Publications

The Quantum Hall Effect (QHE) is the prototypical realization of a topological state of matter. It emerges from a subtle interplay between topology, interactions, and disorder. The disorder enables the formation of localized states in the bulk that stabilize the quantum Hall states with respect to the magnetic field and carrier density. Still, the details of the localized states and their contribution to transport remain beyond the reach of most experimental techniques. Here, we describe an extensive study of the bulk's heat conductance. Using a novel 'multi-terminal' device, we separate the longitudinal thermal conductance (due to bulk's contribution) κxxT from the two-terminal value κ2TT, by eliminating the contribution of the edge modes. We find that when the field is tuned away from the conductance plateau center, the electronic states of the bulk conduct heat efficiently while the bulk remains electrically insulating. For fragile fractional states, such as the non-Abelian ν=5/2, we observe a finite κxxT throughout the plateau. We identify the localized states as the cause of the finite κxxT and propose a theoretical model which qualitatively explains our findings.

The remarkable Cooper-like pairing phenomenon in the Aharonov-Bohm interference of a Fabry-Perot interferometer (FPI)−operating in the integer quantum Hall regime−remains baffling. Here, we report the interference of paired electrons employing 'interface edge modes'. These modes are born at the interface between the bulk of the FPI and an outer gated region tuned to a lower filling factor. Such configuration allows toggling the spin and the orbital of the Landau level (LL) of the edge modes at the interface. We find that electron pairing occurs only when the two modes (the interfering outer and the first inner) belong to the same spinless LL.

The topological order of a quantum Hall state is mirrored by the gapless edge modes owing to bulk-edge correspondence. The state at the filling of ν = 5/2, predicted to host non-abelian anyons, supports a variety of edge modes (integer, fractional, neutral). To ensure thermal equilibration between the edge modes and thus accurately determine the state’s nature, it is advantageous to isolate the fractional channel (1/2 and neutral modes). In this study, we gapped out the integer modes by interfacing the ν = 5/2 state with integer states ν = 2 and ν = 3 and measured the thermal conductance of the isolated-interface channel. Our measured half-quantized thermal conductance confirms the non-abelian nature of the ν = 5/2 state and its particle-hole Pfaffian topological order. Such an isolated channel may be more amenable to braiding experiments.

Two-dimensional topological insulators, and in particular quantum Hall states, are characterized by an insulating bulk and a conducting edge. Fractional states may host both downstream (dictated by the magnetic field) and upstream propagating edge modes, which leads to complex transport behavior. Here, we combine two measurement techniques, local noise thermometry and thermal conductance, to study thermal properties of states with counter-propagating edge modes. We find that, while charge equilibration between counter-propagating edge modes is very fast, the equilibration of heat is extremely inefficient, leading to an almost ballistic heat transport over macroscopic distances. Moreover, we observe an emergent quantization of the heat conductance associated with a strong interaction fixed point of the edge modes. Such understanding of the thermal equilibration on edges with counter-propagating modes is a natural route towards extracting the topological order of the exotic 5/2 state.

According to the bulk-edge correspondence principle, the physics of the gapless edge in the quantum Hall effect determines the topological order in the gapped bulk. As the bulk is less accessible, the last two decades saw the emergence of several experimental techniques that invoke the study of the compressible edge. We review the properties of the edge, and describe several experimental techniques that include shot noise and thermal noise measurements, interferometry, and energy (thermal) transport at the edge. We pay special attention to the filling factor 5/2 in the first excited Landau level (in two-dimensional electron gas in GaAs), where experimental evidence of a non-Abelian topological order was found. A brief discussion is devoted to recent interferometry experiments that uncovered unexpected physics in the integer quantum Hall effect. The article also addresses the theory of edge states, for systems with Abelian and non-Abelian topological orders.

