diffraction, by transmission electron microscopy, and by grazing‐incidence x‐ray diffraction. In spite of the large lattice mismatch to GaAs (11% for Mo and 17% for Nb) and the low deposition temperatures(

Thin layers of Nb, 100–400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high‐energy electron diffraction, and after deposition by transmission electron microscopy and grazing‐incidence x‐ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40–400 °C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170 °C. Changing the substrate temperature from the optimum value of ∼170 °C in either direction resulted in a gradual deterioration of the epitaxy.

The construction and performance of electrostatic electron gun evaporators, placed in a molecular beam epitaxy system are described. Minimizing electron emittance led to an evaporation of refractory metals at a vacuum level of 2×10−10–2×10−9 Torr.

Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal‐GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.

Persistent photoconductivity (PPC) is studied in modulation doped AlGaAs–GaAs heterostructures in the conductivity parallel to the heterojunctions. The results indicate that the macroscopic fields of the heterojunction and traps primarily in the GaAs rather than AlGaAs are responsible for the phenomenon. PPC is also reported in n+ GaAs–undoped AlGaAs–n+ GaAs heterostructures for current perpendicular to the heterojunctions.

Heavy Si doping of GaAs and AlGaAs grown by molecular beam epitaxy has been studied. By using a slow growth rate of 1000 Å/h, the electron concentration obtained for GaAs was 1.1×1019 cm−3, which is higher than the previously reported limit of 5×1018 cm−3. The accumulation of excess Si near the surfaces of GaAs and AlGaAs has been identified by secondary ion mass spectroscopy. A Si‐induced 3×2 surface structure has been observed, and the influence of arsenic to gallium flux ratio on the surface morphology is discussed. Photoluminescence spectra of the doped layers are presented.

We describe a new technique for controlled oxide growth using a directed low‐energy ion beam. The technique is evaluated by fabricating Ni‐oxide‐Ni and Cr‐oxide‐Ni tunneling junctions, using oxygen ion beams with energies ranging from 30 to 180 eV. High ion current densities are achieved at these low energies by replacing the conventional dual grid extraction system of the ion source with a single fine mesh grid. Junction resistance decreases with increasing ion energy, and oxidation time dependence shows a characteristic saturation, both consistent with a process of simultaneous oxidation and sputter etching, as in the rf oxidation process. In contrast with rf oxidized junctions, however, ion beam oxidized junctions contain less contamination by backsputtering, and the quantitative nature of ion beam techniques allows greater control over the growth process.