ינואר 09, 1996 - ינואר 09, 2029
-
Date:09שלישייולי 2019
Atomically controlled growth of functional, technologically important semiconductor systems
More information| שעה | 11:00 - 11:00 |
|---|
| מיקום | בניין פרלמן למדעי הכימיה |
|---|
| מרצה | Prof. Ana G Silva
Growth of GaN films with high quality interfaces to SiC wafers by atomically controlled co-deposition of Ga reacting with atomic N produced by microwave excitation of nitrogen gas is reported. All the steps and processes involved require very high temperatures (ca. 900 – 1000). To obtain atomic control and high-quality interfaces, depositions at very low deposition rates have been used. This talk is focused on surface and interface studies using high-resolution photoelectron spectroscopy with photon energies optimizing the surface sensitivity, and/or the photoelectric cross sections. Thus, maximum of information about as many aspects of the growth processes and structure of the systems, is provided at the new ASTRID II facility (high brilliance and stability). The growth processes are characterized in-situ by photoelectron core-level and valence band spectroscopy). |
|---|
| מארגן | |
|---|
| צרו קשר | |
|---|