Topological edge-reconstruction occurs in hole-conjugate states of the fractional quantum Hall effect. The frequently studied filling factor, ν = 2/3, was originally proposed to harbor two counter-propagating modes: a downstream v = 1 and an upstream v = 1/3. However, charge equilibration between these two modes always led to an observed downstream v = 2/3 charge mode accompanied by an upstream neutral mode. Here, we present an approach to synthetize a v = 2/3 edge mode from its basic counter-propagating charged constituents, allowing a controlled equilibration between the two counter-propagating charge modes. This platform is based on a carefully designed double-quantum-well, which hosts two populated electronic sub-bands (lower and upper), with corresponding filling factors, v l and v u . By separating the 2D plane to two gated intersecting halves, each with different fillings, counter-propagating chiral modes can be formed along the intersection line. Equilibration between these modes can be controlled with the top gates’ voltage and the magnetic field.

A novel nonlocal supercurrent, carried by quartets, each consisting of four electrons, is expected to appear in a voltage-biased three-terminal Josephson junction. This supercurrent results from a nonlocal Andreev bound state (ABS), formed among three superconducting terminals. While in a two-terminal Josephson junction the usual ABS, and thus the dc Josephson current, exists only in equilibrium, the ABS, which gives rise to the quartet supercurrent, persists in the nonlinear regime. In this work, we report such resonance in a highly coherent three-terminal Josephson junction made in an InAs nanowire in proximity to an aluminum superconductor. In addition to nonlocal conductance measurements, cross-correlation measurements of current fluctuations provided a distinctive signature of the quartet supercurrent. Multiple device geometries had been tested, allowing us to rule out competing mechanisms and to establish the underlying microscopic origin of this coherent nondissipative current.

Topological states of matter are characterized by topological invariants, which are physical quantities whose values are quantized and do not depend on the details of the system (such as its shape, size and impurities). Of these quantities, the easiest to probe is the electrical Hall conductance, and fractional values (in units of e 2/h, where e is the electronic charge and h is the Planck constant) of this quantity attest to topologically ordered states, which carry quasiparticles with fractional charge and anyonic statistics. Another topological invariant is the thermal Hall conductance, which is harder to measure. For the quantized thermal Hall conductance, a fractional value in units of κ 0 (κ 0 = π 2k B 2/(3h), where k B is the Boltzmann constant) proves that the state of matter is non-Abelian. Such non-Abelian states lead to ground-state degeneracy and perform topological unitary transformations when braided, which can be useful for topological quantum computation. Here we report measurements of the thermal Hall conductance of several quantum Hall states in the first excited Landau level and find that the thermal Hall conductance of the 5/2 state is compatible with a half-integer value of 2.5κ 0, demonstrating its non-Abelian nature.

The quantum of thermal conductance of ballistic (collisionless) onedimensional channels is a unique fundamental constant1. Although the quantization of the electrical conductance of one-dimensional ballistic conductors has long been experimentally established2, demonstrating the quantization of thermal conductance has been challenging as it necessitated an accurate measurement of very small temperature increase. It has been accomplished for weakly interacting systems of phonons(3,4), photons(5) and electronic Fermi liquids(6-8); however, it should theoretically also hold in strongly interacting systems, such as those in which the fractional quantum Hall effect is observed. This effect describes the fractionalization of electrons into anyons and chargeless quasiparticles, which in some cases can be Majorana fermions(2). Because the bulk is incompressible in the fractional quantum Hall regime, it is not expected to contribute substantially to the thermal conductance, which is instead determined by chiral, one-dimensional edge modes. The thermal conductance thus reflects the topological properties of the fractional quantum Hall electronic system, to which measurements of the electrical conductance give no access(9-12). Here we report measurements of thermal conductance in particle-like (LaughlinJain series) states and the more complex (and less studied) hole-like states in a high-mobility two-dimensional electron gas in GaAsAlGaAs heterostructures. Hole-like states, which have fractional Landau-level fillings of 1/2 to 1, support downstream charged modes as well as upstream neutral modes(13), and are expected to have a thermal conductance that is determined by the net chirality of all of their downstream and upstream edge modes. Our results establish the universality of the quantization of thermal conductance for fractionally charged and neutral modes. Measurements of anyonic heat flow provide access to information that is not easily accessible from measurements of conductance

