דצמבר 26, 1995 - דצמבר 26, 2028
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Date:28חמישיפברואר 2019
"DLTS defects characterization of process and irradiation induced defects in 4H-SiC”
More information| שעה | 11:00 - 12:00 |
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| מיקום | בניין פרלמן למדעי הכימיה |
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| מרצה | Prof. Mmantsae Diale
Dept. Of Physics, University of Pretoria |
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| צרו קשר | |
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| תקציר | Show full text abstract about 4H-SiC epitaxial layers were irradiated using various radioa...» 4H-SiC epitaxial layers were irradiated using various radioactive sources and particle accelerators. The electronic properties of induced defects were characterized by means of deep-level transient spectroscopy (DLTS) and Laplace DLTS. This presentation is a review of various observations due to processing various particles used in irradiation of 4H-SiC. From the results it was evident that the same defects were induced by various radiation sources. Irradiation induced the acceptor level of the Z1 center and the donor level of the Z2 center. The concentration of the native defects, which originate from impurities encountered in the growth process increased. DLTS spectra observed after irradiation were exhibited sitting on skewed baselines which in some instances inhibited accurate Laplace-DLTS resolution.
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