This Rapid Communication was motivated by the quest for observing interference of fractionally charged quasiparticles. Here, we study the behavior of an electronic Mach-Zehnder interferometer at the integer quantum Hall effect regime at filling factors greater than 1. Both the visibility and the velocity were measured and found to be highly correlated as a function of the filling factor. As the filling factor approached unity, the visibility quenched, not to recover for filling factors smaller than unity. Alternatively, the velocity saturated around a minimal value at the unity filling factor. We highlight the significant role interactions between the interfering edge and the bulk play as well as that of the defining potential at the edge. Shot-noise measurements suggest that phase averaging (due to phase randomization), rather than single-particle decoherence, is likely to be the cause of the dephasing in the fractional regime.

The quantum eraser is a device that illustrates the quantum principle of complementarity and shows how a dephased system can regain its lost quantum behavior by erasing the "which-path" information already obtained about it. Thus far, quantum erasers were constructed predominantly in optical systems. Here, we present a realization of a quantum eraser in a mesoscopic electronic device. The use of interacting electrons, instead of noninteracting photons, allows control over the extracted information and a smooth variation of the degree of quantum erasure. The demonstrated system can serve as a first step toward a variety of more complex setups.

This Letter was published online on 25 April 2014 without all the author’s corrections incorporated into the published article. The article has been corrected as of 29 April 2014. The text is correct in the printed version of the journal.

Upstream neutral modes, counter propagating to charge modes and carrying energy without net charge, had been predicted to exist in some of the fractional quantum Hall states and were recently observed via noise measurements. Understanding such modes will assist in identifying the wavefunction of these states, as well as shedding light on the role of Coulomb interactions within edge modes. Here, operating mainly in the v= 2/3 state, we place a quantum dot a few micrometres upstream of an ohmic contact, which serves as a 'neutral modes source'. We show that the neutral modes heat the input of the dot, causing a net thermo-electric current to flow through it. Heating of the electrons leads to a decay of the neutral mode, manifested in the vanishing of the thermo-electric current at T>110 mK. This set-up provides a straightforward method to investigate upstream neutral modes without turning to the more cumbersome noise measurements.

Entanglement is at the heart of the Einstein-Podolsky-Rosen paradox, where the non-locality is a necessary ingredient. Cooper pairs in superconductors can be split adiabatically, thus forming entangled electrons. Here, we fabricate such an electron splitter by contacting an aluminium superconductor strip at the centre of a suspended InAs nanowire. The nanowire is terminated at both ends with two normal metallic drains. Dividing each half of the nanowire by a gate-induced Coulomb blockaded quantum dot strongly impeds the flow of Cooper pairs due to the large charging energy, while still permitting passage of single electrons. We provide conclusive evidence of extremely high efficiency Cooper pair splitting via observing positive two-particle correlations of the conductance and the shot noise of the split electrons in the two opposite drains of the nanowire. Moreover, the actual charge of the injected quasiparticles is verified by shot noise measurements.

The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single- to two-subband occupancy. In 80 and 60 nm wells, the quantum Hall state at 5/2 filling of the lowest subband is observed even when the second subband is occupied. In a 50 nm well, the 5/2 state vanishes upon second subband population. We attribute this distinct behavior to the width dependence of the capacitive energy for intersubband charge transfer and of the overlap of the subband probability densities.

Charged excitations in the fractional quantum Hall effect are known to carry fractional charges, as theoretically predicted and experimentally verified. Here we report on the dependence of the tunneling quasiparticle charge, as determined via highly sensitive shot noise measurements, on the measurement conditions, in the odd denominators states nu = 1/3 and nu = 7/3, and in the even denominator state nu = 5/2. In particular, for very weak backscattering probability and sufficiently small excitation energies (temperature and applied voltage), tunneling charges across a constriction were found to be significantly higher than the theoretically predicted fundamental quasiparticle charges.

A density-tunable GaAs-AlGaAs heterostructure is used to study the density dependence of the filling factor nu=5/2 and other fractional and reentrant integer quantum-Hall states in the second Landau level. The activation energy at nu=5/2 can be determined for densities between 1.3 and 2.7 X 10(11)/cm(2) and reaches up to 310 mK. The 5/2 energy gap is calculated numerically, including finite width and Landau-level-mixing corrections, both as a function of electron density. The discrepancy between theory and experiment increases moderately with density and reaches about 1.5 K at the highest density. We argue that the activation energy is strongly influenced by disorder from ionized donors and attribute this to the surprisingly large size of the 5/2 quasiparticles. We find that the quasiparticles have a diameter of at least 12 times the magnetic length or 150 nm at a magnetic field of 4 T. Implications for heterostructure design are discussed.

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter (similar to 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.

We report on the phase measurements on a quantum dot containing a single electron in the Kondo regime. Transport takes place through a single orbital state. Although the conductance is far from the unitary limit, we measure directly, for the first time, a transmission phase as theoretically predicted of pi/2. As the dot's coupling to the leads is decreased, with the dot entering the Coulomb blockade regime, the phase reaches a value of pi. Temperature shows little effect on the phase behavior in the range 30-600 mK, even though both the two-terminal conductance and amplitude of the Aharonov-Bohm oscillations are strongly affected. These results also suggest that previous phase measurements involved transport through more than a single level.

The fractional quantum Hall effect, where plateaus in the Hall resistance at values of h/nu e(2) coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. ( Here h is Planck's constant, nu the filling factor and e the electron charge.) Current flows along the sample edges and is carried by charged excitations ( quasiparticles) whose charge is a fraction of the electron charge. Although earlier research concentrated on odd denominator fractional values of nu, the observation of the even denominator nu = 5/2 state sparked much interest. This state is conjectured to be characterized by quasiparticles of charge e/4, whose statistics are 'non- abelian' - in other words, interchanging two quasiparticles may modify the state of the system into a different one, rather than just adding a phase as is the case for fermions or bosons. As such, these quasiparticles may be useful for the construction of a topological quantum computer. Here we report data on shot noise generated by partitioning edge currents in the nu = 5/2 state, consistent with the charge of the quasiparticle being e/4, and inconsistent with other possible values, such as e/2 and e. Although this finding does not prove the non- abelian nature of the nu= 5/2 state, it is the first step towards a full understanding of these new fractional charges.

A consistent approach in forming the 0.7 structure by using a quantum dot rather than a quantum point contact is demonstrated. With this scheme, it was possible to tune on and off the 0.7 structure. The 0.7 structure continuously evolved into a normal integer conductance plateau by varying the tuning condition. Unlike the conventional 0.7 plateau, the new 0.7 structure was observed even at low electron temperatures down to 100 mK, with unprecedented flatness. From our results, it is concluded that electron interference should be taken into consideration to explain the 0.7 structure.

Resonant tunneling through two identical potential barriers renders them transparent, as particle trajectories interfere coherently. Here we realize resonant tunneling in a quantum dot (QD), and show that detection of electron trajectories renders the dot nearly insulating. Measurements were made in the integer quantum Hall regime, with the tunneling electrons in an inner edge channel coupled to detector electrons in a neighboring outer channel, which was partitioned. Quantitative analysis indicates that just a few detector electrons completely dephase the QD.

We report the unexpected bunching of Laughlin's quasiparticles, induced by an extremely weak backscattering potential at exceptionally low electron temperatures (T

We report on direct measurement of charge and its distribution in a Kondo correlated quantum dot (QD). A noninvasive potential-sensitive detector, in proximity with a QD, reveals that, although the conductance of the QD is significantly enhanced as it enters the Kondo regime, the average charge remains unaffected. This demonstrates the separation between spin and charge degrees of freedom. We find, however, under certain conditions, an abrupt redistribution of charge in the QD, taking place with an onset of Kondo correlation. This suggests a correlation between the spin and charge degrees of freedom.

The complex transmission amplitude of a quantum dot (QD) with Kondo correlation was measured near the unitary limit, The transmission phase was observed to evolve almost linearly over a range of about 1.5pi when the Fermi energy was scanned through a spin degenerate energy level of the QD. Surprisingly, the phase in the Coulomb Blockade regime, with one more electron entering the dot, was strongly affected by a preexistence of Kondo correlation. These results suggest that a full explanation of the Kondo effect may go beyond the framework of the Anderson model.

We measured the phase evolution of electrons as they traverse a quantum dot (QD) formed in a two-dimensional electron gas that serves as a Localized spin. The traversal phase, determined by embedding the QD in a double path electron interferometer and measuring the quantum interference of the electron wave functions manifested by conductance oscillation as a function of a weak magnetic field, evolved by pi radians, a range twice as Large as theoretically predicted. As the correlation weakened, a gradual transition to the familiar phase evolution of a QD was observed, The specific phase evolution observed is highly sensitive to the onset of Kondo correlation, possibly serving as an alternative fingerprint of the Kondo effect.

Wave-particle duality, as manifest in the two-slit experiment, provides perhaps the most vivid illustration of Bohr's complementarity principle: wave-like behaviour (interference) occurs only when the different possible paths a particle can take are indistinguishable, even in principle(1). The introduction of a which path (welcher Weg) detector for determining the actual path taken by the particle inevitably involved coupling the particle to a measuring environment, which in turn results in dephasing (suppression of interference). In other words, simultaneous observations of wave and particle behaviour is prohibited. Such a manifestation of the complementarity principle was demonstrated recently using a pair of correlated photons, with measurement of one photon being used to determine the path taken by the other and so prevent single-photon interference(2). Here we report the dephasing effects of a which-path detector on electrons traversing a double-path interferometer. We find that by varying the sensitivity of the detector we can affect the visibility of the oscillatory interference signal, thereby verifying the complementarity principle for fermions.

Since Millikan's famous oil-drop experiments(1), it has been web known that electrical charge is quantized in units of the charge of an electron, e. For this reason, the theoretical prediction(2,3) by Laughlin of the existence of fractionally charged 'quasiparticles'-proposed as an explanation for the fractional quantum Hall (FQH) effect-is very counterintuitive. The FQH effect is a phenomenon observed in the conduction properties of a two-dimensional electron gas subjected to a strong perpendicular ; magnetic field. This effect results from the strong interaction between electrons, brought about by the magnetic field, giving rise to the aforementioned fractionally charged quasiparticles which carry the current. Here we report the direct observation of these counterintuitive entities by using measurements of quantum shot noise. Quantum shot noise results from the discreteness of the current-carrying charges and so is proportional to both the charge of the quasiparticles and the average current. Our measurements of quantum shot noise show unambiguously that current in a two-dimensional electron gas in the FQH regime is carried by fractional charges-e/3 in the present case-in agreement with Laughlin's prediction.

Quasi-one-dimensional quantum wires have been formed in V-grooves on GaAs substrates. A new fabrication technique based on in situ thermal etching of masked substrates and subsequent overgrowth by molecular beam epitaxy has been developed. The device geometries enabled formation of low-resistance ohmic contacts. Two-terminal magnetoresistance measurements of single-wire devices show transport qualities previously not witnessed in growth on non-planar substrates. Illumination has been used to modulate the carrier density and lateral potential profile of the wires.

We study the effect of spatial correlation of ionized donors on the single-particle scattering time and on spin splitting in a two-dimensional electron gas (2DEG). As the correlation is being reduced we observe a reduction in the scattering time and a collapse of the spin-splitted peaks into a single peak. We find these electronic properties to be much more sensitive than the momentum relaxation time (or mobility) in high mobility 2DEG. We compare our results with Monte Carlo simulations and find them to be in partial agreement.

We measure the phase and magnitude of the reflection coefficient of a quantum dot (QD) in the integer quantum Hall regime. This was done by coupling the QD under study to a large QD, serving as an interferometer, and monitoring the phase of the magnetoconductance oscillations of the coupled system. As the Coulomb blockade resonances of the QD are scanned we find two distinct and qualitatively different behaviors of the phase. Our results agree for the most part with the theoretical predictions for resonant tunneling in a noninteracting system.

Previous determinations of Landau level lifetimes in GaAs/AlGaAs heterostructures from saturation cyclotron resonance measurements have been confused by heating effects. We have utilized a ps free electron laser to show that for samples with sheet concentration less than 3x10(11) cm(-2), true saturation of cyclotron resonance is observable at high magnetic fields, in the presence of polaron nonparabolicity. However, at higher concentrations, the polaron is screened and saturation is no longer possible. At low magnetic fields (i.e., long wavelengths) where the polaron nonparabolicity is negligible, saturation is not possible for any sheet density. It is confirmed that the lifetime of the first excited Landau level has an inverse dependence on carrier density. (C) 1995 American Institute of Physics.

Using selectivity doped GaAs-AlGaAs heterostructures we provide conclusive evidence that correlation among the DX(-)-d(+) charged donors strongly enhances the mobility of a two-dimensional electron gas (2DEG) residing 10 nm away from the charged donors. This is accomplished by changing the extent of correlation without affecting the total number of charged donors and density of electrons in the 2DEG. The experiments are used to prove that the DX donors are negatively charged in their ground state. A theory treating correlated DX(-)-d(+) charges can approximately account for these results.

The interaction between hot electrons, injected into a confined doped GaAs layer, and cold electrons residing in this layer is studied. Utilizing a hot-electron transistor, we found that the output current is larger than the input current, indicating that electron heating is taking place in the layer. Two possible pictures were considered, one assuming single-particle energy and momentum transfer from hot to cold electrons, and the other assuming that thermal equilibrium is reached among the heated cold electrons. By comparing different devices we conclude that the equilibrium picture describes better the heating process, with measured electron temperatures of 10-20 K. Using a power-balance criterion we estimate the energy relaxation time of the hot injected electrons.

The long hot-electron mean free path observed by Sivan, Heiblum, and Umbach in high-mobility 2D electron-gas heterostructures is explained by electron transport in the second subband. Our estimates show that the mean free path in the second subband is longer by 2 orders of magnitude than that in the first subband. New magnetic-focusing measurements reveal hot-electron velocities lower than the Fermi velocity, as expected for a higher-subband transport. The electrostatic potential near a biased constriction used as the hot-electron injector is shown to induce nonadiabatic intersubband transfer.

Current‐voltage characteristics of nGaAs‐iAlxGa1−xAs‐nGaAs heterojunction barriers grown on (100) substrates have been measured under uniaxial stress along 〈100〉 at 77 K. The results show that thermionic emission current through longitudinal X valleys becomes dominant over Fowler–Nordheim tunneling current through Γ or transverse X valleys, as stress increases. From the stress‐dependent thermionic emission current the rate of change with stress of the band‐edge energy difference between Γ in GaAs and longitudinal X in AlGaAs is deduced to be 14±2 meV/kbar, which leads to an X‐valley shear deformation potential of 9.6±1.8 eV.

Hot-electron transport in a 2D electron gas is investigated as a function of the electron’s excess energy. The inelastic mean free path at energies below the longitudinal-optical-phonon energy is found to be an order of magnitude longer than theoretical predictions. For higher injection energies, LO-phonon emission is found to be the main scattering mechanism. This, together with the ballistic motion for energies below the phonon energy, leads to previously unobserved periodic oscillations in the maximum energy of hot electrons as a function of their injection energy.

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In/sub 0.12/Ga/sub 0.88/As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Gamma -L valley separation in the strained In/sub 0.12/Ga/sub 0.88/As was estimated to be about 380 meV.

Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin‐layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low‐temperature (≂4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≂5×1011 cm−2—a factor of four improvement over the highest mobility reported for inverted interfaces.

Inverted heterointerfaces (GaAs on AlGaAs), which are basic constituents of all quantum wells and superlattices, have been significantly improved using electron diffraction and a refined molecular beam epitaxy growth procedure. Utilizing them in a novel structure allowed the variation of the electron density over a wide range, with peak mobilities of 4×105 cm2/V s. The continuously variable electron density allowed comparison to a theoretical analysis of the low‐temperature scattering mechanisms, and their relation to the growth process, establishing the importance of interface charges and roughness. High‐mobility samples were used to observe the quantum Hall effect with varying carrier concentrations in a single structure.

We have used reflection high‐energy electron diffraction (RHEED) to study the surface recovery of AlGaAs under different conditions. A modified process for growth interruptions was then introduced, where a GaAs monolayer was grown at each growth stop, and the arsenic flux was turned off during the low‐temperature phase of growth interruptions. Selectively doped inverted heterojunctions were grown using the modified growth interruptions together with low‐growth temperature (to avoid Si and impurity segregation). This combined process gave reproducible electron mobilities as high as 460 000 cm2/V s with sheet carrier concentration of 2×10_11 cm−2 at 4.2 K.

We describe experimental results obtained from microwave photoresistivity measurements in a low-electron-density modulation-doped GaAs-Al Ga& As heterojunction. We believe that such sensitive experiments can provide interesting information on the fractional quantum Hall effect.

Thin layers of Nb, 100–400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high‐energy electron diffraction, and after deposition by transmission electron microscopy and grazing‐incidence x‐ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40–400 °C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170 °C. Changing the substrate temperature from the optimum value of ∼170 °C in either direction resulted in a gradual deterioration of the epitaxy.

The construction and performance of electrostatic electron gun evaporators, placed in a molecular beam epitaxy system are described. Minimizing electron emittance led to an evaporation of refractory metals at a vacuum level of 2×10−10–2×10−9 Torr.

Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal‐GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.

We have studied the temperature dependence of the mobility of two‐dimensional electron gases formed at the interface of high‐quality GaAs‐GaAlAs heterostructures, focusing on the temperature range 4–40 K. The inverse mobility is shown to increase linearly with temperature, with a slope which increases with the electron density and is independent of the zero‐temperature mobility. The results are consistent with a theoretical model for the acoustic‐phonon mobility that includes screening, indicating that the temperature dependence in high mobility GaAs‐GaAlAs structures is dominated by phonons rather than ionized impurities. A good agreement between theory and experiment is found using a value of 13.5 eV for the deformation potential of GaAs.

Heavy Si doping of GaAs and AlGaAs grown by molecular beam epitaxy has been studied. By using a slow growth rate of 1000 Å/h, the electron concentration obtained for GaAs was 1.1×1019 cm−3, which is higher than the previously reported limit of 5×1018 cm−3. The accumulation of excess Si near the surfaces of GaAs and AlGaAs has been identified by secondary ion mass spectroscopy. A Si‐induced 3×2 surface structure has been observed, and the influence of arsenic to gallium flux ratio on the surface morphology is discussed. Photoluminescence spectra of the doped layers are presented.

We describe a new technique for controlled oxide growth using a directed low‐energy ion beam. The technique is evaluated by fabricating Ni‐oxide‐Ni and Cr‐oxide‐Ni tunneling junctions, using oxygen ion beams with energies ranging from 30 to 180 eV. High ion current densities are achieved at these low energies by replacing the conventional dual grid extraction system of the ion source with a single fine mesh grid. Junction resistance decreases with increasing ion energy, and oxidation time dependence shows a characteristic saturation, both consistent with a process of simultaneous oxidation and sputter etching, as in the rf oxidation process. In contrast with rf oxidized junctions, however, ion beam oxidized junctions contain less contamination by backsputtering, and the quantitative nature of ion beam techniques allows greater control over the growth process.